APT7M120S

APT7M120S
Mfr. #:
APT7M120S
Fabricante:
Microchip / Microsemi
Descripción:
MOSFET FG, MOSFET, 1200V, TO-268
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
APT7M120S Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT7M120S DatasheetAPT7M120S Datasheet (P4)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
D3PAK-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
1.2 kV
Id - Corriente de drenaje continua:
8 A
Rds On - Resistencia de la fuente de drenaje:
1.5 Ohms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
80 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
335 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Tipo de transistor:
1 N-Channel
Marca:
Microchip / Microsemi
Transconductancia directa - Mín .:
8 S
Otoño:
13 ns
Tipo de producto:
MOSFET
Hora de levantarse:
8 ns
Cantidad de paquete de fábrica:
1
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
45 ns
Tiempo típico de retardo de encendido:
14 ns
Unidad de peso:
1.340411 oz
Tags
APT7, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***N
    A***N
    RU

    Good bridges work! Fast shipping!

    2019-01-11
    M***v
    M***v
    RU

    Came in safe and sound, thanks to the seller

    2019-05-08
    V***i
    V***i
    UA

    Delivery-22 days. i recommend the seller.

    2019-02-15
    I***v
    I***v
    RU

    Leds quality work well, product quality will show time.

    2019-05-31
***ical
Trans MOSFET N-CH Si 1.2KV 8A 3-Pin(2+Tab) D3PAK Tube
***et
Power MOS 8 MOSFET N-Channel 1200V 8A 3-Pin TO-268
*** Stop Electro
Power Field-Effect Transistor, 7A I(D), 1200V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***emi
N-Channel Power MOSFET, QFET®, 900 V, 6.3 A, 1.9 Ω, D2PAK
*** Stop Electro
Power Field-Effect Transistor, 6.3A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
***et
Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R
***ser
MOSFETs 600V N-Channel QFET
***el Nordic
Contact for details
***ark
MOSFET, P-CH, 60V, 8.8A, TO-263; Transistor Polarity:P Channel; Continuous Drain
***nell
MOSFET, P-CH, 60V, 8.8A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.8A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.221ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:42W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
***icroelectronics
N-channel 950 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFET in a H2PAK-2 package
***ponent Sense
power mosfet 950V 30V-TRANSISTOR FET N-C
***ical
Trans MOSFET N-CH 950V 6A 3-Pin(2+Tab) H2PAK T/R
***enic
950V 6A 110W 1.25´Î@10V3A 5V@100Ã×A N Channel H2PAK-2 MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 6A I(D), 950V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N-CH, 950V, 6A, 150DEG C, 110W; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 950V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: H2PAK-2; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh K5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***icroelectronics
N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in D2PAK package
***ical
Trans MOSFET N-CH 800V 4.5A 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
N-Channel 800 V 4.5 A 1. 6 mOhm Surface Mount SuperMESH™ K5 Mosfet - D2Pak
*** Electronic Components
MOSFET N-channel 950 V, 0.65 Ohm typ., 8 A MDmesh K5 Power MOSFET in D2PAK package
***ure Electronics
N-Channel 950 V 0.8 Ohm Surface Mount Power MOSFET - D2PAK-3
***r Electronics
Power Field-Effect Transistor, 8A I(D), 950V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Parte # Mfg. Descripción Valores Precio
APT7M120S
DISTI # APT7M120S-ND
Microsemi CorporationMOSFET N-CH 1200V 8A D3PAK
RoHS: Compliant
Min Qty: 79
Container: Bulk
Temporarily Out of Stock
  • 79:$6.6911
APT7M120S
DISTI # APT7M120S
Microchip Technology IncPower MOS 8 MOSFET N-Channel 1200V 8A 3-Pin TO-268 - Rail/Tube (Alt: APT7M120S)
RoHS: Compliant
Min Qty: 79
Container: Tube
Americas - 0
  • 790:$3.9900
  • 395:$4.0900
  • 237:$4.1900
  • 158:$4.2900
  • 79:$4.4900
APT7M120S
DISTI # 494-APT7M120S
Microchip Technology IncMOSFET Power MOSFET - MOS8
RoHS: Compliant
75
  • 1:$9.2500
  • 5:$8.8900
  • 10:$8.5600
  • 25:$7.8600
  • 50:$7.5800
  • 100:$7.3100
  • 250:$6.7100
  • 500:$6.4700
  • 1000:$6.2400
Imagen Parte # Descripción
HVM12

Mfr.#: HVM12

OMO.#: OMO-HVM12

Rectifiers HVM 350mA 12000v
HVM12

Mfr.#: HVM12

OMO.#: OMO-HVM12-111

Rectifiers HVM 350mA 12000v
NLV32T-330J-EF

Mfr.#: NLV32T-330J-EF

OMO.#: OMO-NLV32T-330J-EF-TDK

Fixed Inductors 33uH 5.6ohms 70mA Wound Ferrite
Disponibilidad
Valores:
75
En orden:
2058
Ingrese la cantidad:
El precio actual de APT7M120S es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
9,25 US$
9,25 US$
5
8,89 US$
44,45 US$
10
8,56 US$
85,60 US$
25
7,86 US$
196,50 US$
50
7,58 US$
379,00 US$
100
7,31 US$
731,00 US$
250
6,71 US$
1 677,50 US$
500
6,47 US$
3 235,00 US$
1000
6,24 US$
6 240,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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