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FDMS7602S

FDMS7602S
Mfr. #:
FDMS7602S
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 30V Dual N-Channel PowerTrench
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDMS7602S Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FDMS7602S más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
Power-56-8
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
30 A
Rds On - Resistencia de la fuente de drenaje:
7.5 mOhms, 5 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.8 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
20 nC, 33 nC
Pd - Disipación de energía:
1 W
Configuración:
Doble
Nombre comercial:
PowerTrench SyncFET
Embalaje:
Carrete
Altura:
0.8 mm
Longitud:
6 mm
Serie:
FDMS7602S
Tipo de transistor:
2 N-Channel
Ancho:
5 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
63 S, 87 S
Otoño:
2.3 ns, 3.2 ns
Tipo de producto:
MOSFET
Hora de levantarse:
2.5 ns, 3.8 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
20 ns, 27 ns
Tiempo típico de retardo de encendido:
8.6 ns, 11 ns
Unidad de peso:
0.007443 oz
Tags
FDMS760, FDMS76, FDMS7, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Transistor MOSFET Array Dual N-CH 30V 30A 8-Pin Power 56 T/R - Tape and Reel
***ment14 APAC
DUAL N CH MOSFET, POWERTRENCH, 30V, 30A,; DUAL N CH MOSFET, POWERTRENCH, 30V, 30A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:30A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.0075ohm
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
***ure Electronics
Single N-Channel 30 V 6.6 mOhm 20 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS
***ical
Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.8C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ark
MOSFET, N-CH, 30V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Curren
***emi
N-Channel Power Trench® MOSFET 30V, 26A, 5.5mΩ
***r Electronics
Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
***nell
MOSFET, N-CH, 30V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:41W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***ure Electronics
Single N-Channel 30 V 6.8 mOhm 36 nC HEXFET® Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 17.2A 8-Pin SOIC Tube
***icontronic
Small Signal Field-Effect Transistor, 17.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:17.2A; On Resistance Rds(On):0.0047Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes
*** Source Electronics
Trans MOSFET N-CH Si 30V 13.2A 8-Pin PQFN EP T/R / MOSFET N-CH 30V POWER56
***emi
N-Channel PowerTrench® MOSFET 30V, 9.5mΩ
***ure Electronics
Single N-Channel 30 V 14.5 mOhm 10 nC 2.5 W PowerTrench SMT Mosfet - POWER 56-8
***r Electronics
Power Field-Effect Transistor, 13.2A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance.
***nell
MOSFET, N CH, 30V, 20A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0076ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:27W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***emi
N-Channel PowerTrench® MOSFET 30V, 19.5A, 5.3mΩ
***(Formerly Allied Electronics)
Transistor, N-channel, PowerTrench MOSFET, 30V, 17.5A, 5.3mOhm, MLP8EP | ON Semiconductor FDMC7678
*** Stop Electro
Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***nell
MOSFET, N CH, 30V, 19.5A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:19.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
FDMS36xxS Power Stage Dual Asymmetric MOSFETs
ON Semiconductor FDMS36xxS Power Stage Dual Asymmetric MOSFET modules provide the highest output current capability among all 5mm x 6mm dual MOSFET solutions on the market. The FDMS36xxS dual asymmetric MOSFETs incorporate a control and synchronous MOSFET as well as a monolithic Schottky body diode in a PQFN package. The switch node has been internally connected to allow enable easy placement and routing of synchronous buck converters. The control MOSFET and synchronous MOSFET have been designed to provide optimal power efficiency for output currents up to 30A. These ON Semiconductor devices achieve industry-leading sub-2mΩ low side rDS(on) at high performance computing rated breakdown voltages. FDMS36xxS MOSFETs are optimized to minimize the combination of conduction and switching losses from 300kHz to 600kHz, delivering reliable, highest power efficiency for point-of-load and multi-phase synchronous buck DC-DC applications.Learn More
Parte # Mfg. Descripción Valores Precio
FDMS7602S
DISTI # 32873394		ON SemiconductorDUAL N-CHANNEL POWER TRENCH MO159000
  • 3000:$0.4188
FDMS7602S
DISTI # FDMS7602SCT-ND		ON SemiconductorMOSFET 2N-CH 30V 12A/17A POWER56
Min Qty: 1
Container: Cut Tape (CT)		8510In Stock
  • 1000:$0.5099
  • 500:$0.6458
  • 100:$0.7818
  • 10:$1.0030
  • 1:$1.1200
FDMS7602S
DISTI # FDMS7602SDKR-ND		ON SemiconductorMOSFET 2N-CH 30V 12A/17A POWER56
Min Qty: 1
Container: Digi-Reel®		8510In Stock
  • 1000:$0.5099
  • 500:$0.6458
  • 100:$0.7818
  • 10:$1.0030
  • 1:$1.1200
FDMS7602S
DISTI # FDMS7602STR-ND		ON SemiconductorMOSFET 2N-CH 30V 12A/17A POWER56
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 6000:$0.4389
  • 3000:$0.4620
FDMS7602S
DISTI # V72:2272_06338091		ON SemiconductorDUAL N-CHANNEL POWER TRENCH MO0
    FDMS7602S
    DISTI # V36:1790_06338091    		ON SemiconductorDUAL N-CHANNEL POWER TRENCH MO0
    • 3000:$0.4390
    FDMS7602S
    DISTI # FDMS7602S    		ON SemiconductorTrans MOSFET N-CH 30V 12A/17A 8-Pin Power 56 T/R (Alt: FDMS7602S)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 0
    • 30000:$0.5690
    • 18000:$0.5893
    • 12000:$0.6111
    • 6000:$0.6346
    • 3000:$0.6600
    FDMS7602S
    DISTI # FDMS7602S    		ON SemiconductorTrans MOSFET N-CH 30V 12A/17A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS7602S)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.4069
    • 18000:$0.4169
    • 12000:$0.4229
    • 6000:$0.4279
    • 3000:$0.4309
    FDMS7602S
    DISTI # FDMS7602S    		ON SemiconductorTrans MOSFET N-CH 30V 12A/17A 8-Pin Power 56 T/R (Alt: FDMS7602S)
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.5812
    • 18000:€0.6170
    • 12000:€0.6458
    • 6000:€0.6816
    • 3000:€0.7175
    FDMS7602S
    DISTI # 58T5427    		ON SemiconductorTrans MOSFET N-CH 30V 12A/17A 8-Pin Power 56 T/R - Product that comes on tape, but is not reeled (Alt: 58T5427)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1000:$0.4074
    • 500:$0.4125
    • 100:$0.4177
    • 50:$0.4231
    • 25:$0.4258
    • 10:$0.4286
    • 1:$0.4314
    FDMS7602S-T
    DISTI # FDMS7602S-T    		ON SemiconductorTrans MOSFET N-CH 30V12A@Q1/17A@Q2 8-Pin Power 56 T/R (Alt: FDMS7602S-T)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 0
      FDMS7602S
      DISTI # 92R5557      		ON SemiconductorDUAL N CHANNEL MOSFET, POWERTRENCH, 30V, 30A, POWER56, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
      RoHS: Compliant      		0
      • 30000:$0.4100
      • 18000:$0.4170
      • 12000:$0.4230
      • 6000:$0.4280
      • 3000:$0.4340
      • 1:$0.4390
      FDMS7602S
      DISTI # 512-FDMS7602S      		ON SemiconductorMOSFET 30V Dual N-Channel PowerTrench
      RoHS: Compliant      		2783
      • 1:$1.0800
      • 10:$0.9240
      • 100:$0.7100
      • 500:$0.6280
      • 1000:$0.4950
      • 3000:$0.4390
      • 9000:$0.4230
      FDMS7602SFairchild Semiconductor Corporation12 A, 30 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET57
      • 58:$0.9900
      • 16:$1.3200
      • 1:$1.9800
      FDMS7602S
      DISTI # 2372264      		ON SemiconductorDUAL N CHANNEL MOSFET, POWERTRENCH, 30V, 30A, POWER56, FULL REEL
      RoHS: Compliant      		0
      • 18000:£0.3860
      • 12000:£0.3890
      • 6000:£0.3930
      • 3000:£0.3990
      FDMS7602S
      DISTI # 2372264      		ON SemiconductorDUAL N CHANNEL MOSFET, POWERTRENCH, 30V, 30A, POWER56, FULL REEL
      RoHS: Compliant      		0
      • 15000:$0.6090
      • 6000:$0.6290
      • 3000:$0.6620
      FDMS7602S
      DISTI # 2009254      		ON SemiconductorDUAL N CHANNEL MOSFET, POWERTRENCH, 30V,
      RoHS: Compliant      		2690
      • 24000:$0.6180
      • 9000:$0.6370
      • 3000:$0.6620
      • 1000:$0.7460
      • 500:$0.9460
      • 100:$1.0700
      • 10:$1.3900
      • 1:$1.6300
      Imagen Parte # Descripción
      9DBL411BKLFT

      Mfr.#: 9DBL411BKLFT

      OMO.#: OMO-9DBL411BKLFT

      		 Clock Buffer LOW POWER PCIE/QPI w /POWER DOWN FEATURE
      UMK105CH181JV-F

      Mfr.#: UMK105CH181JV-F

      OMO.#: OMO-UMK105CH181JV-F

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 50V 180pF 5% C0H
      4-5177986-5

      Mfr.#: 4-5177986-5

      OMO.#: OMO-4-5177986-5

      		 Board to Board & Mezzanine Connectors 0.8FH P07H.5 120 15/Sn TR SC
      JMK107BJ475KA-T

      Mfr.#: JMK107BJ475KA-T

      OMO.#: OMO-JMK107BJ475KA-T-TAIYO-YUDEN

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT STD 0603 X5R 6.3V 4.7uF 10%
      UMK105CH181JV-F

      Mfr.#: UMK105CH181JV-F

      OMO.#: OMO-UMK105CH181JV-F-TAIYO-YUDEN

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT Midhigh 0402 C0H 50V 180pF 5%
      LTST-C191KGKT

      Mfr.#: LTST-C191KGKT

      OMO.#: OMO-LTST-C191KGKT-LITE-ON

      		 Standard LEDs - SMD Green Clear 571nm
      4-5177986-5

      Mfr.#: 4-5177986-5

      OMO.#: OMO-4-5177986-5-TE-CONNECTIVITY

      		 Board to Board & Mezzanine Connectors 0.8FH P07H.5 120 15/Sn TR SC
      9DBL411BKLFT

      Mfr.#: 9DBL411BKLFT

      OMO.#: OMO-9DBL411BKLFT-INTEGRATED-DEVICE-TECH

      		 Clock Buffer LOW POWER PCIE/QPI w /POWER DOWN FEATURE
      RK73H1ETTP4122F

      Mfr.#: RK73H1ETTP4122F

      OMO.#: OMO-RK73H1ETTP4122F-1090

      		 Thick Film Resistors - SMD 1/16watts 41.2Kohms
      RK73H1ETTP1300F

      Mfr.#: RK73H1ETTP1300F

      OMO.#: OMO-RK73H1ETTP1300F-1090

      		 Thick Film Resistors - SMD 1/16watts 130ohms 1%
      Disponibilidad
      Valores:
      Available
      En orden:
      1985
      Ingrese la cantidad:
      El precio actual de FDMS7602S es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,08 US$
      1,08 US$
      10
      0,92 US$
      9,24 US$
      100
      0,71 US$
      71,00 US$
      500
      0,63 US$
      314,00 US$
      1000
      0,50 US$
      495,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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