RJH60F4DPK-00#T0

RJH60F4DPK-00#T0
Mfr. #:
RJH60F4DPK-00#T0
Fabricante:
Renesas Electronics
Descripción:
IGBT Transistors IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RJH60F4DPK-00#T0 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
RJH60F4DPK-00#T0 DatasheetRJH60F4DPK-00#T0 Datasheet (P4-P6)RJH60F4DPK-00#T0 Datasheet (P7-P8)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Electrónica Renesas
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Embalaje:
Tubo
Marca:
Electrónica Renesas
Sensible a la humedad:
Yes
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1
Subcategoría:
IGBT
Tags
RJH60F4DPK, RJH60F4D, RJH60F4, RJH60F, RJH60, RJH6, RJH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 600V 50A 3-Pin TO-247A Tube
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IGBT 600V 60A 235.8W TO-3P
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60 A 600 V N-CHANNEL IGBT
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OEMs, CMs ONLY (NO BROKERS)
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Trans IGBT Chip N-CH 600V 60A 150000mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
600 V, 30 A high speed trench gate field-stop IGBT
***nell
IGBT, 600V, 60A, TO-220-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)
***p One Stop Global
Trans IGBT Chip N-CH 600V 34A 31000mW 3-Pin(3+Tab) TO-220FP Tube
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***icroelectronics
600 V, 30 A high speed trench gate field-stop IGBT
***nell
IGBT, SINGLE, 600V, 60A, TO-220FP-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 37W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (12-Jan-2017)
***p One Stop
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
600 V, 30 A high speed trench gate field-stop IGBT
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
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STMICROELECTRONICS STGW30H60DF
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600V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
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IRGP30B60KD-EP Series 600 V 30 A N-Channel UltraFast IGBT - TO-247AD
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Trans IGBT Chip N-CH 600V 60A 304000mW 3-Pin(3+Tab) TO-247AC Tube
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Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD
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Target Applications: Pump; Solar; UPS; Welding
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AUTOMOTIVE WARP2 IGBT ULTRAFAST
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Trans IGBT Chip N-CH 600V 50A 3-Pin TO-3P Tube
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IGBT 600V 50A 201.6W TO-3P
***DA Technology Co., Ltd.
Product Description Demo for Development.
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600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package, TO220-3, RoHS
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In a Pack of 5, Infineon IRG4BC40SPBF IGBT, 60 A 600 V, 3-Pin TO-220AB
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Transistor; IGBT; 600V; 60A; 160W; -55+150 deg.C; THT; TO220
***nsix Microsemi
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 380 ns Power dissipation: 160 W
***nell
IGBT, 600V, 60A, TO-220AB-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.68V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220AB; No. of Pins: 3
Imagen Parte # Descripción
RJH60F4DPQ-A0#T0

Mfr.#: RJH60F4DPQ-A0#T0

OMO.#: OMO-RJH60F4DPQ-A0-T0

IGBT Transistors IGBT
RJH60F4DPK-00#T0

Mfr.#: RJH60F4DPK-00#T0

OMO.#: OMO-RJH60F4DPK-00-T0

IGBT Transistors IGBT
RJH60F4DPK,RJH60F4

Mfr.#: RJH60F4DPK,RJH60F4

OMO.#: OMO-RJH60F4DPK-RJH60F4-1190

Nuevo y original
RJH60F4DPK,RJH60F4,

Mfr.#: RJH60F4DPK,RJH60F4,

OMO.#: OMO-RJH60F4DPK-RJH60F4--1190

Nuevo y original
RJH60F4DPK,RJH60F4,RJH60F4DPQ

Mfr.#: RJH60F4DPK,RJH60F4,RJH60F4DPQ

OMO.#: OMO-RJH60F4DPK-RJH60F4-RJH60F4DPQ-1190

Nuevo y original
RJH60F4DPQ

Mfr.#: RJH60F4DPQ

OMO.#: OMO-RJH60F4DPQ-1190

Nuevo y original
RJH60F4DPQ,RJH60F4DPK,

Mfr.#: RJH60F4DPQ,RJH60F4DPK,

OMO.#: OMO-RJH60F4DPQ-RJH60F4DPK--1190

Nuevo y original
RJH60F4DPQ-A0

Mfr.#: RJH60F4DPQ-A0

OMO.#: OMO-RJH60F4DPQ-A0-1190

Nuevo y original
RJH60F4DPQ-A0T0

Mfr.#: RJH60F4DPQ-A0T0

OMO.#: OMO-RJH60F4DPQ-A0T0-1190

Nuevo y original
RJH60F4DPQA0T0

Mfr.#: RJH60F4DPQA0T0

OMO.#: OMO-RJH60F4DPQA0T0-1190

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de RJH60F4DPK-00#T0 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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