RJ1U330AAFRGTL

RJ1U330AAFRGTL
Mfr. #:
RJ1U330AAFRGTL
Fabricante:
Rohm Semiconductor
Descripción:
MOSFET Nch 250V Vds 33A 0.077Rds(on) 80Qg
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RJ1U330AAFRGTL Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
RJ1U330AAFRGTL más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
D2PAK-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
250 V
Id - Corriente de drenaje continua:
16.5 A
Rds On - Resistencia de la fuente de drenaje:
77 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
80 nC
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
211 W
Configuración:
Único
Modo de canal:
Mejora
Calificación:
AEC-Q101
Embalaje:
Carrete
Tipo de transistor:
1 N-Channel
Marca:
Semiconductor ROHM
Otoño:
140 ns
Tipo de producto:
MOSFET
Hora de levantarse:
200 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
120 ns
Tiempo típico de retardo de encendido:
50 ns
Parte # Alias:
RJ1U330AAFRG
Tags
RJ1U330AAF, RJ1U, RJ1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET N-CH 250V 33A 3-Pin TO-263 Emboss T/R
***ment14 APAC
MOSFET, N-CH, 250V, 33A, 150DEG C, 211W
***ark
Mosfet, N-Ch, 250V, 33A, 150Deg C, 211W; Transistor Polarity:n Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:250V; On Resistance Rds(On):0.077Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Rohs Compliant: Yes
AEC-Q101 Automotive MOSFETs
ROHM AEC-Q101 Automotive MOSFETs provide wide drive type and support from a small signal to high power. These MOSFETs are available in a wide range of microminiature packages and help reduce the board space. The AEC-Q101 MOSFETs are automotive supported products and are based on standard AEC-Q101. These MOSFETs offer high-speed switching and low on-resistance. The AEC-Q101 MOSFETs are available in single and dual polarities and provide a drain-source voltage ranging from -100VDSS to 100VDSS. These MOSFETs offer a drain-current ranging from -25A to 40A and RDS(on) ranging from 0.004Ω to 3Ω (typical). The AEC-Q101 MOSFETs provide total gate charge in the range of 2nC to 80nC.
Automotive Devices
ROHM Automotive Devices contribute to the evolution of the automotive sector and next-generation vehicles with their long-term and stable supply of products. ROHM's extensive lineup of devices supports the transition towards increased computerization and connectivity. ROHM focuses on safety, comfort, and ecology while providing optimum solutions to the customers' needs.
Parte # Mfg. Descripción Valores Precio
RJ1U330AAFRGTL
DISTI # RJ1U330AAFRGTLCT-ND
ROHM SemiconductorNCH 250V/33A POWER MOSFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
977In Stock
  • 500:$2.1903
  • 100:$2.5729
  • 10:$3.1400
  • 1:$3.5000
RJ1U330AAFRGTL
DISTI # RJ1U330AAFRGTLDKR-ND
ROHM SemiconductorNCH 250V/33A POWER MOSFET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
977In Stock
  • 500:$2.1903
  • 100:$2.5729
  • 10:$3.1400
  • 1:$3.5000
RJ1U330AAFRGTL
DISTI # RJ1U330AAFRGTLTR-ND
ROHM SemiconductorNCH 250V/33A POWER MOSFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$1.7934
RJ1U330AAFRGTL
DISTI # RJ1U330AAFRGTL
ROHM SemiconductorMOSFET Transistor N-Channel 250V 33A 3-Pin TO263 Emboss T/R - Tape and Reel (Alt: RJ1U330AAFRGTL)
Min Qty: 1000
Container: Reel
Americas - 0
    RJ1U330AAFRGTL
    DISTI # 82AC3034
    ROHM SemiconductorMOSFET, N-CH, 250V, 33A, 150DEG C, 211W,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power RoHS Compliant: Yes100
    • 500:$2.1400
    • 250:$2.3900
    • 100:$2.5100
    • 50:$2.6500
    • 25:$2.7800
    • 10:$2.9100
    • 1:$3.4200
    RJ1U330AAFRGTL
    DISTI # 755-RJ1U330AAFRGTL
    ROHM SemiconductorMOSFET Nch 250V Vds 33A 0.077Rds(on) 80Qg
    RoHS: Compliant
    994
    • 1:$3.3900
    • 10:$2.8800
    • 100:$2.4900
    • 250:$2.3700
    • 500:$2.1200
    • 1000:$1.7900
    RJ1U330AAFRGTL
    DISTI # 2965339
    ROHM SemiconductorMOSFET, N-CH, 250V, 33A, 150DEG C, 211W100
    • 500:£1.5400
    • 250:£1.7200
    • 100:£1.8000
    • 10:£2.0900
    • 1:£2.7600
    RJ1U330AAFRGTLROHM SemiconductorMOSFET Nch 250V Vds 33A 0.077Rds(on) 80Qg
    RoHS: Compliant
    Americas -
      RJ1U330AAFRGTL
      DISTI # 2965339
      ROHM SemiconductorMOSFET, N-CH, 250V, 33A, 150DEG C, 211W
      RoHS: Compliant
      100
      • 500:$2.1900
      • 250:$2.3400
      • 100:$2.5700
      • 10:$2.8700
      • 1:$3.2200
      Imagen Parte # Descripción
      FZT857TA

      Mfr.#: FZT857TA

      OMO.#: OMO-FZT857TA

      Bipolar Transistors - BJT NPN High Voltage
      FZT857TA

      Mfr.#: FZT857TA

      OMO.#: OMO-FZT857TA-DIODES

      Bipolar Transistors - BJT NPN High Voltage
      Disponibilidad
      Valores:
      994
      En orden:
      2977
      Ingrese la cantidad:
      El precio actual de RJ1U330AAFRGTL es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      3,39 US$
      3,39 US$
      10
      2,88 US$
      28,80 US$
      100
      2,49 US$
      249,00 US$
      250
      2,37 US$
      592,50 US$
      500
      2,12 US$
      1 060,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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