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SIHB6N65E-GE3

SIHB6N65E-GE3
Mfr. #:
SIHB6N65E-GE3
Fabricante:
Vishay
Descripción:
IGBT Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHB6N65E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 700 V 0.6 O 48 nC Surface Mount Power Mosfet - TO-263 (D2PAK)
***ical
Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) D2PAK
***et Europe
Trans MOSFET N-CH 650V 7A 3-Pin D2PAK
***i-Key
MOSFET N-CH 650V 7A D2PAK
***ark
N-CHANNEL 650V
***nell
MOSFET, N-CH, 650V, 7A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 7A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:78W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C
Parte # Mfg. Descripción Valores Precio
SIHB6N65E-GE3
DISTI # SIHB6N65E-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 7A D2PAK
Min Qty: 1
Container: Tube		998In Stock
  • 5000:$0.8246
  • 2500:$0.8370
  • 500:$1.0850
  • 100:$1.3206
  • 25:$1.5500
  • 10:$1.6430
  • 1:$1.8300
SIHB6N65E-GE3
DISTI # SIHB6N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 7A 3-Pin D2PAK - Tape and Reel (Alt: SIHB6N65E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.7939
  • 6000:$0.8159
  • 4000:$0.8399
  • 2000:$0.8749
  • 1000:$0.9019
SIHB6N65E-GE3
DISTI # SIHB6N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 7A 3-Pin D2PAK (Alt: SIHB6N65E-GE3)
Min Qty: 50		Europe - 0
  • 500:€0.7329
  • 300:€0.7659
  • 200:€0.8669
  • 100:€1.0689
  • 50:€1.4899
SIHB6N65E-GE3
DISTI # 19X1932		Vishay IntertechnologiesPower MOSFET, N Channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V RoHS Compliant: Yes
RoHS: Compliant		65
  • 2500:$0.8370
  • 1000:$0.8980
  • 500:$1.0800
  • 100:$1.2400
  • 50:$1.3600
  • 25:$1.4800
  • 10:$1.6000
  • 1:$1.9200
SIHB6N65E-GE3
DISTI # 78-SIHB6N65E-GE3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		1183
  • 1:$1.9200
  • 10:$1.6000
  • 100:$1.2400
  • 500:$1.0800
  • 1000:$0.8980
  • 2000:$0.8370
  • 5000:$0.8060
  • 10000:$0.7750
SIHB6N65E-GE3
DISTI # 2364073		Vishay IntertechnologiesMOSFET, N-CH, 650V, 7A, TO-26365
  • 500:£0.8240
  • 250:£0.8840
  • 100:£0.9440
  • 10:£1.2500
  • 1:£1.6700
SIHB6N65E-GE3
DISTI # 2364073		Vishay IntertechnologiesMOSFET, N-CH, 650V, 7A, TO-263
RoHS: Compliant		65
  • 500:$1.6300
  • 100:$1.8700
  • 10:$2.4100
  • 1:$2.8900
Imagen Parte # Descripción
SIHB6N65E-GE3

Mfr.#: SIHB6N65E-GE3

OMO.#: OMO-SIHB6N65E-GE3-VISHAY

 IGBT Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
SIHB6N65ET1-GE3

Mfr.#: SIHB6N65ET1-GE3

OMO.#: OMO-SIHB6N65ET1-GE3-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de SIHB6N65E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,19 US$
1,19 US$
10
1,13 US$
11,31 US$
100
1,07 US$
107,18 US$
500
1,01 US$
506,10 US$
1000
0,95 US$
952,70 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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