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SI4427BDY-T1-GE3

SI4427BDY-T1-GE3
Mfr. #:
SI4427BDY-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4427BDY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4427BDY-T1-GE3 DatasheetSI4427BDY-T1-GE3 Datasheet (P4-P6)SI4427BDY-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Más información:
SI4427BDY-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SI4
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Parte # Alias:
SI4427BDY-GE3
Unidad de peso:
0.006596 oz
Tags
SI4427BDY-T, SI4427B, SI4427, SI442, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 30 V 0.0195 Ohm 70 nC 1.5 W Silicon SMT Mosfet - SOIC-8
***et
Trans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R
***ment14 APAC
P CHANNEL MOSFET, -30V, 12.6A, SOIC
***ark
Transistor; Transistor Polarity:P Channel; Continuous Drain Current, Id:-12.6A; Drain Source Voltage, Vds:-30V; On Resistance, Rds(on):0.0195ohm; Rds(on) Test Voltage, Vgs:-2.5V; Threshold Voltage, Vgs Typ:-1.4V ;RoHS Compliant: Yes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI4427BDY-T1-GE3
DISTI # V72:2272_09216487		Vishay IntertechnologiesTrans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R
RoHS: Compliant		4882
  • 3000:$0.6284
  • 1000:$0.6719
  • 500:$0.8261
  • 250:$0.9439
  • 100:$0.9542
  • 25:$1.1855
  • 10:$1.1996
  • 1:$1.4064
SI4427BDY-T1-GE3
DISTI # SI4427BDY-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 30V 9.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4985In Stock
  • 1000:$0.9693
  • 500:$1.1698
  • 100:$1.5041
  • 10:$1.8720
  • 1:$2.0700
SI4427BDY-T1-GE3
DISTI # SI4427BDY-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 30V 9.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4985In Stock
  • 1000:$0.9693
  • 500:$1.1698
  • 100:$1.5041
  • 10:$1.8720
  • 1:$2.0700
SI4427BDY-T1-GE3
DISTI # SI4427BDY-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 30V 9.7A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.8761
SI4427BDY-T1-GE3
DISTI # 27510656		Vishay IntertechnologiesTrans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R
RoHS: Compliant		4882
  • 3000:$0.6284
  • 1000:$0.6719
  • 500:$0.8261
  • 250:$0.9439
  • 100:$0.9542
  • 25:$1.1855
  • 10:$1.1996
SI4427BDY-T1-GE3
DISTI # SI4427BDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4427BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.7159
  • 5000:$0.6949
  • 10000:$0.6659
  • 15000:$0.6479
  • 25000:$0.6309
SI4427BDY-T1-GE3
DISTI # 15R5013		Vishay IntertechnologiesP CHANNEL MOSFET, -30V, 12.6A, SOIC, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-12.6A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0088ohm,Rds(on) Test Voltage Vgs:-2.5V,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.8090
  • 2500:$0.8030
  • 5000:$0.7790
  • 10000:$0.7500
SI4427BDY-T1-GE3
DISTI # 26R1876		Vishay IntertechnologiesP CHANNEL MOSFET, -30V, 12.6A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-9.7A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0088ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-600mV RoHS Compliant: Yes0
  • 1:$1.7300
  • 10:$1.4200
  • 25:$1.3100
  • 50:$1.2000
  • 100:$1.0900
  • 250:$1.0100
  • 500:$0.9360
SI4427BDY-T1-GE3
DISTI # 781-SI4427BDY-GE3		Vishay IntertechnologiesMOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V
RoHS: Compliant		1466
  • 1:$1.7300
  • 10:$1.4200
  • 100:$1.0900
  • 500:$0.9360
  • 1000:$0.7390
  • 2500:$0.6900
SI4427BDY-T1-GE3.
DISTI # 2118917		Vishay IntertechnologiesP CHANNEL MOSFET, -30V, 12.6A, SOIC
RoHS: Compliant		0
  • 2500:£0.8220
SI4427BDY-T1-GE3
DISTI # C1S803601998828		Vishay IntertechnologiesTrans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R
RoHS: Compliant		4882
  • 250:$0.8580
  • 100:$0.9534
  • 25:$1.0778
  • 10:$1.1975
SI4427BDY-T1-GE3..
DISTI # 8156751		Vishay Intertechnologies 
RoHS: Compliant		0
  • 1:$2.7500
  • 10:$2.2500
  • 100:$1.7300
  • 500:$1.4900
  • 1000:$1.1700
  • 2500:$1.1000
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Disponibilidad
Valores:
Available
En orden:
1985
Ingrese la cantidad:
El precio actual de SI4427BDY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,72 US$
1,72 US$
10
1,41 US$
14,10 US$
100
1,08 US$
108,00 US$
500
0,94 US$
468,00 US$
1000
0,74 US$
739,00 US$
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