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HGTP3N60A4D

HGTP3N60A4D
Mfr. #:
HGTP3N60A4D
Fabricante:
ON Semiconductor
Descripción:
IGBT 600V 17A 70W TO220AB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGTP3N60A4D Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
HGTP3N60A4D DatasheetHGTP3N60A4D Datasheet (P4-P6)HGTP3N60A4D Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Tags
HGTP3N60A, HGTP3N, HGTP3, HGTP, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 17A 3-Pin (3+Tab) TO-220AB Rail
***nell
IGBT, N, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:17A; Voltage, Vce Sat Max:2.7V; Power Dissipation:70W; Case Style:TO-220AB; Termination Type:Through Hole; Alternate Case Style:TO-263; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:40A; No. of Pins:3; Power, Pd:70W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:47ns; Time, Fall Typ:47ns; Time, Rise:11ns; Transistors, No. of:1
***rchild Semiconductor
The HGTP3N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
Parte # Mfg. Descripción Valores Precio
HGTP3N60A4D
DISTI # V36:1790_06359439		ON SemiconductorPWR IGBT 7A,600V,SMPS SERIES N0
    HGTP3N60A4D
    DISTI # HGTP3N60A4D-ND    		ON SemiconductorIGBT 600V 17A 70W TO220AB
    RoHS: Compliant
    Min Qty: 800
    Container: Tube    		Limited Supply - Call
    • 800:$1.4088
    HGTP3N60A4D
    DISTI # HGTP3N60A4D    		ON SemiconductorTrans IGBT Chip N-CH 600V 17A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: HGTP3N60A4D)
    RoHS: Not Compliant
    Min Qty: 272
    Container: Bulk    		Americas - 0
    • 544:$1.0900
    • 816:$1.0900
    • 1360:$1.0900
    • 2720:$1.0900
    • 272:$1.1900
    HGTP3N60A4D
    DISTI # HGTP3N60A4D    		ON SemiconductorTrans IGBT Chip N-CH 600V 17A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: HGTP3N60A4D)
    RoHS: Compliant
    Min Qty: 400
    Container: Tube    		Americas - 0
      HGTP3N60A4D
      DISTI # 512-HGTP3N60A4D      		ON SemiconductorIGBT Transistors 600V N-Channel IGBT SMPS Series
      RoHS: Compliant      		0
        HGTP3N60A4DFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB
        RoHS: Compliant        		31194
        • 1000:$1.2100
        • 500:$1.2700
        • 100:$1.3300
        • 25:$1.3800
        • 1:$1.4900
        HGTP3N60A4DFairchild Semiconductor Corporation17 A, 600 V, N-CHANNEL IGBT, TO-220AB432
        • 346:$2.5831
        • 81:$2.8962
        • 1:$4.6965
        Imagen Parte # Descripción
        HGTP30N60C3D

        Mfr.#: HGTP30N60C3D

        OMO.#: OMO-HGTP30N60C3D-1190

        		 Nuevo y original
        HGTP3N60A4

        Mfr.#: HGTP3N60A4

        OMO.#: OMO-HGTP3N60A4-ON-SEMICONDUCTOR

        		 IGBT 600V 17A 70W TO220AB
        HGTP3N60A4 3N60A4

        Mfr.#: HGTP3N60A4 3N60A4

        OMO.#: OMO-HGTP3N60A4-3N60A4-1190

        		 Nuevo y original
        HGTP3N60A4-NL

        Mfr.#: HGTP3N60A4-NL

        OMO.#: OMO-HGTP3N60A4-NL-1190

        		 Nuevo y original
        HGTP3N60A4D

        Mfr.#: HGTP3N60A4D

        OMO.#: OMO-HGTP3N60A4D-ON-SEMICONDUCTOR

        		 IGBT 600V 17A 70W TO220AB
        HGTP3N60A4D9A

        Mfr.#: HGTP3N60A4D9A

        OMO.#: OMO-HGTP3N60A4D9A-1190

        		 Nuevo y original
        HGTP3N60B3

        Mfr.#: HGTP3N60B3

        OMO.#: OMO-HGTP3N60B3-1190

        		 Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-220AB
        HGTP3N60B3D

        Mfr.#: HGTP3N60B3D

        OMO.#: OMO-HGTP3N60B3D-1190

        		 Nuevo y original
        HGTP3N60C3

        Mfr.#: HGTP3N60C3

        OMO.#: OMO-HGTP3N60C3-1190

        		 Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220AB
        HGTP3N60C3D-07

        Mfr.#: HGTP3N60C3D-07

        OMO.#: OMO-HGTP3N60C3D-07-1190

        		 Nuevo y original
        Disponibilidad
        Valores:
        Available
        En orden:
        4000
        Ingrese la cantidad:
        El precio actual de HGTP3N60A4D es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        1,64 US$
        1,64 US$
        10
        1,55 US$
        15,53 US$
        100
        1,47 US$
        147,15 US$
        500
        1,39 US$
        694,90 US$
        1000
        1,31 US$
        1 308,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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