SIDR140DP-T1-GE3

SIDR140DP-T1-GE3
Mfr. #:
SIDR140DP-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 25V Vds 20/-16V Vgs PowerPAK SO-8DC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIDR140DP-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIDR140DP-T1-GE3 DatasheetSIDR140DP-T1-GE3 Datasheet (P4-P6)SIDR140DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Más información:
SIDR140DP-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-SO-8DC-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
25 V
Id - Corriente de drenaje continua:
100 A
Rds On - Resistencia de la fuente de drenaje:
670 uOhms
Vgs th - Voltaje umbral puerta-fuente:
1 V
Vgs - Voltaje puerta-fuente:
20 V, - 16 V
Qg - Carga de puerta:
170 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
125 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SID
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
90 S
Otoño:
9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
9 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
46 ns
Tiempo típico de retardo de encendido:
19 ns
Tags
SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Parte # Mfg. Descripción Valores Precio
SIDR140DP-T1-GE3
DISTI # V99:2348_22587800
Vishay IntertechnologiesN-Channel 25 V (D-S) MOSFET PowerPAK SO-8 double cooling 1G SG 2mil , 0.67 m @ 10V m @ 7.5V 0.9 m @5990
  • 3000:$1.0786
  • 500:$1.3860
  • 100:$1.5526
  • 10:$2.0366
  • 1:$2.6928
SIDR140DP-T1-GE3
DISTI # SIDR140DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CHAN 25V PPAK SO-8DC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
18In Stock
  • 1000:$1.2491
  • 500:$1.5075
  • 100:$1.8348
  • 10:$2.2830
  • 1:$2.5400
SIDR140DP-T1-GE3
DISTI # SIDR140DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CHAN 25V PPAK SO-8DC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
18In Stock
  • 1000:$1.2491
  • 500:$1.5075
  • 100:$1.8348
  • 10:$2.2830
  • 1:$2.5400
SIDR140DP-T1-GE3
DISTI # SIDR140DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CHAN 25V PPAK SO-8DC
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 6000:$1.1151
  • 3000:$1.1290
SIDR140DP-T1-GE3
DISTI # 31059629
Vishay IntertechnologiesN-Channel 25 V (D-S) MOSFET PowerPAK SO-8 double cooling 1G SG 2mil , 0.67 m @ 10V m @ 7.5V 0.9 m @5990
  • 3000:$1.1019
  • 500:$1.3471
  • 100:$1.5523
  • 10:$2.0165
  • 6:$2.6929
SIDR140DP-T1-GE3
DISTI # SIDR140DP-T1-GE3
Vishay IntertechnologiesN-CHANNEL 25-V (D-S) MOSFET - Tape and Reel (Alt: SIDR140DP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$1.0209
  • 30000:$1.0489
  • 18000:$1.0789
  • 12000:$1.1249
  • 6000:$1.1589
SIDR140DP-T1-GE3
DISTI # 81AC3428
Vishay IntertechnologiesN-CHANNEL 25-V (D-S) MOSFET0
  • 10000:$0.9960
  • 6000:$1.0400
  • 4000:$1.0800
  • 2000:$1.2000
  • 1000:$1.2600
  • 1:$1.3400
SIDR140DP-T1-GE3
DISTI # 99AC9550
Vishay IntertechnologiesMOSFET, N-CH, 100A, 25V, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.00054ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.1V,Power RoHS Compliant: Yes50
  • 500:$1.4000
  • 250:$1.5000
  • 100:$1.6100
  • 50:$1.7600
  • 25:$1.9200
  • 10:$2.0700
  • 1:$2.4900
SIDR140DP-T1-GE3
DISTI # 78-SIDR140DP-T1-GE3
Vishay IntertechnologiesMOSFET 25V Vds 20/-16V Vgs PowerPAK SO-8DC
RoHS: Compliant
5477
  • 1:$2.4700
  • 10:$2.0500
  • 100:$1.5900
  • 500:$1.3900
  • 1000:$1.1500
  • 3000:$1.0700
  • 6000:$1.0300
SIDR140DP-T1-GE3
DISTI # 3019067
Vishay IntertechnologiesMOSFET, N-CH, 100A, 25V, POWERPAK SO
RoHS: Compliant
50
  • 1000:$1.4900
  • 500:$1.6100
  • 250:$1.7800
  • 100:$1.9100
  • 10:$2.4000
  • 1:$3.1100
SIDR140DP-T1-GE3
DISTI # 3019067
Vishay IntertechnologiesMOSFET, N-CH, 100A, 25V, POWERPAK SO50
  • 500:£0.9960
  • 250:£1.1000
  • 100:£1.1800
  • 10:£1.4900
  • 1:£1.9300
Imagen Parte # Descripción
DGD0506AFN-7

Mfr.#: DGD0506AFN-7

OMO.#: OMO-DGD0506AFN-7

Gate Drivers HV Gate Driver
MMBD1404

Mfr.#: MMBD1404

OMO.#: OMO-MMBD1404

Diodes - General Purpose, Power, Switching High Voltage General Purpose
SIDR680DP-T1-GE3

Mfr.#: SIDR680DP-T1-GE3

OMO.#: OMO-SIDR680DP-T1-GE3

MOSFET 80V Vds 20V Vgs PowerPAK SO-8DC
SIDR626DP-T1-GE3

Mfr.#: SIDR626DP-T1-GE3

OMO.#: OMO-SIDR626DP-T1-GE3

MOSFET 60V Vds 20V Vgs PowerPAK SO-8DC
RSS100N03FRATB

Mfr.#: RSS100N03FRATB

OMO.#: OMO-RSS100N03FRATB

MOSFET Nch 30V Vds 10A 0.0135Rds(on) 14Qg
FDMS8050ET30

Mfr.#: FDMS8050ET30

OMO.#: OMO-FDMS8050ET30

MOSFET FET 30V 0.65 MOHM PQFN56
PIC16F15344-E/GZ

Mfr.#: PIC16F15344-E/GZ

OMO.#: OMO-PIC16F15344-E-GZ

8-bit Microcontrollers - MCU 7KB, 512B RAM, 4xPWMs, Comparator, DAC, ADC, CWG, 2 EUSART, SPI/I2C
SIRA90DP-T1-GE3

Mfr.#: SIRA90DP-T1-GE3

OMO.#: OMO-SIRA90DP-T1-GE3

MOSFET 30V Vds 100A Id Qg 48nC Typ.
SIDR626DP-T1-GE3

Mfr.#: SIDR626DP-T1-GE3

OMO.#: OMO-SIDR626DP-T1-GE3-VISHAY

MOSFET N-CHAN 60V
SIDR680DP-T1-GE3

Mfr.#: SIDR680DP-T1-GE3

OMO.#: OMO-SIDR680DP-T1-GE3-VISHAY

MOSFET N-CH 80V
Disponibilidad
Valores:
Available
En orden:
1988
Ingrese la cantidad:
El precio actual de SIDR140DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,47 US$
2,47 US$
10
2,05 US$
20,50 US$
100
1,59 US$
159,00 US$
500
1,39 US$
695,00 US$
1000
1,15 US$
1 150,00 US$
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