IXFN100N50Q3

IXFN100N50Q3
Mfr. #:
IXFN100N50Q3
Fabricante:
Littelfuse
Descripción:
MOSFET Q3Class HiPerFET Pwr MOSFET 500V/82A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFN100N50Q3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN100N50Q3 DatasheetIXFN100N50Q3 Datasheet (P4-P5)
ECAD Model:
Más información:
IXFN100N50Q3 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
Montaje en chasis
Paquete / Caja:
SOT-227-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
500 V
Id - Corriente de drenaje continua:
82 A
Rds On - Resistencia de la fuente de drenaje:
49 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
255 nC
Pd - Disipación de energía:
960 W
Configuración:
Único
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Serie:
IXFN100N50
Tipo de transistor:
1 N-Channel
Marca:
IXYS
Tipo de producto:
MOSFET
Hora de levantarse:
250 ns
Cantidad de paquete de fábrica:
10
Subcategoría:
MOSFET
Unidad de peso:
1.058219 oz
Tags
IXFN100N5, IXFN100N, IXFN100, IXFN10, IXFN1, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***trelec
MOSFET Module, Single - N-Channel, 500V, 82A, 960W, SOT-227B
***i-Key
MOSFET N-CH 500V 82A SOT227B
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descripción Valores Precio
IXFN100N50Q3
DISTI # IXFN100N50Q3-ND
IXYS CorporationMOSFET N-CH 500V 82A SOT-227
RoHS: Compliant
Min Qty: 1
Container: Tube
15In Stock
  • 100:$34.9950
  • 30:$37.3280
  • 10:$40.3610
  • 1:$43.1600
IXFN100N50Q3
DISTI # 747-IXFN100N50Q3
IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 500V/82A
RoHS: Compliant
3
  • 1:$43.1600
  • 5:$41.6500
  • 10:$40.3700
  • 25:$37.3300
  • 50:$36.2300
  • 100:$35.0000
  • 200:$32.6700
IXFN100N50Q3
DISTI # 8047565
IXYS CorporationMOSFET N-CH 500V 82A Q3 HIPERFET SOT227B, EA6
  • 30:£25.4700
  • 10:£25.9900
  • 5:£26.9300
  • 2:£28.1800
  • 1:£31.3100
Imagen Parte # Descripción
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Mfr.#: SN74LVC1G97DBVR

OMO.#: OMO-SN74LVC1G97DBVR

Logic Gates Cnfgrble Mult Function Gate
SN74LV1T34DBVR

Mfr.#: SN74LV1T34DBVR

OMO.#: OMO-SN74LV1T34DBVR

Translation - Voltage Levels SGL Pwr Spply Buffer GATE CMOS
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Mfr.#: SN74LVC2T45DCURE4

OMO.#: OMO-SN74LVC2T45DCURE4

Translation - Voltage Levels Dual-Bit Dual Supply Transceiver
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Mfr.#: LTST-C191KRKT

OMO.#: OMO-LTST-C191KRKT

Standard LEDs - SMD Red Clear 631nm
LTST-C191KFKT

Mfr.#: LTST-C191KFKT

OMO.#: OMO-LTST-C191KFKT

Standard LEDs - SMD Orange Clear 605nm
OPA314AIDCKT

Mfr.#: OPA314AIDCKT

OMO.#: OMO-OPA314AIDCKT-TEXAS-INSTRUMENTS

Operational Amplifiers - Op Amps 3MHz,Low-Pwr,Low- Noise,RRIO,1.8V CMOS
TAJA475K016SNJ

Mfr.#: TAJA475K016SNJ

OMO.#: OMO-TAJA475K016SNJ-1070

Tantalum Capacitors - Solid SMD 16volts 4.7uF 10%
TLJA107M006R0800

Mfr.#: TLJA107M006R0800

OMO.#: OMO-TLJA107M006R0800-AVX

Tantalum Capacitors - Solid SMD 6.3volts 100uF 20% ESR=800
SN74LV1T34DBVR

Mfr.#: SN74LV1T34DBVR

OMO.#: OMO-SN74LV1T34DBVR-TEXAS-INSTRUMENTS

Buffers & Line Drivers SGL Pwr Spply Buffer GATE CMOS
Disponibilidad
Valores:
13
En orden:
1996
Ingrese la cantidad:
El precio actual de IXFN100N50Q3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
43,16 US$
43,16 US$
5
41,65 US$
208,25 US$
10
40,37 US$
403,70 US$
25
37,33 US$
933,25 US$
50
36,23 US$
1 811,50 US$
100
35,00 US$
3 500,00 US$
200
32,67 US$
6 534,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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