STU2N105K5

STU2N105K5
Mfr. #:
STU2N105K5
Fabricante:
STMicroelectronics
Descripción:
MOSFET N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in IPAK package
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STU2N105K5 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STU2N105K5 más información STU2N105K5 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-251-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
1.05 kV
Id - Corriente de drenaje continua:
1.5 A
Rds On - Resistencia de la fuente de drenaje:
8 Ohms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
10 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
60 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
MDmesh
Embalaje:
Tubo
Serie:
STU2N105K5
Marca:
STMicroelectronics
Otoño:
38.5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
8.5 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
35 ns
Tiempo típico de retardo de encendido:
14.5 ns
Unidad de peso:
0.139332 oz
Tags
STU2N, STU2, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in IPAK package
***r Electronics
Power Field-Effect Transistor, 1.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 1.05KV 1.5A 3-Pin(3+Tab) IPAK Tube
***ure Electronics
N-Channel 1050V 1.5A (Tc) 60W (Tc) Through Hole IPAK (TO-251)
***ronik
N-CH 1050V 1,5A 8000mOhm TO251
***icroelectronics SCT
Power MOSFETs, 1050V, 1.5A, IPAK, Tube
***el Electronic
IC AMP AUDIO PWR 3.1W MONO 8SON
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK
***r Electronics
Power Field-Effect Transistor, 1.7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ark
MOSFET, N-CH, 900V, 1.7A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK
***r Electronics
Power Field-Effect Transistor, 1.7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ark
MOSFET, N-CH, 900V, 1.7A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***i-Key
MOSFET N-CH 900V 1.7A IPAK
***Yang
MOSFET 900V N-Channel QFET - Bulk
***-Wing Technology
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***i-Key
MOSFET N-CH 800V 1.8A IPAK
***ser
MOSFETs 800V N-Channel QFET
***Yang
N-CH/800V/1.8A/6.3OHM - Bulk
***emi
Power MOSFET, N-Channel, QFET®, 1000 V, 1.6 A, 9 Ω, IPAK
***ure Electronics
FQU2N100 Series N-Channel 1000 V 9 Ohms Mosfet - TO-220
***nell
MOSFET, N-CH, 1KV, 1.6A, 150DEG C, 50W; Available until stocks are exhausted
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***icroelectronics
N-channel 1000 V, 6.25 Ohm typ., 1.85 A, Zener-protected SuperMESH Power MOSFET in IPAK package
***SIT Distribution GmbH
Power Field-Effect Transistor, 1.85A I(D), 1000V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N CH, 1000V, 1.85A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.85A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):6.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:70W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
MDmesh K5 Power MOSFETs
STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best RDS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies and welding. The K5 series are available at 800V, 850V, 900V, 950V, 1050V, 1200V and 1500V.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Parte # Mfg. Descripción Valores Precio
STU2N105K5
DISTI # 30608508
STMicroelectronicsTrans MOSFET N-CH 1.05KV 1.5A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
50
  • 50:$1.0557
  • 24:$1.0684
STU2N105K5
DISTI # 497-15282-5-ND
STMicroelectronicsMOSFET N-CH 1050V 1.5A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube
Temporarily Out of Stock
    STU2N105K5
    DISTI # C1S730200997856
    STMicroelectronicsMOSFETs50
    • 50:$0.8280
    • 1:$0.8380
    STU2N105K5
    DISTI # STU2N105K5
    STMicroelectronicsTrans MOSFET N-CH 1050V 1.5A 3-Pin IPAK Tube (Alt: STU2N105K5)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 3000
    • 1:€1.5679
    • 10:€1.3289
    • 25:€1.3259
    • 50:€1.3229
    • 100:€1.0579
    • 500:€0.9319
    • 1000:€0.7689
    STU2N105K5
    DISTI # STU2N105K5
    STMicroelectronicsTrans MOSFET N-CH 1050V 1.5A 3-Pin IPAK Tube - Rail/Tube (Alt: STU2N105K5)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tube
    Americas - 0
    • 3000:$0.9289
    • 6000:$0.8849
    • 12000:$0.8449
    • 18000:$0.8079
    • 30000:$0.7909
    STU2N105K5
    DISTI # 511-STU2N105K5
    STMicroelectronicsMOSFET N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in IPAK package
    RoHS: Compliant
    0
    • 1:$1.8300
    • 10:$1.5500
    • 100:$1.2400
    • 500:$1.0900
    • 1000:$0.8990
    • 3000:$0.8380
    • 6000:$0.8070
    • 9000:$0.7750
    STU2N105K5
    DISTI # TMOSP12840
    STMicroelectronicsN-CH 1050V 1,5A 8000mOhm TO251Stock DE - 0Stock HK - 0Stock US - 0
    • 3000:$1.0492
    STU2N105K5STMicroelectronics 3167
      STU2N105K5
      DISTI # XSKDRABV0028410
      STMicroelectronicsPower Field-Effect Transistor
      RoHS: Compliant
      2400 in Stock0 on Order
      • 2400:$1.1600
      • 600:$1.2400
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      OMO.#: OMO-UCC21225ANPLT

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      Mfr.#: SMBJ220A

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      TVS Diodes / ESD Suppressors 600W 220V 5% Uni-Directional
      STRVS185X02B

      Mfr.#: STRVS185X02B

      OMO.#: OMO-STRVS185X02B

      TVS Diodes / ESD Suppressors Rep Volt Suppressor TVS 185V Ipp 2A
      STRVS280X02F

      Mfr.#: STRVS280X02F

      OMO.#: OMO-STRVS280X02F

      TVS Diodes / ESD Suppressors Rep Volt Suppressor TVS 280V Ipp 2A
      STD2N105K5

      Mfr.#: STD2N105K5

      OMO.#: OMO-STD2N105K5

      MOSFET N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in DPAK package
      STF5N105K5

      Mfr.#: STF5N105K5

      OMO.#: OMO-STF5N105K5

      MOSFET N-channel 1050 V, 2.9 Ohm typ., 3 A MDmesh K5 Power MOSFET in TO-220FP package
      LM5021MM-1/NOPB

      Mfr.#: LM5021MM-1/NOPB

      OMO.#: OMO-LM5021MM-1-NOPB

      AC/DC Converters AC-DC Crnt Mode PWM Cntlr
      STU7N105K5

      Mfr.#: STU7N105K5

      OMO.#: OMO-STU7N105K5

      MOSFET N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFETs in IPAK package
      STRVS185X02B

      Mfr.#: STRVS185X02B

      OMO.#: OMO-STRVS185X02B-STMICROELECTRONICS

      TVS DIODE 128V 185V SMB
      STRVS280X02F

      Mfr.#: STRVS280X02F

      OMO.#: OMO-STRVS280X02F-STMICROELECTRONICS

      TVS Diodes - Transient Voltage Suppressors Rep Volt Suppressor TVS 280V Ipp 2A
      Disponibilidad
      Valores:
      Available
      En orden:
      1986
      Ingrese la cantidad:
      El precio actual de STU2N105K5 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,83 US$
      1,83 US$
      10
      1,55 US$
      15,50 US$
      100
      1,24 US$
      124,00 US$
      500
      1,09 US$
      545,00 US$
      1000
      0,90 US$
      899,00 US$
      3000
      0,84 US$
      2 514,00 US$
      6000
      0,81 US$
      4 842,00 US$
      9000
      0,78 US$
      6 975,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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