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CSD19535KTTT

CSD19535KTTT
Mfr. #:
CSD19535KTTT
Descripción:
MOSFET 100V N-Channel NexFET Power MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CSD19535KTTT Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
CSD19535KTTT más información CSD19535KTTT Product Details
Atributo del producto
Valor de atributo
Fabricante:
Instrumentos Texas
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
200 A
Rds On - Resistencia de la fuente de drenaje:
3.4 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
75 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
300 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
NexFET
Embalaje:
Carrete
Altura:
19.7 mm
Longitud:
9.25 mm
Serie:
CSD19535KTT
Tipo de transistor:
1 N-Channel
Ancho:
10.26 mm
Marca:
Instrumentos Texas
Transconductancia directa - Mín .:
301 S
Otoño:
15 ns
Sensible a la humedad:
Yes
Tipo de producto:
MOSFET
Hora de levantarse:
18 ns
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
21 ns
Tiempo típico de retardo de encendido:
9 ns
Unidad de peso:
0.068643 oz
Tags
CSD19535, CSD1953, CSD19, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
100-V, N channel NexFET™ power MOSFET, single D2PAK, 3.4 mOhm 3-DDPAK/TO-263 -55 to 175
***ical
Trans MOSFET N-CH Si 100V 200A 4-Pin(3+Tab) DDPAK T/R
***ark
Mosfet, N-Ch, 100V, 200A, To-263Aa-3
***S
French Electronic Distributor since 1988
*** Stop Electro
Power Field-Effect Transistor, 200A I(D), 100V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ure Electronics
FDB035N10 Series 100 V 214 A 3.5 mOhm N-Channel SuperFET® MOSFET - D2PAK-3
***Yang
Trans MOSFET N-CH 100V 214A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***emi
N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ
***ment14 APAC
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:214A; Source Voltage Vds:100V; On Resistance
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 214A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ical
Trans MOSFET N-CH 75V 260A Automotive 7-Pin(6+Tab) D2PAK T/R
***ernational Rectifier
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package
***el Electronic
Power Field-Effect Transistor, 240A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7
*** Source Electronics
Trans MOSFET N-CH Si 100V 190A Automotive 7-Pin(6+Tab) D2PAK T/R / HEXFETPower MOSFET
***ernational Rectifier
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package
***el Electronic
Power Field-Effect Transistor, 190A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7
***(Formerly Allied Electronics)
IRFS3107PBF N-channel MOSFET Transistor; 230 A; 75 V; 3-Pin D2PAK
***roFlash
Single N-Channel 75 V 3 mOhm 160 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH Si 75V 230A 3-Pin(2+Tab) D2PAK Tube
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 370 W
***nell
MOSFET, N-CH, 75V, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 230A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.35V; Power D
***ure Electronics
N-Channel 75 V 3.1 mOhm Surface Mount PowerTrench® Mosfet - D2PAK-3
***emi
N-Channel PowerTrench® MOSFET 75V, 235A, 3.1mΩ
***Yang
Trans MOSFET N-CH 75V 235A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ment14 APAC
MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:235A; Source Voltage Vds:75V; On Resistance
***r Electronics
Power Field-Effect Transistor, 120A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 235A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***p One Stop Global
Trans MOSFET N-CH 80V 229A 7-Pin(6+Tab) D2PAK T/R
***ure Electronics
Single N-Channel 80 V 246 W 178 nC PowerTrench Surface Mount Mosfet - TO-263-7
***emi
N-Channel PowerTrench® MOSFET 80V, 229A, 2.4mΩ
***r Electronics
Power Field-Effect Transistor, 120A I(D), 80V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***el Electronic
Chip Resistor - Surface Mount 16Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 16 OHM 1% 1/10W 0402
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***XS
This 100-V, 2.8 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
***
™
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Parte # Descripción Valores Precio
CSD19535KTTT
DISTI # 296-41135-1-ND		MOSFET N-CH 100V 200A TO263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1273In Stock
  • 10:$3.5890
  • 1:$4.0200
CSD19535KTTT
DISTI # 296-41135-6-ND		MOSFET N-CH 100V 200A TO263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1273In Stock
  • 10:$3.5890
  • 1:$4.0200
CSD19535KTTT
DISTI # 296-41135-2-ND		MOSFET N-CH 100V 200A TO263
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		1250In Stock
  • 250:$2.5784
  • 100:$2.8571
  • 50:$3.1358
CSD19535KTTT
DISTI # CSD19535KTTT		Trans MOSFET N-CH 100V 200A 3-Pin TO-263 T/R - Tape and Reel (Alt: CSD19535KTTT)
RoHS: Compliant
Min Qty: 200
Container: Reel		Americas - 0
  • 200:$1.7900
  • 300:$1.6900
  • 500:$1.5900
  • 1000:$1.5900
  • 2000:$1.4900
CSD19535KTTTCSD19535KTT 100 V N-Channel NexFET&#153,Power MOSFET1000
  • 1000:$1.4400
  • 750:$1.5100
  • 500:$1.7900
  • 250:$2.1000
  • 100:$2.2400
  • 25:$2.5600
  • 10:$2.7500
  • 1:$3.0500
CSD19535KTTT
DISTI # 595-CSD19535KTTT		MOSFET 100V N-Channel NexFET Power MOSFET
RoHS: Compliant		561
  • 1:$3.3500
  • 10:$3.0200
  • 50:$3.0200
  • 100:$2.4700
  • 250:$2.3100
  • 500:$2.1000
CSD19535KTT
DISTI # 595-CSD19535KTT		MOSFET CSD19535KTT 100 V N-Channel NexFET Power MOSFET 3-DDPAK/TO-263
RoHS: Compliant		88
  • 1:$3.0200
  • 10:$2.7100
  • 100:$2.2200
  • 250:$2.0800
  • 500:$1.8900
CSD19535KTTT
DISTI # 9009885P		NEXFET N-CHANNEL MOSFET 100V 140A D2PAK, RL230
  • 10:£2.2000
  • 26:£2.1150
  • 50:£2.0300
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Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de CSD19535KTTT es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
3,70 US$
3,70 US$
10
3,32 US$
33,20 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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