FDMC15N06

FDMC15N06
Mfr. #:
FDMC15N06
Fabricante:
ON Semiconductor
Descripción:
IGBT Transistors MOSFET UltraFET 55V, 15A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDMC15N06 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
FAIRCHILD
categoria de producto
FET - Single
RoHS
Detalles
Estilo de montaje
SMD / SMT
Paquete / Estuche
MLP-6
número de canales
1 Channel
Polaridad del transistor
Canal N
Vds - Voltaje de ruptura de drenaje-fuente
55 V
Id - Corriente de drenaje continua
15 A
Rds On - Resistencia de la fuente de drenaje
75 mOhms
Temperatura máxima de funcionamiento
+ 150 C
Tecnología
Si
embalaje
Carrete
Marca
Fairchild Semiconductor
Configuración
Único
Otoño
22 ns
Transconductancia directa - Mín.
5 S
Temperatura mínima de funcionamiento
- 55 C
Pd - Disipación de energía
35 W
Hora de levantarse
36.5 ns
Tipo de transistor
1 N-Channel
Tiempo de retardo de apagado típico
22.5 ns
Tiempo de retardo de encendido típico
9.5 ns
Unidad de peso
0.007055 oz
Tags
FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel UltraFET Power MOSFET 55V, 15A, 90mΩ
***et Europe
Trans MOSFET N-CH 55V 2.4A 8-Pin Power 33 T/R
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UItraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Parte # Mfg. Descripción Valores Precio
FDMC15N06
DISTI # 26637152
ON SemiconductorFET 55V 90.0 MOHM MLP336000
  • 3000:$0.5711
FDMC15N06
DISTI # FDMC15N06CT-ND
ON SemiconductorMOSFET N-CH 55V 2.4A MLP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    FDMC15N06
    DISTI # FDMC15N06DKR-ND
    ON SemiconductorMOSFET N-CH 55V 2.4A MLP
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      FDMC15N06
      DISTI # FDMC15N06TR-ND
      ON SemiconductorMOSFET N-CH 55V 2.4A MLP
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 3000:$0.6930
      FDMC15N06
      DISTI # V36:1790_06338153
      ON SemiconductorFET 55V 90.0 MOHM MLP330
        FDMC15N06
        DISTI # FDMC15N06
        ON SemiconductorTrans MOSFET N-CH 55V 2.4A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC15N06)
        RoHS: Compliant
        Min Qty: 3000
        Container: Reel
        Americas - 0
        • 3000:$0.5879
        • 6000:$0.5839
        • 12000:$0.5759
        • 18000:$0.5689
        • 30000:$0.5549
        FDMC15N06
        DISTI # FDMC15N06
        ON SemiconductorTrans MOSFET N-CH 55V 2.4A 8-Pin Power 33 T/R - Bulk (Alt: FDMC15N06)
        RoHS: Not Compliant
        Min Qty: 500
        Container: Bulk
        Americas - 0
        • 500:$0.6789
        • 502:$0.6749
        • 1002:$0.6659
        • 2500:$0.6579
        • 5000:$0.6409
        FDMC15N06
        DISTI # FDMC15N06
        ON SemiconductorTrans MOSFET N-CH 55V 2.4A 8-Pin Power 33 T/R (Alt: FDMC15N06)
        RoHS: Compliant
        Min Qty: 3000
        Container: Tape and Reel
        Europe - 0
        • 3000:€1.1849
        • 6000:€0.9219
        • 12000:€0.7649
        • 18000:€0.6449
        • 30000:€0.5979
        FDMC15N06
        DISTI # 64R3010
        ON SemiconductorFET 55V 90.0 MOHM MLP33 / REEL0
        • 30000:$0.5720
        • 18000:$0.5850
        • 12000:$0.6080
        • 6000:$0.6750
        • 3000:$0.7430
        • 1:$0.7740
        FDMC15N06
        DISTI # 512-FDMC15N06
        ON SemiconductorMOSFET UltraFET 55V, 15A
        RoHS: Compliant
        998
        • 1:$1.4800
        • 10:$1.2600
        • 100:$0.9680
        • 500:$0.8560
        • 1000:$0.6750
        • 3000:$0.5990
        • 9000:$0.5770
        FDMC15N06Fairchild Semiconductor CorporationPower Field-Effect Transistor, 2.4A I(D), 55V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant
        19596
        • 1000:$0.6600
        • 500:$0.6900
        • 100:$0.7200
        • 25:$0.7500
        • 1:$0.8100
        FDMC15N06Fairchild Semiconductor Corporation 51000
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          Nuevo y original
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          N-Channel MOSFET
          Disponibilidad
          Valores:
          Available
          En orden:
          4000
          Ingrese la cantidad:
          El precio actual de FDMC15N06 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          0,83 US$
          0,83 US$
          10
          0,79 US$
          7,91 US$
          100
          0,75 US$
          74,91 US$
          500
          0,71 US$
          353,75 US$
          1000
          0,67 US$
          665,90 US$
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