NSBA123EDXV6T1G

NSBA123EDXV6T1G
Mfr. #:
NSBA123EDXV6T1G
Fabricante:
ON Semiconductor
Descripción:
Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NSBA123EDXV6T1G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSBA123EDXV6T1G DatasheetNSBA123EDXV6T1G Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - Pre-polarizados
RoHS:
Y
Configuración:
Doble
Polaridad del transistor:
PNP
Resistencia de entrada típica:
2.2 kOhms
Relación de resistencia típica:
1
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-563-6
Colector de CC / Ganancia base hfe Min:
8
Voltaje colector-emisor VCEO Max:
50 V
Corriente continua del colector:
- 0.1 A
Corriente máxima del colector de CC:
100 mA
Pd - Disipación de energía:
357 mW
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
NSBA123EDXV6
Embalaje:
Carrete
Ganancia de corriente CC hFE Max:
8
Altura:
0.55 mm
Longitud:
1.6 mm
Ancho:
1.2 mm
Marca:
EN Semiconductor
Tipo de producto:
BJTs - Transistores bipolares - Pre-polarizados
Cantidad de paquete de fábrica:
4000
Subcategoría:
Transistores
Unidad de peso:
0.000106 oz
Tags
NSBA123E, NSBA123, NSBA12, NSBA1, NSBA, NSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
***emi
50V Dual PNP Bipolar Digital Transistor
***ical
Trans Digital BJT PNP 50V 100mA 500mW 6-Pin SOT-563 T/R
***ponent Stockers
100 mA 50 V 2 CHANNEL PNP Si SMALL SIGNAL TRANSISTOR
***ark
Brt Transistor, 50V, 2.2K/2.2K, Sot-563; Digital Transistor Polarity:dual Pnp; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:2.2Kohm; Base-Emitter Resistor R2:2.2Kohm Rohs Compliant: Yes
Parte # Mfg. Descripción Valores Precio
NSBA123EDXV6T1G
DISTI # 26621077
ON SemiconductorTrans Digital BJT PNP 50V 100mA Automotive 6-Pin SOT-563 T/R
RoHS: Compliant
32000
  • 8000:$0.1260
NSBA123EDXV6T1G
DISTI # NSBA123EDXV6T1GOS-ND
ON SemiconductorTRANS 2PNP PREBIAS 0.5W SOT563
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
Limited Supply - Call
    NSBA123EDXV6T1G
    DISTI # V36:1790_07278063
    ON SemiconductorTrans Digital BJT PNP 50V 100mA Automotive 6-Pin SOT-563 T/R
    RoHS: Compliant
    0
    • 8000000:$0.0727
    • 4000000:$0.0730
    • 800000:$0.0909
    • 80000:$0.1210
    • 8000:$0.1260
    NSBA123EDXV6T1G
    DISTI # NSBA123EDXV6T1G
    ON SemiconductorTrans Digital BJT PNP 50V 0.1A 6-Pin SOT-563 T/R - Tape and Reel (Alt: NSBA123EDXV6T1G)
    RoHS: Compliant
    Min Qty: 8000
    Container: Reel
    Americas - 0
    • 80000:$0.0739
    • 40000:$0.0749
    • 24000:$0.0759
    • 16000:$0.0769
    • 8000:$0.0779
    NSBA123EDXV6T1G
    DISTI # 49X8922
    ON SemiconductorBRT TRANSISTOR, 50V, 2.2K/2.2K, SOT-563,Digital Transistor Polarity:Dual PNP,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:2.2kohm,Base-Emitter Resistor R2:2.2kohm RoHS Compliant: Yes0
    • 2500:$0.1070
    • 1000:$0.1260
    • 500:$0.1550
    • 250:$0.1820
    • 100:$0.2160
    • 50:$0.2580
    • 25:$0.3090
    • 1:$0.4030
    NSBA123EDXV6T1G
    DISTI # 42K2303
    ON SemiconductorBRT TRANSISTOR, 50V, 2.2K/2.2K, SOT-563,Digital Transistor Polarity:Dual PNP,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:2.2kohm,Base-Emitter Resistor R2:2.2kohm RoHS Compliant: Yes0
    • 30000:$0.0780
    • 18000:$0.0860
    • 12000:$0.0930
    • 6000:$0.1040
    • 3000:$0.1190
    • 1:$0.1260
    NSBA123EDXV6T1G
    DISTI # 863-NSBA123EDXV6T1G
    ON SemiconductorBipolar Transistors - Pre-Biased 100mA 50V Dual PNP
    RoHS: Compliant
    7960
    • 1:$0.3500
    • 10:$0.2660
    • 100:$0.1440
    • 1000:$0.1080
    • 4000:$0.0930
    • 8000:$0.0870
    • 24000:$0.0800
    • 48000:$0.0770
    • 100000:$0.0740
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    Disponibilidad
    Valores:
    Available
    En orden:
    1990
    Ingrese la cantidad:
    El precio actual de NSBA123EDXV6T1G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,35 US$
    0,35 US$
    10
    0,27 US$
    2,66 US$
    100
    0,14 US$
    14,40 US$
    1000
    0,11 US$
    108,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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