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VN3205N3-G

VN3205N3-G
Mfr. #:
VN3205N3-G
Fabricante:
Microchip Technology
Descripción:
MOSFET 50V 0.3Ohm
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
VN3205N3-G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
VN3205N3-G más información VN3205N3-G Product Details
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-92-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
50 V
Id - Corriente de drenaje continua:
1.2 A
Rds On - Resistencia de la fuente de drenaje:
300 mOhms
Vgs th - Voltaje umbral puerta-fuente:
800 mV
Vgs - Voltaje puerta-fuente:
10 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
A granel
Altura:
5.33 mm
Longitud:
5.21 mm
Tipo de transistor:
1 N-Channel
Escribe:
FET
Ancho:
4.19 mm
Marca:
Tecnología de microchip
Transconductancia directa - Mín .:
1 S
Otoño:
25 ns
Tipo de producto:
MOSFET
Hora de levantarse:
15 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
25 ns
Tiempo típico de retardo de encendido:
10 ns
Unidad de peso:
0.016000 oz
Tags
VN3205N3-G, VN3205N3, VN3205N, VN3205, VN320, VN32, VN3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***th Star Micro
Transistor MOSFET N-CH 50V 1.2A 3-Pin TO-92
***ure Electronics
VN3205 Series 50 V 1.2 A N-Channel Enhancement-Mode Vertical DMOS FETs - TO-92-3
***ark
Mosfet, N-Ch, 50V, 1.2A, 150Deg C, 1W; Transistor Polarity:n Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:1.2A; On Resistance Rds(On):0.3Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
*** Stop Electro
Small Signal Field-Effect Transistor, 1.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***ure Electronics
N-Channel 60 V 0.33 Ohm Enhancement Mode Vertical DMOS FET-TO-92
***ponent Sense
Trans MOSFET N-CH 60V 1.1A Automotive 3-Pin E-Line
***ark
Mosfet Bvdss: 41V~60V Ep3sc Bulk 4K Rohs Compliant: Yes
***(Formerly Allied Electronics)
MOSFET N-Channel 60V 1.1A E-Line
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***ment14 APAC
MOSFET, N, LOGIC, E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:850mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.1A; Current Temperature:25°C; Device Marking:ZVN4306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:850mW; Power Dissipation Pd:850mW; Power Dissipation Ptot Max:850mW; Pulse Current Idm:20A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
N-Channel 60 V 0.33 Ohm Through Hole Enhancement Mode DMOS FET - TO-92
***ical
Trans MOSFET N-CH 60V 1.1A Automotive 3-Pin E-Line
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.1A; On Resistance Rds(On):0.33Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; No. Of Pins:3Pinsrohs Compliant: No
***(Formerly Allied Electronics)
MOSFET P-ch 50V 0.175A 10R 0.625W E-Line
***ark
P CHANNEL MOSFET, -50V, 175mA TO-92; Transistor Polarity:P Channel; Continuous Drain Current, Id:170mA; Drain Source Voltage, Vds:-50V; On Resistance, Rds(on):10ohm; Rds(on) Test Voltage, Vgs:-5V; Threshold Voltage, Vgs Typ:-2V ;RoHS Compliant: Yes
***nell
MOSFET, P E-LINE; Transistor Polarity: P Channel; Continuous Drain Current Id: 170mA; Drain Source Voltage Vds: -50V; On Resistance Rds(on): 10ohm; Rds(on) Test Voltage Vgs: -5V; Threshold Voltage Vgs: -800mV; Power Dissipation Pd: 625mW; Transistor Case Style: E-Line; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Spacing: 1.27mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 625mW; Pulse Current Idm: 500mA
***p One Stop Global
Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 T/R
***el Electronic
Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 500 mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
***et Europe
Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
***r Electronics
Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
***p One Stop Global
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
***el Electronic
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Parte # Mfg. Descripción Valores Precio
VN3205N3-G
DISTI # V99:2348_06516015		Microchip Technology IncTrans MOSFET N-CH Si 50V 1.2A 3-Pin TO-92 Bag
RoHS: Compliant		304
  • 100:$0.9040
  • 25:$0.9952
  • 10:$1.1652
  • 1:$1.1903
VN3205N3-G
DISTI # VN3205N3-G-ND		Microchip Technology IncMOSFET N-CH 50V 1.2A TO92-3
RoHS: Compliant
Min Qty: 1
Container: Bag		1298In Stock
  • 100:$0.9682
  • 25:$1.0608
  • 1:$1.2800
VN3205N3-G-P002
DISTI # VN3205N3-G-P002-ND		Microchip Technology IncMOSFET N-CH 50V 1.2A TO92-3
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$1.0300
VN3205N3-G
DISTI # 23961797		Microchip Technology IncTrans MOSFET N-CH Si 50V 1.2A 3-Pin TO-92 Bag
RoHS: Compliant		1475
  • 100:$0.6273
  • 99:$0.6482
VN3205N3-G
DISTI # 19131372		Microchip Technology IncTrans MOSFET N-CH Si 50V 1.2A 3-Pin TO-92 Bag
RoHS: Compliant		500
  • 500:$0.8813
VN3205N3-G
DISTI # 25853408		Microchip Technology IncTrans MOSFET N-CH Si 50V 1.2A 3-Pin TO-92 Bag
RoHS: Compliant		304
  • 100:$0.9040
  • 25:$0.9990
  • 10:$1.1652
VN3205N3-G
DISTI # PL602-20-K52TC		Microchip Technology IncTrans MOSFET N-CH 50V 1.2A 3-Pin TO-92 Bag - Bag (Alt: PL602-20-K52TC)
RoHS: Compliant
Min Qty: 360
Container: Bag		Americas - 0
  • 360:$1.8900
  • 400:$1.8900
  • 760:$1.7900
  • 1800:$1.7900
  • 3600:$1.6900
VN3205N3-G-P002
DISTI # VN3205N3-G-P002		Microchip Technology IncTrans MOSFET N-CH 50V 1.2A 3-Pin TO-92 T/R - Tape and Reel (Alt: VN3205N3-G-P002)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 2000:$0.7099
  • 4000:$0.6859
  • 8000:$0.6639
  • 12000:$0.6439
  • 20000:$0.6339
VN3205N3-G
DISTI # 55AC4283		Microchip Technology IncD-MOSFET, N-CH, 1.2A, 50V, TO-92-3,Transistor Polarity:N Channel,Continuous Drain Current Id:1.2A,Drain Source Voltage Vds:50V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.4V,Power RoHS Compliant: Yes959
  • 1:$1.2200
  • 25:$1.0100
  • 100:$0.9180
VN3205N3-G-P002
DISTI # 53Y4339		Microchip Technology IncMOSFET, N-CHANNEL ENHANCEMENT-MODE, 50V, 0.3 Ohm3 TO-92 RVT/R0
  • 1:$1.3600
  • 25:$1.1300
  • 100:$1.0300
VN3205N3-G
DISTI # 70451402		Microchip Technology IncMOSFET,N-CHANNEL ENHANCEMENT-MODE,50V,0.3 Ohm3 TO-92BAG
RoHS: Compliant		684
  • 1:$2.2700
  • 10:$1.9700
  • 25:$1.6900
  • 100:$1.5300
VN3205N3-G-P002
DISTI # 70483897		Microchip Technology IncMOSFET,N-CHANNEL ENHANCEMENT-MODE,50V,0.3 Ohm3 TO-92RVT/R
RoHS: Compliant		0
  • 2000:$0.9800
VN3205N3-G
DISTI # 689-VN3205N3-G		Microchip Technology IncMOSFET 50V 0.3Ohm
RoHS: Compliant		2086
  • 1:$1.2800
  • 10:$1.2600
  • 25:$1.0700
  • 100:$0.9690
VN3205N3
DISTI # 689-VN3205N3		Microchip Technology IncMOSFET 50V 0.3Ohm
RoHS: Not compliant		0
    VN3205N3-G-P002
    DISTI # 689-VN3205N3-G-P002    		Microchip Technology IncMOSFET N-CH Enhancmnt Mode MOSFET
    RoHS: Compliant    		676
    • 1:$1.3600
    • 10:$1.3400
    • 25:$1.1400
    • 100:$1.0300
    VN3205N3-G P014
    DISTI # 689-VN3205N3-G-P014    		Microchip Technology IncMOSFET N-CH Enhancmnt Mode MOSFET
    RoHS: Compliant    		0
    • 1:$1.5800
    • 10:$1.3200
    • 25:$1.1000
    • 100:$1.0000
    • 250:$0.8630
    • 500:$0.7410
    • 1000:$0.6450
    VN3205N3-G P003
    DISTI # 689-VN3205N3-G-P003    		Microchip Technology IncMOSFET N-CH Enhancmnt Mode MOSFET
    RoHS: Compliant    		0
    • 1:$1.5800
    • 10:$1.3200
    • 25:$1.1000
    • 100:$1.0000
    • 250:$0.8630
    • 500:$0.7410
    • 1000:$0.6450
    VN3205N3-G P005
    DISTI # 689-VN3205N3-G-P005    		Microchip Technology IncMOSFET N-CH Enhancmnt Mode MOSFET
    RoHS: Compliant    		0
      VN3205N3-G P013
      DISTI # 689-VN3205N3-G-P013      		Microchip Technology IncMOSFET N-CH Enhancmnt Mode MOSFET
      RoHS: Compliant      		0
        VN3205N3-G
        DISTI # VN3205N3-G        		Microchip Technology IncMOSFETN-CHANNEL ENHANCEMENT-MODE50V0.3 Ohm
        RoHS: Compliant        		2522
        • 1000:$0.7800
        • 100:$0.9400
        • 26:$1.0300
        • 1:$1.2400
        VN3205N3-G-P002
        DISTI # VN3205N3-G-P002        		Microchip Technology IncMOSFETN-CHANNEL ENHANCEMENT-MODE50V0.3 Ohm
        RoHS: Compliant        		10000
        • 1000:$0.8300
        • 100:$1.0000
        • 26:$1.1000
        • 1:$1.3200
        VN3205N3-GMicrochip Technology Inc 
        RoHS: Compliant        		1475 In Stock
        • 2000:$0.5600
        • 1000:$0.5800
        • 500:$0.5900
        • 100:$0.6000
        • 50:$0.6200
        • 40:$0.6300
        VN3205N3-G
        DISTI # 2851592        		Microchip Technology IncD-MOSFET, N-CH, 1.2A, 50V, TO-92-3
        RoHS: Compliant        		966
        • 1:£0.9600
        • 25:£0.7950
        • 50:£0.7600
        • 100:£0.7250
        • 250:£0.7110
        VN3205N3-G
        DISTI # VN3205N3G        		Microchip Technology Inc 1475
        • 40:$0.6300
        • 50:$0.6200
        • 100:$0.6000
        • 500:$0.5900
        • 1000:$0.5800
        • 2000:$0.5600
        VN3205N3-G
        DISTI # C1S505200898278        		Microchip Technology IncTrans MOSFET N-CH Si 50V 1.2A 3-Pin TO-92 Bag
        RoHS: Compliant        		304
        • 100:$0.9040
        • 25:$0.9990
        • 10:$1.1652
        VN3205N3-G
        DISTI # C1S505200904047        		Microchip Technology IncTrans MOSFET N-CH Si 50V 1.2A 3-Pin TO-92 Bag
        RoHS: Compliant        		778
        • 100:$0.8656
        • 25:$0.9440
        • 10:$1.0958
        VN3205N3-G
        DISTI # 2851592        		Microchip Technology IncD-MOSFET, N-CH, 1.2A, 50V, TO-92-3
        RoHS: Compliant        		959
        • 1:$2.0400
        • 25:$1.7000
        • 100:$1.5500
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        Disponibilidad
        Valores:
        Available
        En orden:
        1984
        Ingrese la cantidad:
        El precio actual de VN3205N3-G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        1,27 US$
        1,27 US$
        10
        1,25 US$
        12,50 US$
        25
        1,05 US$
        26,25 US$
        100
        0,96 US$
        95,80 US$
        250
        0,85 US$
        212,75 US$
        500
        0,73 US$
        363,00 US$
        1000
        0,66 US$
        661,00 US$
        5000
        0,60 US$
        3 020,00 US$
        10000
        0,59 US$
        5 870,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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