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AOTF11S60L

AOTF11S60L
Mfr. #:
AOTF11S60L
Fabricante:
Alpha & Omega Semiconductor Inc
Descripción:
MOSFET N-CH 600V 11A TO220F
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
AOTF11S60L Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
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ECAD Model:
Atributo del producto
Valor de atributo
Tags
AOTF11S60, AOTF11S, AOTF11, AOTF1, AOTF, AOT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F
***i-Key
MOSFET N-CH 600V 11A TO220-3F
*** Electronics
MOSFET N-CH 600V 11A TO220F
***el Electronic
DC DC CONVERTER 0.8-6V 3A
***emi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220F
***ure Electronics
Single N-Channel 600 V 36 W 52 nC Silicon Through Hole Mosfet - TO-220F
*** Stop Electro
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):320mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Package / Case:TO-220F; Power Dissipation Pd:36W; Power Dissipation Pd:36W; Pulse Current Idm:30A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy. Con-sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***th Star Micro
SuperFETTM is a new generation of high voltage MOSFETs from Fairchild with outstanding low on-resistance and low gate charge performance, a result of proprietary technology utilizing advanced charge balance mechanisms. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Product Highlights: 650V @Tj = 150C Typ. Rds(on)=0.32W Ultra low gate charge (typ. Qg=40nC) Low effective output capacitance (typ. Coss.eff=95pF) 100% avalanche tested
***emi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***ure Electronics
FCP Series 600 V 380 mOhm 36 W Through Hole N-channel SUPERFET® Mosfet - TO-220F
***r Electronics
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:11A; Resistance, Rds On:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:33A; Max Repetitive Avalanche Energy:16.7mJ; Pin Configuration:1(G), 2(D), 3(S); Power, Pd:125W; Voltage, Rds Measurement:10V; Voltage, Vds Max:650V; Voltage, Vgs Max:5V
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy. Con-sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 600V 9A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 600V, 9A, TO220F; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:29.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:27A
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220FP
*** Source Electronics
MOSFET N-CH 600V 13A TO-220FP / Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
N-Channel 600 V 285 mO 35 nC Flange Mount MDmesh™ II Power Mosfet - TO-220FP
***enic
600V 13A 30W 285m´Î@10V6.5A 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 13A I(D), 600V, 0.285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N CH, 600V, 13A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:13A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
***va Crawler
N-channel 600 V, 0.45 Ohm typ., 13.5 A SuperMESH Power MOSFET in TO-220FP package
***et
Trans MOSFET N-CH 600V 13.5A 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
STP14NK60 Series 600 V 13.5 A 0.5 Ohm N-Ch Power MOSFET - TO-220FPAB
***r Electronics
Power Field-Effect Transistor, 13.5A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 600V, 13.5A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7
***ark
Mosfet Transistor, N Channel, 14 A, 500 V, 340 Mohm, 10 V, 3.75 V Rohs Compliant: Yes
***ure Electronics
N-Channel 500 V 340 mOhm Flange Mount SuperMESH Power Mosfet - TO-220FP
***icroelectronics
N-Channel 500V - 0.30 Ohm - 14A Zener-Protected SuperMESH(TM) POWER MOSFET
***ical
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220FP Tube
***eco
MOSFET 500V 0.30 OHM 14A, TO 220 ISO FULL PACK IN LINE
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: TO-220FP Polarity: N Power dissipation: 40 W
***(Formerly Allied Electronics)
MOSFET N-Ch 500V 14A SuperMESH TO220FP
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio
***r Electronics
Power Field-Effect Transistor, 14A I(D), 500V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Parte # Mfg. Descripción Valores Precio
AOTF11S60L
DISTI # V36:1790_07841436		Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F
RoHS: Compliant		959
  • 100:$1.4007
  • 25:$1.4979
  • 10:$1.6529
  • 1:$2.0402
AOTF11S60L
DISTI # AOTF11S60L-ND		Alpha & Omega SemiconductorMOSFET N-CH 600V 11A TO220F
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$0.9425
AOTF11S60L
DISTI # 25690950		Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F
RoHS: Compliant		959
  • 8:$2.0402
Imagen Parte # Descripción
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Mfr.#: AOTF11N62

OMO.#: OMO-AOTF11N62-ALPHA-AND-OMEGA-SEMICONDUCTOR

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Mfr.#: AOTF12N50,AOTF20C60,

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Mfr.#: AOTF12N60FD_001

OMO.#: OMO-AOTF12N60FD-001-ALPHA-AND-OMEGA-SEMICONDUCTOR

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Mfr.#: AOTF15S65

OMO.#: OMO-AOTF15S65-1190

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Mfr.#: AOTF18N65 TF18N65

OMO.#: OMO-AOTF18N65-TF18N65-1190

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Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de AOTF11S60L es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,91 US$
1,91 US$
10
1,82 US$
18,19 US$
100
1,72 US$
172,30 US$
500
1,63 US$
813,65 US$
1000
1,53 US$
1 531,60 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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