BGA5H1BN6E6327XTSA1

Mfr. #:: BGA5H1BN6E6327XTSA1
Fabricante:: Infineon Technologies
Descripción:: IC RF AMP LTE 2.3GHZ-2.69GHZ
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: BGA5H1BN6E6327XTSA1 Ficha de datos
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Más información:: BGA5H1BN6E6327XTSA1 más información

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Tags: BGA5, BGA

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BGA5H1BN6E6327XTSA1 Descripción

***et: RF Low Noise Amp Single 2690MHz 18.3dB 6-Pin TSNP T/R

***i-Key: IC RF AMP LTE 2.3GHZ-2.69GHZ

***ark: Low Noise Amp, 18.1Db, 2.69Ghz, Tsnp-6; Frequency Min:2.3Ghz; Frequency Max:2.69Ghz; Gain:18.1Db; Noise Figure Typ:0.7Db; Rf Ic Case Style:tsnp; No. Of Pins:6Pins; Supply Voltage Min:1.5V; Supply Voltage Max:3.6V; Operating Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. LOW NOISE AMP, 18.1DB, 2.69GHZ, TSNP-6; Frequency Min:2.3GHz; Frequency Max:2.69GHz; Gain:18.1dB; Noise Figure Typ:0.7dB; RF IC Case Style:TSNP; No. of Pins:6Pins; Supply Voltage Min:1.5V; Supply Voltage Max:3.6V; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Product Range:-; Automotive Qualification Standard:-; RoHS Phthalates Compliant:Yes; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: AMP. BASSO RUMORE 18.1DB 2.69GHZ, TSNP-6; Frequenza Min:2.3GHz; Frequenza Max:2.69GHz; Guadagno:18.1dB; Figura di Rumore Tipica:0.7dB; Modello Case CI RF:TSNP; No. di Pin:6Pin; Tensione di Alimentazione Min:1.5V; Tensione di Alimentazione Max:3.6V; Temperatura di Esercizio Min:-40°C; Temperatura di Esercizio Max:85°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: The BGA5H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 2300 MHz to 2690 MHz. The LNA provides 18.1 dB gain and 0.7 dB noise figure at a current consumption of 8.5 mA. In bypass mode the LNA provides an insertion loss of 5.2 dB. | Summary of Features: Operating frequencies: 2300 - 2690 MHz; Insertion power gain: 18.1 dB; Insertion Loss in bypass mode: 5.2 dB; Low noise figure: 0.7 dB; Low current consumption: 8.5 mA; Multi-state control: bypass- and high gain-mode; Ultra small TSNP-6-2 and TSNP-6-10 leadless package; RF output internally matched to 50 Ohm; Low external component count | Target Applications: LTE

BGA5H1BN6E6327XTSA1 Más información

BGA5x1BN6 Low-noise Amplifiers: Infineon Technologies BGA5x1BN6 Amplifier product family includes +18dBm high-gain, low-noise amplifiers that cover the low (600-1000MHz) mid (1805-2200MHz), and high-band (2300-2690MHz) frequency ranges. Based on Infineon Technologies‘ B9HF Silicon Germanium technology, the BGA5x1BN6 Amplifiers operate from a 1.5V to 3.6V supply voltage and offer single-line two-state control. The amplifiers provide excellent low-noise performance and competitive insertion-loss levels. Designers can easily enable BGA5x1BN6's off-state mode by powering down the VCC. Available in an ultra-small leadless package measuring only 0.7 x 1.1mm2, the BGA5x1BN6 Amplifiers are ideal for smartphones running on the LTE or GSM network.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
BGA5H1BN6E6327XTSA1 DISTI # V72:2272_19084593	Infineon Technologies AG	BGA 5H1BN6 E6327	11568	75000:$0.2195 30000:$0.2211 15000:$0.2227 6000:$0.2243 3000:$0.2259 1000:$0.2275 500:$0.2775 250:$0.2994 100:$0.3246 50:$0.4208 25:$0.4405 10:$0.5515 1:$0.6630
BGA5H1BN6E6327XTSA1 DISTI # BGA5H1BN6E6327XTSA1TR-ND	Infineon Technologies AG	IC RF AMP LTE 2.3GHZ-2.69GHZ RoHS: Compliant Min Qty: 12000 Container: Tape & Reel (TR)	12000In Stock	24000:$0.2046 12000:$0.2104
BGA5H1BN6E6327XTSA1 DISTI # BGA5H1BN6E6327XTSA1CT-ND	Infineon Technologies AG	IC RF AMP LTE 2.3GHZ-2.69GHZ RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	12000In Stock	5000:$0.2304 1000:$0.2599 500:$0.3292 250:$0.3725 100:$0.4245 25:$0.4852 10:$0.5370 1:$0.6100
BGA5H1BN6E6327XTSA1 DISTI # BGA5H1BN6E6327XTSA1DKR-ND	Infineon Technologies AG	IC RF AMP LTE 2.3GHZ-2.69GHZ RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	12000In Stock	5000:$0.2304 1000:$0.2599 500:$0.3292 250:$0.3725 100:$0.4245 25:$0.4852 10:$0.5370 1:$0.6100
BGA5H1BN6E6327XTSA1 DISTI # 31047497	Infineon Technologies AG	BGA 5H1BN6 E6327	11568	30000:$0.2211 15000:$0.2227 6000:$0.2243 3000:$0.2259 1000:$0.2275 500:$0.2775 250:$0.2994 100:$0.3246 50:$0.4208 31:$0.4405
BGA5H1BN6E6327XTSA1 DISTI # BGA5H1BN6E6327XTSA1	Infineon Technologies AG	RF SILICON MMIC - Tape and Reel (Alt: BGA5H1BN6E6327XTSA1) RoHS: Compliant Min Qty: 12000 Container: Reel	Americas - 12000	120000:$0.2089 72000:$0.2129 48000:$0.2199 24000:$0.2289 12000:$0.2369
BGA5H1BN6E6327XTSA1 DISTI # SP001777994	Infineon Technologies AG	RF Low Noise Amp Single 2690MHz 18.3dB 6-Pin TSNP T/R (Alt: SP001777994) RoHS: Compliant Min Qty: 12000 Container: Tape and Reel	Europe - 12000	120000:€0.2409 72000:€0.2549 48000:€0.2969 24000:€0.3479 12000:€0.4049
BGA5H1BN6E6327XTSA1 DISTI # 60AC3535	Infineon Technologies AG	LOW NOISE AMP, 18.1DB, 2.69GHZ, TSNP-6,Frequency Min:2.3GHz,Frequency Max:2.69GHz,Gain:18.1dB,Noise Figure Typ:0.7dB,RF IC Case Style:TSNP,No. of Pins:6Pins,Supply Voltage Min:1.5V,Supply Voltage Max:3.6V,Operating RoHS Compliant: Yes	12000	1000:$0.2670 500:$0.2890 250:$0.3110 100:$0.3330 50:$0.3950 25:$0.4560 10:$0.5170 1:$0.6260
BGA5H1BN6E6327XTSA1 DISTI # 726-BGA5H1BN6E6327XT	Infineon Technologies AG	RF Amplifier RF SILICON MMIC RoHS: Compliant	11584	1:$0.6200 10:$0.5120 100:$0.3300 1000:$0.2640 2500:$0.2230 12000:$0.2150 24000:$0.2070
BGA5H1BN6E6327XTSA1 DISTI # 2888778	Infineon Technologies AG	LOW NOISE AMP, 18.1DB, 2.69GHZ, TSNP-6	12000	500:£0.2080 250:£0.2240 100:£0.2410 50:£0.3560 1:£0.4080
BGA5H1BN6E6327XTSA1 DISTI # XSKDRABV0047079	Infineon Technologies AG	RoHS: Compliant	36000 in Stock0 on Order	36000:$0.3227 12000:$0.3457
BGA5H1BN6E6327XTSA1 DISTI # 2888778	Infineon Technologies AG	LOW NOISE AMP, 18.1DB, 2.69GHZ, TSNP-6 RoHS: Compliant	12000	1000:$0.3920 500:$0.4970 250:$0.5620 100:$0.6400 25:$0.7320 10:$0.8090 1:$0.9200

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Parte #

Descripción

Mfr.#: BGA5H1BN6E6327XTSA1

OMO.#: OMO-BGA5H1BN6E6327XTSA1

RF Amplifier RF SILICON MMIC

Mfr.#: BGA5H1BN6E6328XTSA1

OMO.#: OMO-BGA5H1BN6E6328XTSA1-1190

Nuevo y original

Mfr.#: BGA5H1BN6E6327XTSA1

OMO.#: OMO-BGA5H1BN6E6327XTSA1-INFINEON-TECHNOLOGIES

IC RF AMP LTE 2.3GHZ-2.69GHZ

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El precio actual de BGA5H1BN6E6327XTSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

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Cantidad
Precio unitario
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1: ~~0,28 US$~~; ~~0,28 US$~~

10: ~~0,27 US$~~; ~~2,70 US$~~

100: ~~0,26 US$~~; ~~25,62 US$~~

500: ~~0,24 US$~~; ~~121,00 US$~~

1000: ~~0,23 US$~~; ~~227,80 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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BGA5H1BN6E6327XTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes