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BSC014N04LSIATMA1

BSC014N04LSIATMA1
Mfr. #:
BSC014N04LSIATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 40V 100A TDSON-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC014N04LSIATMA1 Ficha de datos
Entrega:
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Más información:
BSC014N04LSIATMA1 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
OptiMOS
embalaje
Carrete
Alias ​​de parte
BSC014N04LSI SP000953212
Estilo de montaje
SMD / SMT
Nombre comercial
OptiMOS
Paquete-Estuche
TDSON-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Fuente triple de drenaje cuádruple simple
Tipo transistor
1 N-Channel
Disipación de potencia Pd
96 W
Id-corriente-de-drenaje-continua
100 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Resistencia a la fuente de desagüe de Rds
1.45 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
55 nC
Tags
BSC014N04, BSC014N0, BSC014, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R
***ical
Power-MOSFET, 40V
***ineon
New 40V and 60V product families, feature not only the industrys lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. | Summary of Features: Optimized for synchronous rectification; 15% lower R DS(on) than alternative devices; 31% improvement of FOM over similar devices; Integrated Schottky-like diode; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
40V OptiMOS™ Power MOSFETs
Infineon's 40V OptiMOS Power MOSFETs feature 35% lower RDS(on) and 45% lower Figure of Merit (RDS(on) x Qg) compared to alternative devices. These devices are optimized for synchronous rectification in switched mode power supplies (SMPS) as well as a broad range of industrial applications such as motor control, solar micro inverters and fast switching DC/DC converters. In addition, this new generation of 40V devices offers higher switching frequencies and are enabled which results in even higher power density.  A monolithic integrated Schottky-like diode in the 40V SuperSO8 package (5mm x 6mm) leads to higher efficiency and a drastic reduction of the voltage overshoot. This in turn reduces the need for a snubber circuit and saves engineering effort and cost.Learn More
Parte # Mfg. Descripción Valores Precio
BSC014N04LSIATMA1
DISTI # BSC014N04LSIATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 40V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		20577In Stock
  • 1000:$1.6722
  • 500:$1.9813
  • 100:$2.4966
  • 10:$3.0630
  • 1:$3.3700
BSC014N04LSIATMA1
DISTI # BSC014N04LSIATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 40V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		20577In Stock
  • 1000:$1.6722
  • 500:$1.9813
  • 100:$2.4966
  • 10:$3.0630
  • 1:$3.3700
BSC014N04LSIATMA1
DISTI # BSC014N04LSIATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 40V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		20000In Stock
  • 5000:$1.4734
BSC014N04LSIATMA1
DISTI # BSC014N04LSIATMA1		Infineon Technologies AGTrans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R - Tape and Reel (Alt: BSC014N04LSIATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$1.2900
  • 10000:$1.1900
  • 20000:$1.1900
  • 30000:$1.0900
  • 50000:$1.0900
BSC014N04LSIATMA1
DISTI # SP000953212		Infineon Technologies AGTrans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R (Alt: SP000953212)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€1.9139
  • 10000:€1.4899
  • 20000:€1.2389
  • 30000:€1.1559
  • 50000:€1.0989
BSC014N04LSIATMA1
DISTI # 50Y1798		Infineon Technologies AGMOSFET, N-CH, 40V, 100A, 150DEG C, 96W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 1000:$1.7500
  • 500:$2.0900
  • 250:$2.2100
  • 100:$2.3400
  • 50:$2.5200
  • 25:$2.7000
  • 10:$2.8900
  • 1:$3.3600
BSC014N04LSI
DISTI # 726-BSC014N04LSI		Infineon Technologies AGMOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
RoHS: Compliant		18687
  • 1:$2.6800
  • 10:$2.2800
  • 100:$1.8200
  • 500:$1.6000
  • 1000:$1.3200
BSC014N04LSIATMA1
DISTI # 726-BSC014N04LSIATMA		Infineon Technologies AGMOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
RoHS: Compliant		110
  • 1:$2.6800
  • 10:$2.2800
  • 100:$1.8200
  • 500:$1.6000
  • 1000:$1.3200
BSC014N04LSIATMA1
DISTI # 2480707		Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON-8
RoHS: Compliant		0
  • 500:£1.2400
  • 250:£1.3300
  • 100:£1.4200
  • 10:£1.7700
  • 1:£2.3600
BSC014N04LSIATMA1
DISTI # 2480707		Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON-8
RoHS: Compliant		0
  • 1000:$2.0900
  • 5000:$2.0900
  • 500:$2.5400
  • 100:$2.8800
  • 10:$3.6200
  • 1:$4.2500
BSC014N04LSIATMA1
DISTI # 2480707RL		Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON-8
RoHS: Compliant		0
  • 1000:$2.0900
  • 5000:$2.0900
  • 500:$2.5400
  • 100:$2.8800
  • 10:$3.6200
  • 1:$4.2500
Imagen Parte # Descripción
BSC014N04LSATMA1

Mfr.#: BSC014N04LSATMA1

OMO.#: OMO-BSC014N04LSATMA1

 MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
BSC014N06NSATMA1

Mfr.#: BSC014N06NSATMA1

OMO.#: OMO-BSC014N06NSATMA1

 MOSFET N-Ch 60V 100A TDSON-8 OptiMOS
BSC014N03MS G

Mfr.#: BSC014N03MS G

OMO.#: OMO-BSC014N03MS-G

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BSC014N03MSGATMA1

Mfr.#: BSC014N03MSGATMA1

OMO.#: OMO-BSC014N03MSGATMA1

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BSC014N03LS G

Mfr.#: BSC014N03LS G

OMO.#: OMO-BSC014N03LS-G-1190

 Trans MOSFET N-CH 30V 34A 8-Pin TDSON EP
BSC014N03MSGATMA1

Mfr.#: BSC014N03MSGATMA1

OMO.#: OMO-BSC014N03MSGATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 100A TDSON-8
BSC014N04LSI

Mfr.#: BSC014N04LSI

OMO.#: OMO-BSC014N04LSI-1190

 Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP
BSC014N06NSATMA1

Mfr.#: BSC014N06NSATMA1

OMO.#: OMO-BSC014N06NSATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 30A TDSON-8
BSC014N06NSTATMA1

Mfr.#: BSC014N06NSTATMA1

OMO.#: OMO-BSC014N06NSTATMA1-INFINEON-TECHNOLOGIES

 DIFFERENTIATED MOSFETS
BSC014N04LSIATMA1

Mfr.#: BSC014N04LSIATMA1

OMO.#: OMO-BSC014N04LSIATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 40V 100A TDSON-8
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de BSC014N04LSIATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,64 US$
1,64 US$
10
1,55 US$
15,53 US$
100
1,47 US$
147,15 US$
500
1,39 US$
694,90 US$
1000
1,31 US$
1 308,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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