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IPB090N06N3GATMA1

IPB090N06N3GATMA1
Mfr. #:
IPB090N06N3GATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET MV POWER MOS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB090N06N3GATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Configuración:
Único
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
4.4 mm
Longitud:
10 mm
Tipo de transistor:
1 N-Channel
Ancho:
9.25 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Subcategoría:
MOSFET
Parte # Alias:
G IPB090N06N3 IPB9N6N3GXT SP000398042
Unidad de peso:
0.139332 oz
Tags
IPB090, IPB09, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 9 mOhm 36 nC OptiMOS™ Power Mosfet - D2PAK
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO263-3, RoHS
***ment14 APAC
MOSFET, N CH, 50A, 60V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:71W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:71W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
Parte # Mfg. Descripción Valores Precio
IPB090N06N3GATMA1
DISTI # V72:2272_06384657		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		473
  • 250:$0.7398
  • 100:$0.7473
  • 25:$0.9646
  • 10:$1.0716
  • 1:$1.2131
IPB090N06N3GATMA1
DISTI # V36:1790_06384657		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$0.3640
  • 500000:$0.3644
  • 100000:$0.4040
  • 10000:$0.4793
  • 1000:$0.4922
IPB090N06N3GATMA1
DISTI # IPB090N06N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		860In Stock
  • 500:$0.6422
  • 100:$0.7773
  • 10:$0.9970
  • 1:$1.1200
IPB090N06N3GATMA1
DISTI # IPB090N06N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		860In Stock
  • 500:$0.6422
  • 100:$0.7773
  • 10:$0.9970
  • 1:$1.1200
IPB090N06N3GATMA1
DISTI # IPB090N06N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 10000:$0.4200
  • 5000:$0.4364
  • 2000:$0.4594
  • 1000:$0.4922
IPB090N06N3GATMA1
DISTI # 27089772		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		473
  • 21:$1.2131
IPB090N06N3GATMA1
DISTI # SP000398042		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin TO-263 T/R (Alt: SP000398042)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 22800
  • 10000:€0.3159
  • 6000:€0.3409
  • 4000:€0.3689
  • 2000:€0.4029
  • 1000:€0.4919
IPB090N06N3GXT
DISTI # IPB090N06N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB090N06N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.3169
  • 6000:$0.3229
  • 4000:$0.3339
  • 2000:$0.3469
  • 1000:$0.3599
IPB090N06N3 G
DISTI # 726-IPB090N06N3G		Infineon Technologies AGMOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
RoHS: Compliant		1019
  • 1:$1.0200
  • 10:$0.8750
  • 100:$0.6720
  • 500:$0.5940
  • 1000:$0.4690
  • 2000:$0.4160
  • 10000:$0.4010
IPB090N06N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		2000
  • 1000:$0.3200
  • 500:$0.3300
  • 100:$0.3500
  • 25:$0.3600
  • 1:$0.3900
IPB090N06N3GATMA1
DISTI # 8269529P		Infineon Technologies AGMOSFET N-CH 50A 60V OPTIMOS3 TO263, RL775
  • 1000:£0.3370
  • 500:£0.4250
  • 250:£0.4810
  • 50:£0.5540
IPB090N06N3GATMA1
DISTI # IPB090N06N3GATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,50A,71W,PG-TO263-341
  • 1000:$0.4257
  • 100:$0.4572
  • 10:$0.5270
  • 3:$0.6553
  • 1:$0.7615
IPB090N06N3GATMA1
DISTI # 1775550		Infineon Technologies AGMOSFET, N CH, 50A, 60V, PG-TO263-31790
  • 500:£0.4680
  • 250:£0.5360
  • 100:£0.6030
  • 25:£0.7630
  • 5:£0.9400
Imagen Parte # Descripción
IPB090N06N3 G

Mfr.#: IPB090N06N3 G

OMO.#: OMO-IPB090N06N3-G

 MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
IPB090N06N3GATMA1

Mfr.#: IPB090N06N3GATMA1

OMO.#: OMO-IPB090N06N3GATMA1

 MOSFET MV POWER MOS
IPB090N06N3 G

Mfr.#: IPB090N06N3 G

OMO.#: OMO-IPB090N06N3-G-1190

 IPB090N06N3 G
IPB090N06N3G

Mfr.#: IPB090N06N3G

OMO.#: OMO-IPB090N06N3G-1190

 Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IPB090N06N3GATMA1

Mfr.#: IPB090N06N3GATMA1

OMO.#: OMO-IPB090N06N3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 50A TO263-3
IPB090N06N3GATMA1 , 2SD1

Mfr.#: IPB090N06N3GATMA1 , 2SD1

OMO.#: OMO-IPB090N06N3GATMA1-2SD1-1190

 Nuevo y original
IPB090N06N3GS

Mfr.#: IPB090N06N3GS

OMO.#: OMO-IPB090N06N3GS-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de IPB090N06N3GATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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