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VN3205N3-G-P002

VN3205N3-G-P002
Mfr. #:
VN3205N3-G-P002
Fabricante:
Microchip Technology
Descripción:
MOSFET N-CH Enhancmnt Mode MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
VN3205N3-G-P002 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
VN3205N3-G-P002 más información VN3205N3-G-P002 Product Details
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-92-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
50 V
Id - Corriente de drenaje continua:
1.2 A
Rds On - Resistencia de la fuente de drenaje:
450 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
5.33 mm
Longitud:
5.21 mm
Producto:
Pequeña señal MOSFET
Tipo de transistor:
1 N-Channel
Ancho:
4.19 mm
Marca:
Tecnología de microchip
Otoño:
25 ns
Tipo de producto:
MOSFET
Hora de levantarse:
15 ns
Cantidad de paquete de fábrica:
2000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
25 ns
Tiempo típico de retardo de encendido:
10 ns
Unidad de peso:
0.016000 oz
Tags
VN3205N3-G, VN3205N3, VN3205N, VN3205, VN320, VN32, VN3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 50V, 0.3 OHM 3 TO-92 RVT/R ROHS COMPLIANT: YES
***et
Trans MOSFET N-CH 50V 1.2A 3-Pin TO-92 T/R
*** Stop Electro
Small Signal Field-Effect Transistor, 1.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***ure Electronics
N-Channel 60 V 0.33 Ohm Enhancement Mode Vertical DMOS FET-TO-92
***ponent Sense
Trans MOSFET N-CH 60V 1.1A Automotive 3-Pin E-Line
***ark
Mosfet Bvdss: 41V~60V Ep3sc Bulk 4K Rohs Compliant: Yes
***(Formerly Allied Electronics)
MOSFET N-Channel 60V 1.1A E-Line
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***ment14 APAC
MOSFET, N, LOGIC, E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:850mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.1A; Current Temperature:25°C; Device Marking:ZVN4306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:850mW; Power Dissipation Pd:850mW; Power Dissipation Ptot Max:850mW; Pulse Current Idm:20A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
N-Channel 60 V 0.33 Ohm Through Hole Enhancement Mode DMOS FET - TO-92
***ical
Trans MOSFET N-CH 60V 1.1A Automotive 3-Pin E-Line
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.1A; On Resistance Rds(On):0.33Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; No. Of Pins:3Pinsrohs Compliant: No
***(Formerly Allied Electronics)
MOSFET P-ch 50V 0.175A 10R 0.625W E-Line
***ark
P CHANNEL MOSFET, -50V, 175mA TO-92; Transistor Polarity:P Channel; Continuous Drain Current, Id:170mA; Drain Source Voltage, Vds:-50V; On Resistance, Rds(on):10ohm; Rds(on) Test Voltage, Vgs:-5V; Threshold Voltage, Vgs Typ:-2V ;RoHS Compliant: Yes
***nell
MOSFET, P E-LINE; Transistor Polarity: P Channel; Continuous Drain Current Id: 170mA; Drain Source Voltage Vds: -50V; On Resistance Rds(on): 10ohm; Rds(on) Test Voltage Vgs: -5V; Threshold Voltage Vgs: -800mV; Power Dissipation Pd: 625mW; Transistor Case Style: E-Line; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Spacing: 1.27mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 625mW; Pulse Current Idm: 500mA
***p One Stop Global
Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 T/R
***el Electronic
Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 500 mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
***et Europe
Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
***r Electronics
Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
***p One Stop Global
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
***el Electronic
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Parte # Mfg. Descripción Valores Precio
VN3205N3-G-P002
DISTI # VN3205N3-G-P002-ND		Microchip Technology IncMOSFET N-CH 50V 1.2A TO92-3
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$1.0300
VN3205N3-G-P002
DISTI # VN3205N3-G-P002		Microchip Technology IncTrans MOSFET N-CH 50V 1.2A 3-Pin TO-92 T/R - Tape and Reel (Alt: VN3205N3-G-P002)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 2000:$0.7099
  • 4000:$0.6859
  • 8000:$0.6639
  • 12000:$0.6439
  • 20000:$0.6339
VN3205N3-G-P002
DISTI # 53Y4339		Microchip Technology IncMOSFET, N-CHANNEL ENHANCEMENT-MODE, 50V, 0.3 Ohm3 TO-92 RVT/R0
  • 1:$1.3600
  • 25:$1.1300
  • 100:$1.0300
VN3205N3-G-P002
DISTI # 70483897		Microchip Technology IncMOSFET,N-CHANNEL ENHANCEMENT-MODE,50V,0.3 Ohm3 TO-92RVT/R
RoHS: Compliant		0
  • 2000:$0.9800
VN3205N3-G-P002
DISTI # VN3205N3-G-P002		Microchip Technology IncMOSFETN-CHANNEL ENHANCEMENT-MODE50V0.3 Ohm
RoHS: Compliant		10000
  • 1000:$0.8300
  • 100:$1.0000
  • 26:$1.1000
  • 1:$1.3200
VN3205N3-G-P002
DISTI # 689-VN3205N3-G-P002		Microchip Technology IncMOSFET N-CH Enhancmnt Mode MOSFET
RoHS: Compliant		676
  • 1:$1.3600
  • 10:$1.3400
  • 25:$1.1400
  • 100:$1.0300
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 Nuevo y original
Disponibilidad
Valores:
546
En orden:
2529
Ingrese la cantidad:
El precio actual de VN3205N3-G-P002 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,35 US$
1,35 US$
10
1,33 US$
13,30 US$
25
1,13 US$
28,25 US$
100
1,03 US$
103,00 US$
250
0,90 US$
226,25 US$
500
0,77 US$
386,00 US$
1000
0,70 US$
703,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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