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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SQ2308CES-T1-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SQ2308CES-T1_GE3 RoHS: Compliant | Americas - 42000 |
|
| SQ2308ES-T1-GE3 | Vishay Siliconix | POWER FIELD-EFFECT TRANSISTOR, 2.3A I(D), 60V, 0.155OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236 | 3353 |
|
| SQ2308EST1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 2.3A I(D), 60V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 RoHS: Compliant | Europe - 34125 |
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: SQ2308E OMO.#: OMO-SQ2308E-1190 |
Nuevo y original |
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Mfr.#: SQ2308ES OMO.#: OMO-SQ2308ES-1190 |
Nuevo y original |
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Mfr.#: SQ2308ES-T1-GE3 OMO.#: OMO-SQ2308ES-T1-GE3-1190 |
Trans MOSFET N-CH 60V 2.3A 3-Pin SOT-23 T/R (Alt: SQ2308ES-T1-GE3) |
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Mfr.#: SQ2308ES-TI-GE3 OMO.#: OMO-SQ2308ES-TI-GE3-1190 |
Nuevo y original |
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Mfr.#: SQ2308EST1GE3 OMO.#: OMO-SQ2308EST1GE3-1190 |
Power Field-Effect Transistor, 2.3A I(D), 60V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 |