BSZ16DN25NS3GATMA1

BSZ16DN25NS3GATMA1
Mfr. #:
BSZ16DN25NS3GATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 250V 10.9A 8TSDSON
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSZ16DN25NS3GATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
BSZ16D, BSZ16, BSZ1, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 250 V 165 mOhm 8.6 nC OptiMOS™ Power Mosfet - TSDSON-8
***ical
Trans MOSFET N-CH 250V 10.9A Automotive 8-Pin TSDSON EP T/R
***et Europe
Trans MOSFET N-CH 250V 10.9A 8-Pin TSDSON T/R
***p One Stop Japan
Trans MOSFET N-CH 250V 10.9A 8-Pin TSDSON EP
***i-Key
MOSFET N-CH 250V 10.9A 8TDSON
***ronik
N-CH 250V 10,9A 165mOhm TSDSON8
***ark
TRENCH >=100V
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 250V, 10.9A, TSDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:10.9A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.146ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:62.5W; Transistor Case Style:TSDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 3 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 250V, 10,9A, TSDSON; Polarità Transistor:Canale N; Corrente Continua di Drain Id:10.9A; Tensione Drain Source Vds:250V; Resistenza di Attivazione Rds(on):0.146ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:62.5W; Modello Case Transistor:TSDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS 3 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineon's 250V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS comliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest Power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Parte # Mfg. Descripción Valores Precio
BSZ16DN25NS3GATMA1
DISTI # V36:1790_06383962
Infineon Technologies AGTrans MOSFET N-CH 250V 10.9A 8-Pin TSDSON EP T/R
RoHS: Compliant
5000
  • 5000000:$0.7905
  • 2500000:$0.7909
  • 500000:$0.8333
  • 50000:$0.9128
  • 5000:$0.9263
BSZ16DN25NS3GATMA1
DISTI # V72:2272_06383962
Infineon Technologies AGTrans MOSFET N-CH 250V 10.9A 8-Pin TSDSON EP T/R
RoHS: Compliant
0
    BSZ16DN25NS3GATMA1
    DISTI # BSZ16DN25NS3GATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 250V 10.9A 8TSDSON
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    8840In Stock
    • 1000:$0.8868
    • 500:$1.0703
    • 100:$1.3027
    • 10:$1.6210
    • 1:$1.8000
    BSZ16DN25NS3GATMA1
    DISTI # BSZ16DN25NS3GATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 250V 10.9A 8TSDSON
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    8840In Stock
    • 1000:$0.8868
    • 500:$1.0703
    • 100:$1.3027
    • 10:$1.6210
    • 1:$1.8000
    BSZ16DN25NS3GATMA1
    DISTI # BSZ16DN25NS3GATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 250V 10.9A 8TSDSON
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape & Reel (TR)
    5000In Stock
    • 10000:$0.7521
    • 5000:$0.7719
    BSZ16DN25NS3GATMA1
    DISTI # BSZ16DN25NS3GATMA1
    Infineon Technologies AGTrans MOSFET N-CH 250V 10.9A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ16DN25NS3GATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 50000:$0.7179
    • 30000:$0.7309
    • 20000:$0.7569
    • 10000:$0.7849
    • 5000:$0.8139
    BSZ16DN25NS3GATMA1
    DISTI # SP000781800
    Infineon Technologies AGTrans MOSFET N-CH 250V 10.9A 8-Pin TSDSON T/R (Alt: SP000781800)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel
    Europe - 0
    • 50000:€0.6589
    • 30000:€0.7089
    • 20000:€0.7689
    • 10000:€0.8379
    • 5000:€1.0249
    BSZ16DN25NS3GATMA1
    DISTI # 13AC8356
    Infineon Technologies AGMOSFET, N-CH, 250V, 10.9A, TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:10.9A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.146ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes0
    • 1000:$0.8280
    • 500:$1.0000
    • 250:$1.0700
    • 100:$1.1400
    • 50:$1.2400
    • 25:$1.3300
    • 10:$1.4200
    • 1:$1.6800
    BSZ16DN25NS3GATMA1
    DISTI # 726-BSZ16DN25NS3GATM
    Infineon Technologies AGMOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
    RoHS: Compliant
    9950
    • 1:$1.6600
    • 10:$1.4100
    • 100:$1.1300
    • 500:$0.9900
    • 1000:$0.8200
    • 2500:$0.7640
    • 5000:$0.7360
    • 10000:$0.7070
    BSZ16DN25NS3 G
    DISTI # 726-BSZ16DN25NS3G
    Infineon Technologies AGMOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
    RoHS: Compliant
    4900
    • 1:$1.6600
    • 10:$1.4100
    • 100:$1.1300
    • 500:$0.9900
    • 1000:$0.8200
    • 2500:$0.7640
    • 5000:$0.7360
    BSZ16DN25NS3GATMA1
    DISTI # 2725827
    Infineon Technologies AGMOSFET, N-CH, 250V, 10.9A, TSDSON
    RoHS: Compliant
    5000
    • 1000:$1.4200
    • 500:$1.7200
    • 100:$2.2100
    • 10:$2.7500
    • 1:$3.0400
    BSZ16DN25NS3GATMA1
    DISTI # 2725827
    Infineon Technologies AGMOSFET, N-CH, 250V, 10.9A, TSDSON4985
    • 100:£1.0900
    • 10:£1.4100
    • 1:£1.8200
    Imagen Parte # Descripción
    BSZ16DN25NS3 G

    Mfr.#: BSZ16DN25NS3 G

    OMO.#: OMO-BSZ16DN25NS3-G

    MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
    BSZ16DN25NS3GATMA1

    Mfr.#: BSZ16DN25NS3GATMA1

    OMO.#: OMO-BSZ16DN25NS3GATMA1

    MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
    BSZ16DN25NS3 G

    Mfr.#: BSZ16DN25NS3 G

    OMO.#: OMO-BSZ16DN25NS3-G-1190

    MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
    BSZ16DN25NS3 G(SP0007818

    Mfr.#: BSZ16DN25NS3 G(SP0007818

    OMO.#: OMO-BSZ16DN25NS3-G-SP0007818-1190

    Nuevo y original
    BSZ16DN25NS3G

    Mfr.#: BSZ16DN25NS3G

    OMO.#: OMO-BSZ16DN25NS3G-1190

    Nuevo y original
    BSZ16DN25NS3GATMA1

    Mfr.#: BSZ16DN25NS3GATMA1

    OMO.#: OMO-BSZ16DN25NS3GATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 250V 10.9A 8TSDSON
    Disponibilidad
    Valores:
    Available
    En orden:
    5000
    Ingrese la cantidad:
    El precio actual de BSZ16DN25NS3GATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,06 US$
    1,06 US$
    10
    1,01 US$
    10,08 US$
    100
    0,95 US$
    95,45 US$
    500
    0,90 US$
    450,70 US$
    1000
    0,85 US$
    848,40 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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