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SISH112DN-T1-GE3

SISH112DN-T1-GE3
Mfr. #:
SISH112DN-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 30V Vds 12V Vgs PowerPAK 1212-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SISH112DN-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SISH112DN-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-1212-8SH
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
17.8 A
Rds On - Resistencia de la fuente de drenaje:
7.5 mOhms
Vgs th - Voltaje umbral puerta-fuente:
600 mV
Vgs - Voltaje puerta-fuente:
12 V
Qg - Carga de puerta:
27 nC
Temperatura mínima de funcionamiento:
- 50 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
3.8 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET, PowerPAK
Embalaje:
Carrete
Serie:
SIS
Tipo de transistor:
1 N-Channel TrenchFET Power MOSFET
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
97 S
Otoño:
10 ns
Tipo de producto:
MOSFET
Hora de levantarse:
10 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
65 ns
Tiempo típico de retardo de encendido:
10 ns
Tags
SISH11, SISH1, SISH, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descripción Valores Precio
SISH112DN-T1-GE3
DISTI # V99:2348_22712067		Vishay IntertechnologiesN-Channel 30 V (D-S) Fast Switching MOSFET PowerPAK 1212-8SH 300M , 7.5 m @ 10V m @ 7.5V 8.2 m @ 4.56000
  • 3000:$0.5823
  • 1000:$0.6228
  • 500:$0.7961
  • 100:$0.9453
  • 10:$1.2084
  • 1:$1.6317
SISH112DN-T1-GE3
DISTI # SISH112DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V PPAK 1212-8SH
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6050In Stock
  • 1000:$0.6976
  • 500:$0.8836
  • 100:$1.0696
  • 10:$1.3720
  • 1:$1.5300
SISH112DN-T1-GE3
DISTI # SISH112DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V PPAK 1212-8SH
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6050In Stock
  • 1000:$0.6976
  • 500:$0.8836
  • 100:$1.0696
  • 10:$1.3720
  • 1:$1.5300
SISH112DN-T1-GE3
DISTI # SISH112DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 1212-8 PPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 15000:$0.5779
  • 6000:$0.6005
  • 3000:$0.6321
SISH112DN-T1-GE3
DISTI # 31579471		Vishay IntertechnologiesN-Channel 30 V (D-S) Fast Switching MOSFET PowerPAK 1212-8SH 300M , 7.5 m @ 10V m @ 7.5V 8.2 m @ 4.56000
  • 3000:$0.5823
  • 1000:$0.6228
  • 500:$0.7961
  • 100:$0.9453
  • 11:$1.2084
SISH112DN-T1-GE3
DISTI # SISH112DN-T1-GE3		Vishay IntertechnologiesN-CH 30-V (D-S) FAST SWITCHING MOSFE - Tape and Reel (Alt: SISH112DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.5509
  • 30000:$0.5659
  • 18000:$0.5819
  • 12000:$0.6069
  • 6000:$0.6249
SISH112DN-T1-GE3
DISTI # 81AC3493		Vishay IntertechnologiesN-CH 30-V (D-S) FAST SWITCHING MOSFE0
  • 10000:$0.5470
  • 6000:$0.5590
  • 4000:$0.5810
  • 2000:$0.6450
  • 1000:$0.7100
  • 1:$0.7400
SISH112DN-T1-GE3
DISTI # 99AC9582		Vishay IntertechnologiesMOSFET, N-CH, 30V, 11.3A, 150DEG C, 1.5W,Transistor Polarity:N Channel,Continuous Drain Current Id:11.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,PowerRoHS Compliant: Yes50
  • 500:$0.8260
  • 250:$0.8930
  • 100:$0.9610
  • 50:$1.0500
  • 25:$1.1500
  • 10:$1.2400
  • 1:$1.5200
SISH112DN-T1-GE3
DISTI # 78-SISH112DN-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 12V Vgs PowerPAK 1212-8
RoHS: Compliant		5944
  • 1:$1.5000
  • 10:$1.2300
  • 100:$0.9500
  • 500:$0.8170
  • 1000:$0.6440
  • 3000:$0.6010
  • 6000:$0.5710
  • 9000:$0.5500
SISH112DN-T1-GE3
DISTI # 3019128		Vishay IntertechnologiesMOSFET, N-CH, 30V, 11.3A, 150DEG C, 1.5W
RoHS: Compliant		50
  • 5000:$0.9140
  • 1000:$0.9200
  • 500:$1.1400
  • 250:$1.2500
  • 100:$1.3600
  • 25:$1.7400
  • 5:$1.9100
SISH112DN-T1-GE3
DISTI # 3019128		Vishay IntertechnologiesMOSFET, N-CH, 30V, 11.3A, 150DEG C, 1.5W50
  • 500:£0.5930
  • 250:£0.6420
  • 100:£0.6900
  • 10:£0.9380
  • 1:£1.2400
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RC0402FR-07100KL

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 Thick Film Resistors - SMD 100K OHM 1%
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 High Power LEDs - Single Color Green 520nm-540nm
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Disponibilidad
Valores:
Available
En orden:
1988
Ingrese la cantidad:
El precio actual de SISH112DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,50 US$
1,50 US$
10
1,23 US$
12,30 US$
100
0,95 US$
95,00 US$
500
0,82 US$
408,50 US$
1000
0,64 US$
644,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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