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PMZB370UNE,315

PMZB370UNE,315
Mfr. #:
PMZB370UNE,315
Fabricante:
Nexperia
Descripción:
MOSFET N-Chan 30V 900mA
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
PMZB370UNE,315 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Nexperia
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
DFN-1006B-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
900 mA
Rds On - Resistencia de la fuente de drenaje:
490 mOhms
Vgs - Voltaje puerta-fuente:
8 V
Pd - Disipación de energía:
715 mW
Configuración:
Único
Embalaje:
Carrete
Tipo de transistor:
1 N-Channel
Marca:
Nexperia
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
10000
Subcategoría:
MOSFET
Tags
PMZB37, PMZB3, PMZB, PMZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***peria
PMZB370UNE - 30 V, single N-channel Trench MOSFET
***ure Electronics
Single N-Channel 30 V 360 mW 1.16 nC Silicon Surface Mount Mosfet - SOT-883
***ical
Trans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R
***i-Key
MOSFET N-CH 30V 900MA DFN1006B-3
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:900Ma; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.37Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:770Mv; Power Dissipation Pd:360Mw; No. Of Pins:3Pins Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 0.9A, SOT-883B-3; Transistor Polarity:N Channel; Continuous Drain Current Id:900mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.37ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:770mV; Power Dissipation Pd:360mW; Transistor Case Style:SOT-883B; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, N-CH, 30V, 0.9A, SOT-883B-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:900mA; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.37ohm; Tensione Vgs di Misura Rds(on):4.5V; Tensione di Soglia Vgs:770mV; Dissipazione di Potenza Pd:360mW; Modello Case Transistor:SOT-883B; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Parte # Mfg. Descripción Valores Precio
PMZB370UNE,315
DISTI # 1727-1379-1-ND		NexperiaMOSFET N-CH 30V 0.9A DFN1006B-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6382In Stock
  • 1000:$0.1642
  • 500:$0.2129
  • 100:$0.3020
  • 10:$0.4310
  • 1:$0.5500
PMZB370UNE,315
DISTI # 1727-1379-6-ND		NexperiaMOSFET N-CH 30V 0.9A DFN1006B-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6382In Stock
  • 1000:$0.1642
  • 500:$0.2129
  • 100:$0.3020
  • 10:$0.4310
  • 1:$0.5500
PMZB370UNE,315
DISTI # 1727-1379-2-ND		NexperiaMOSFET N-CH 30V 0.9A DFN1006B-3
RoHS: Compliant
Min Qty: 10000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 10000:$0.1319
PMZB370UNE,315
DISTI # PMZB370UNE,315		NexperiaTrans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R - Tape and Reel (Alt: PMZB370UNE,315)
RoHS: Compliant
Min Qty: 10000
Container: Reel		Americas - 280000
  • 10000:$0.0969
  • 20000:$0.0949
  • 40000:$0.0919
  • 60000:$0.0899
  • 100000:$0.0879
PMZB370UNE,315
DISTI # PMZB370UNE315		NexperiaTrans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R - Bulk (Alt: PMZB370UNE315)
RoHS: Compliant
Min Qty: 6250
Container: Bulk		Americas - 0
  • 6250:$0.1049
  • 6252:$0.1029
  • 12502:$0.1009
  • 31250:$0.0979
  • 62500:$0.0959
PMZB370UNE,315
DISTI # 771-PMZB370UNE315		NexperiaMOSFET N-Chan 30V 900mA
RoHS: Compliant		0
  • 10000:$0.1040
  • 20000:$0.0960
  • 50000:$0.0920
PMZB370UNE315NXP SemiconductorsNow Nexperia PMZB370UNE - Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, XQFN3
RoHS: Not Compliant		31500
  • 1000:$0.0900
  • 100:$0.1000
  • 500:$0.1000
  • 1:$0.1100
  • 25:$0.1100
PMZB370UNE315NexperiaNow Nexperia PMZB370UNE - Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, XQFN3
RoHS: Not Compliant		660000
  • 1000:$0.0900
  • 100:$0.1000
  • 500:$0.1000
  • 1:$0.1100
  • 25:$0.1100
PMZB370UNE,315
DISTI # 2498602		NexperiaMOSFET, N-CH, 30V, 0.9A, SOT-883B-3
RoHS: Compliant		0
  • 500:£0.1480
  • 250:£0.1820
  • 100:£0.2160
  • 25:£0.3370
  • 5:£0.3560
Imagen Parte # Descripción
PMZB370UNE,315

Mfr.#: PMZB370UNE,315

OMO.#: OMO-PMZB370UNE-315

 MOSFET N-Chan 30V 900mA
PMZB370UNE315

Mfr.#: PMZB370UNE315

OMO.#: OMO-PMZB370UNE315-1190

 Now Nexperia PMZB370UNE - Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, XQFN3
PMZB370UNE

Mfr.#: PMZB370UNE

OMO.#: OMO-PMZB370UNE-1190

 SMALL SIGNAL FIELD-EFFECT TRANSISTOR
PMZB370UNE,315

Mfr.#: PMZB370UNE,315

OMO.#: OMO-PMZB370UNE-315-NEXPERIA

 MOSFET N-CH 30V 0.9A DFN1006B-3
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de PMZB370UNE,315 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,42 US$
0,42 US$
10
0,32 US$
3,17 US$
100
0,17 US$
17,20 US$
1000
0,13 US$
129,00 US$
2500
0,11 US$
277,50 US$
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