S29GL01GS10DHSS30

Mfr. #:: S29GL01GS10DHSS30
Fabricante:: Cypress Semiconductor
Descripción:: NOR Flash Nor
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: S29GL01GS10DHSS30 Ficha de datos
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Más información:: S29GL01GS10DHSS30 más información S29GL01GS10DHSS30 Product Details

Atributo del producto
Valor de atributo

Fabricante:: Semiconductor de ciprés

Categoria de producto:: NOR Flash

RoHS:: Y

Estilo de montaje:: SMD / SMT

Paquete / Caja:: FBGA-64

Serie:: S29GL01G/512/256/128S

Tamaño de la memoria:: 1 Gbit

Tipo de interfaz:: Parallel

Organización:: 128 M x 8

Tipo de tiempo:: Asincrónico

Ancho del bus de datos:: 8 bit

Voltaje de suministro - Min:: 2.7 V

Voltaje de suministro - Máx:: 3.6 V

Corriente de suministro - Máx .:: 100 mA

Embalaje:: Bandeja

Tipo de memoria:: NI

Velocidad:: 100 ns

Arquitectura:: MirrorBit Eclipse

Marca:: Semiconductor de ciprés

Sensible a la humedad:: Yes

Tipo de producto:: NOR Flash

Estándar:: Common Flash Interface (CFI)

Cantidad de paquete de fábrica:: 260

Subcategoría:: Memoria y almacenamiento de datos

Nombre comercial:: MirrorBit Eclipse

Tags: S29GL01GS10DHS, S29GL01GS10D, S29GL01GS10, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

S29GL01GS10DHSS30 Descripción

***et: 1G BIT, 3V, 100NS, 64-BALL FBGA, PAGE MODE SECURE FLASH MEMO

***i-Key: IC FLASH 1GBIT PARALLEL 64FBGA

***NGYU ELECTRONICS: IC FLASH 1G PARALLEL 64BGA

***ress Semiconductor SCT: Parallel NOR Flash Memory, 128 Mbit Density, 90 ns Initial Access Time, FBGA-64, RoHS

***ure Electronics: S29GL128P Series 128 Mb (16M x 8) 3 V 90 ns Flash-NOR Memory - BGA-64

***et: NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 90ns 64-Pin Fortified BGA Tray

***ark: IC, FLASH MEM, 128MBIT, 90NS, 64-BGA; Memory Type:Flash - NOR; Memory Size:128Mbit; Memory Configuration:-; Supply Voltage Min:3V; Supply Voltage Max:3.6V; Memory Case Style:BGA; No. of Pins:64; Access Time:90ns; MSL:- ;RoHS Compliant: Yes

***ical: NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray

***ress Semiconductor SCT: Parallel NOR Flash Memory, 128 Mbit Density, 100 ns Initial Access Time, FBGA-64, RoHS

***ure Electronics: S29GL128P Series 128 Mb (16M x 8) 3 V 100 ns Flash-NOR Memory - BGA-64

***-Wing Technology: Asynchronous Active Copper Silver Tin 2012 FLASH Memory -40C~85C TA 2.7V 128Mb 110mA

***ment14 APAC: IC, MEMORY, FLASH, 128M, 3V, 64FBGA; Memory Type:Flash - NOR; Memory Size:128MB; Memory Configuration:16M x 8, 8M x 16; Interface Type:CFI; Supply Voltage Range:2.7V to 3.6V; Memory Case Style:FBGA; No. of Pins:64; Operating Temperature Range:-40°C to +85°C; Access Time:100ns; Interface:Parallel; Memory Configuration:8M x 16b; Memory Type:Flash

***ical: NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray

***ress Semiconductor SCT: Parallel NOR Flash Memory, 256 Mbit Density, 100 ns Initial Access Time, FBGA-64, RoHS

***ure Electronics: S29GL256P Series 256 Mb (32M x 8) 3 V 100 ns Flash-NOR Memory - BGA-64

***nell: MEMORY, FLASH, 256MBIT, 64FBGA; Memory Type:Flash; Memory Size:256Mbit; Memory Configuration:(Not Applicable); Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:BGA; No. of Pins:64; Access Time:100ns; IC Interface Type:(Not Applicable); Operating Temperature Min:-40°C; Operating Temperature Max:85°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2013)

S29GL01GS10DHSS30 Más información

S29 GL-S MirrorBit® Eclipse™ Flash: Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
S29GL01GS10DHSS30 DISTI # S29GL01GS10DHSS30-ND	Cypress Semiconductor	IC FLASH 1G PARALLEL 64BGA RoHS: Compliant Min Qty: 260 Container: Tray	Temporarily Out of Stock	260:$8.4500
S29GL01GS10DHSS30 DISTI # 727-S29GL01GS10DHSS3	Cypress Semiconductor	NOR Flash Nor RoHS: Compliant	0	260:$9.1400 520:$8.5500

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	Mfr.#: S29GL01GP12TFI010 OMO.#: OMO-S29GL01GP12TFI010	NOR Flash 1Gb 3V 120ns Parallel NOR Flash
	Mfr.#: S29GL01GS10FAI010 OMO.#: OMO-S29GL01GS10FAI010-CYPRESS-SEMICONDUCTOR	IC FLASH 1G PARALLEL 64BGA GL-S
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Disponibilidad

Valores:: Available
En orden:: 5500
Ingrese la cantidad:

El precio actual de S29GL01GS10DHSS30 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

260: ~~9,14 US$~~; ~~2 376,40 US$~~

520: ~~8,55 US$~~; ~~4 446,00 US$~~

1040: ~~7,85 US$~~; ~~8 164,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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S29GL01GS10DHSS30

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes