IRF6785MTRPBF

Mfr. #:: IRF6785MTRPBF
Fabricante:: Infineon / IR
Descripción:: MOSFET 200V 1 x N-CH HEXFET for Digital Audio
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IRF6785MTRPBF Ficha de datos
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Atributo del producto
Valor de atributo

Fabricante:: Infineon

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: DirectFET-MZ

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 200 V

Id - Corriente de drenaje continua:: 19 A

Rds On - Resistencia de la fuente de drenaje:: 85 mOhms

Vgs - Voltaje puerta-fuente:: 20 V

Qg - Carga de puerta:: 26 nC

Temperatura mínima de funcionamiento:: - 40 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 57 W

Configuración:: Único

Modo de canal:: Mejora

Nombre comercial:: DirectFET

Embalaje:: Carrete

Altura:: 0.7 mm

Longitud:: 6.35 mm

Tipo de transistor:: 1 N-Channel

Ancho:: 5.05 mm

Marca:: Infineon / IR

Otoño:: 14 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 8.6 ns

Cantidad de paquete de fábrica:: 4800

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 7.2 ns

Tiempo típico de retardo de encendido:: 6.2 ns

Parte # Alias:: SP001562032

Tags: IRF67, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6785MTRPBF Descripción

***ure Electronics: N-Channel 200 V 100 mOhm 36 nC SMT HEXFET® Power Mosfet - DIRECTFET MZ

***ineon: Target Applications: Battery Operated Drive; Class D Audio; Load Switch High Side

***ark: MOSET TRANSISTOR; Transistor Type:MOSFET; Continuous Drain Current, Id:3.4A; Drain Source Voltage, Vds:200V; On Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:5V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes

***ernational Rectifier: A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 19 amperes optimized with low on resistance for applications such as Class D Audio Amplifier. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in pa

***(Formerly Allied Electronics): IRFS4620PBF N-channel MOSFET Transistor, 24 A, 200 V, 3-Pin D2PAK | Infineon IRFS4620PBF

***ure Electronics: Single N-Channel 200 V 77.5 mOhm 25 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK Tube

***icontronic: Power Field-Effect Transistor, 24A I(D), 200V, 0.0775ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N-CH 200V 24A D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.0637ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power D

***ure Electronics: Single N-Channel 200 V 78 mOhm 38 nC HEXFET® Power Mosfet - TO-252AA

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED

*** Source Electronics: MOSFET N-CH 200V 24A DPAK / Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) DPAK T/R

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

*** Stop Electro: Power Field-Effect Transistor, 24A I(D), 200V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: N Channel Mosfet, 200V, 24A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:24A; On Resistance Rds(On):0.078Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***ernational Rectifier: Digital Audio 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

***et: Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R

***(Formerly Allied Electronics): AUDIO MOSFET, 200V, 24A, 78 MOHM, 25 NC QG, D2PAK

***ark: N CH DIG AUDIO MOSFET, HEXFET, 200V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:200V; On Resistance Rds(on):63.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:144W ;RoHS Compliant: Yes

***emi: N-Channel UltraFET Trench® MOSFET 200V, 20A, 77mΩ

***ure Electronics: FDMS2672 Series 200 V 77 mOhm N-Channel UltraFET Trench Mosfet - Power-56-8

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:3.7A; Drain Source Voltage, Vds:200V; On Resistance, Rds(on):64mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3.1V

***rchild Semiconductor: UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

***nell: MOSFET, N, SMD, MLP; Transistor Type:UltraFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:3.7A; Resistance, Rds On:0.077ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3.1V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:20A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS2672; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V

***ure Electronics: Single N-Channel 200 V 0.09 Ohms Surface Mount Power Mosfet - TO-252

***roFlash: Power Field-Effect Transistor, 19A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ment14 APAC: MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:200V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:3W; Transistor Case Style:TO-252; No. of Pins:3; Current Id Max:19A; Package / Case:DPAK; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IRF6785MTRPBF DISTI # V72:2272_13890116	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 3.4A 7-Pin Direct-FET MZ T/R RoHS: Compliant	4800	3000:$1.1646 1000:$1.1772 500:$1.4165 250:$1.6050 100:$1.6667 25:$1.8197 10:$2.0219 1:$2.3544
IRF6785MTRPBF DISTI # IRF6785MTRPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 200V 3.4A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4536In Stock	1000:$1.4457 500:$1.7448 100:$2.2433 10:$2.7920 1:$3.0900
IRF6785MTRPBF DISTI # IRF6785MTRPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 200V 3.4A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4536In Stock	1000:$1.4457 500:$1.7448 100:$2.2433 10:$2.7920 1:$3.0900
IRF6785MTRPBF DISTI # IRF6785MTRPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 200V 3.4A DIRECTFET RoHS: Compliant Min Qty: 4800 Container: Tape & Reel (TR)	Temporarily Out of Stock	4800:$1.2584
IRF6785MTRPBF DISTI # 30702329	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 3.4A 7-Pin Direct-FET MZ T/R RoHS: Compliant	4800	4800:$1.1040
IRF6785MTRPBF DISTI # 31262058	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 3.4A 7-Pin Direct-FET MZ T/R RoHS: Compliant	4800	3000:$1.1646 1000:$1.1772 500:$1.4165 250:$1.6050 100:$1.6667 25:$1.8197 10:$2.0219 6:$2.3544
IRF6785MTRPBF DISTI # SP001562032	Infineon Technologies AG	Trans MOSFET N-CH 200V 3.4A 7-Pin Direct-FET MZ T/R (Alt: SP001562032) RoHS: Compliant Min Qty: 4800 Container: Tape and Reel	Europe - 0	4800:€1.4399 9600:€1.1999 19200:€1.1069 28800:€1.0279 48000:€0.9599
IRF6785MTRPBF DISTI # 49AC0326	Infineon Technologies AG	MOSFET, N-CH, 200V, 19A, DIRECTFET MZ,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power RoHS Compliant: Yes	4798	1:$2.5900 10:$2.2000 25:$2.0500 50:$1.9100 100:$1.7600 250:$1.6600 500:$1.5500 1000:$1.2800
IRF6785MTRPBF DISTI # 70019617	Infineon Technologies AG	MOSFET,200V,15A,100 MOHM,26 NC QG,MED CAN RoHS: Compliant	0	4800:$1.2500 9600:$1.2250 24000:$1.1880
IRF6785MTRPBF DISTI # 942-IRF6785MTRPBF	Infineon Technologies AG	MOSFET 200V 1 x N-CH HEXFET for Digital Audio RoHS: Compliant	5312	1:$2.5900 10:$2.2000 100:$1.7600 500:$1.5500 1000:$1.2800 2500:$1.1900 4800:$1.1500
IRF6785MTRPBF DISTI # 2839482	Infineon Technologies AG	MOSFET, N-CH, 200V, 19A, DIRECTFET MZ RoHS: Compliant	4798	1:$2.6700 10:$2.4900 100:$2.2100 250:$2.0900 500:$1.9800 1000:$1.8800
IRF6785MTRPBF DISTI # 2839482	Infineon Technologies AG	MOSFET, N-CH, 200V, 19A, DIRECTFET MZ RoHS: Compliant	4798	500:£1.1700 250:£1.2600 100:£1.3400 10:£1.6600 1:£2.2100

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Disponibilidad

Valores:: Available
En orden:: 1990
Ingrese la cantidad:

El precio actual de IRF6785MTRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~2,58 US$~~; ~~2,58 US$~~

10: ~~2,20 US$~~; ~~22,00 US$~~

100: ~~1,76 US$~~; ~~176,00 US$~~

500: ~~1,54 US$~~; ~~770,00 US$~~

1000: ~~1,27 US$~~; ~~1 270,00 US$~~

2500: ~~1,18 US$~~; ~~2 950,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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IRF6785MTRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes