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IXFN240N15T2

IXFN240N15T2
Mfr. #:
IXFN240N15T2
Fabricante:
Littelfuse
Descripción:
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFN240N15T2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN240N15T2 DatasheetIXFN240N15T2 Datasheet (P4-P6)
ECAD Model:
Más información:
IXFN240N15T2 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
Montaje en chasis
Paquete / Caja:
SOT-227-4
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
150 V
Id - Corriente de drenaje continua:
240 A
Rds On - Resistencia de la fuente de drenaje:
5.2 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
460 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
830 W
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Serie:
IXFN240N15
Escribe:
GigaMOS Trench T2 HiperFet
Marca:
IXYS
Transconductancia directa - Mín .:
125 S
Otoño:
145 ns
Tipo de producto:
MOSFET
Hora de levantarse:
125 ns
Cantidad de paquete de fábrica:
10
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
77 ns
Tiempo típico de retardo de encendido:
48 ns
Unidad de peso:
1.058219 oz
Tags
IXFN24, IXFN2, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 150 V 240 A 5.2 mO Surface Mount Power Mosfet - SOT 227
***i-Key
MOSFET N-CH 150V 240A SOT227B
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
Parte # Mfg. Descripción Valores Precio
IXFN240N15T2
DISTI # IXFN240N15T2-ND		IXYS CorporationMOSFET N-CH 150V 240A SOT227
RoHS: Compliant
Min Qty: 10
Container: Tube		Temporarily Out of Stock
  • 10:$27.7500
IXFN240N15T2
DISTI # 747-IXFN240N15T2		IXYS CorporationMOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant		0
  • 200:$21.7500
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Mfr.#: IXFN240N15T2

OMO.#: OMO-IXFN240N15T2-IXYS-CORPORATION

 MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de IXFN240N15T2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
10
27,75 US$
277,50 US$
30
25,50 US$
765,00 US$
50
24,42 US$
1 221,00 US$
100
23,70 US$
2 370,00 US$
200
21,75 US$
4 350,00 US$
500
20,70 US$
10 350,00 US$
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