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APT50GF120JRDQ3

APT50GF120JRDQ3
Mfr. #:
APT50GF120JRDQ3
Fabricante:
Microchip / Microsemi
Descripción:
IGBT Modules FG, IGBT-COMBI, 1200V, 50A, SOT-227
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
APT50GF120JRDQ3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT50GF120JRDQ3 DatasheetAPT50GF120JRDQ3 Datasheet (P4-P6)APT50GF120JRDQ3 Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
Módulos IGBT
RoHS:
Y
Producto:
Módulos de silicio IGBT
Voltaje colector-emisor VCEO Max:
1.2 kV
Voltaje de saturación colector-emisor:
2.5 V
Corriente continua del colector a 25 C:
120 A
Corriente de fuga puerta-emisor:
100 nA
Pd - Disipación de energía:
521 W
Paquete / Caja:
SOT-227-4
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Tubo
Altura:
9.6 mm
Longitud:
38.2 mm
Rango de temperatura de funcionamiento:
- 55 C to + 150 C
Ancho:
25.4 mm
Marca:
Microchip / Microsemi
Estilo de montaje:
Montaje en chasis
Voltaje máximo del emisor de puerta:
30 V
Tipo de producto:
Módulos IGBT
Cantidad de paquete de fábrica:
1
Subcategoría:
IGBT
Nombre comercial:
ISOTOP
Unidad de peso:
1.058219 oz
Tags
APT50GF1, APT50GF, APT50G, APT50, APT5, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 1.2KV 120A 4-Pin SOT-227
***th Star Micro
Insulated Gate Bipolar Transistor-NPT Medium Speed
***i-Key
IGBT MOD 1200V 120A 521W ISOTOP
Parte # Mfg. Descripción Valores Precio
APT50GF120JRDQ3
DISTI # APT50GF120JRDQ3-ND		Microsemi CorporationIGBT 1200V 120A 521W SOT227
RoHS: Compliant
Min Qty: 1
Container: Tube		Temporarily Out of Stock
  • 100:$56.8271
  • 30:$59.6087
  • 10:$63.5830
  • 1:$67.5600
APT50GF120JRDQ3
DISTI # 494-APT50GF120JRDQ3		Microsemi CorporationIGBT Modules Insulated Gate Bipolar Transistor - NPT Low Frequency - Combi
RoHS: Compliant		3
  • 1:$66.2300
  • 2:$65.0200
  • 5:$64.2800
  • 10:$62.3300
  • 25:$60.0500
  • 50:$58.1400
  • 100:$55.4700
APT50GF120JRDQ3
DISTI # APT50GF120JRDQ3		Microsemi CorporationPOWER MOSFET TRANSISTOR
RoHS: Compliant		0
  • 10:$50.6000
  • 100:$49.3200
  • 500:$48.7000
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Mfr.#: P6KE300A

OMO.#: OMO-P6KE300A

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021801.6MXP

Mfr.#: 021801.6MXP

OMO.#: OMO-021801-6MXP-LITTELFUSE

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P6KE300A

Mfr.#: P6KE300A

OMO.#: OMO-P6KE300A-LITTELFUSE

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Mfr.#: UD4KB100-BP

OMO.#: OMO-UD4KB100-BP-MICRO-COMMERCIAL-COMPONENTS

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Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de APT50GF120JRDQ3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
66,23 US$
66,23 US$
2
65,02 US$
130,04 US$
5
64,28 US$
321,40 US$
10
62,33 US$
623,30 US$
25
60,05 US$
1 501,25 US$
50
58,14 US$
2 907,00 US$
100
55,47 US$
5 547,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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