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IRFS4410ZTRLPBF

IRFS4410ZTRLPBF
Mfr. #:
IRFS4410ZTRLPBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET MOSFT 100V 97A 9mOhm 83nC Qg
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFS4410ZTRLPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFS4410ZTRLPBF DatasheetIRFS4410ZTRLPBF Datasheet (P4-P6)IRFS4410ZTRLPBF Datasheet (P7-P9)IRFS4410ZTRLPBF Datasheet (P10-P12)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
97 A
Rds On - Resistencia de la fuente de drenaje:
9 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Qg - Carga de puerta:
120 nC
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
230 W
Configuración:
Único
Embalaje:
Carrete
Altura:
2.3 mm
Longitud:
6.5 mm
Tipo de transistor:
1 N-Channel
Ancho:
6.22 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
140 S
Otoño:
57 ns
Tipo de producto:
MOSFET
Hora de levantarse:
52 ns
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Parte # Alias:
SP001567800
Unidad de peso:
0.139332 oz
Tags
IRFS4410ZT, IRFS4410Z, IRFS44, IRFS4, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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MOSFET, N, 100V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0072ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissi
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Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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***ineon
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***nell
MOSFET, N-CH, 100V, 97A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:97A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:230W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
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Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
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TUBE // Automotive MOSFET 75V, 75A, 7 mOhm,150nC Qg, D2Pak
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Power Field-Effect Transistor, 106A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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MOSFET, N CH, 75V, 106A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:106A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263AB; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)
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N-channel 100 V, 0.0068 Ohm typ., 80 A STripFET F7 Power MOSFET in D2PAK package
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MOSFET, N-CH, 100V, 80A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:100V; On Resistance
***nell
MOSFET, N-CH, 100V, 80A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 120W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET VII DeepGATE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
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Single N-Channel 100 V 6.5 mOhm 51 nC OptiMOS™ Power Mosfet - D2PAK
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Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ical
Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R
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Power Field-Effect Transistor
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RES SMD 30.9 OHM 1% 1W 2512
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REEL / NCH 100A 100V TO-263
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Single N-Channel 75 V 0.0078 Ohm 250 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0078Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, 75V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:70A; Cont Current Id @ 25°C:100A; Current Id Max:100A; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:3.8W; Pulse Current Idm:520A; Rth:0.75; Termination Type:SMD; Voltage Vds:75V; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
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75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
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MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 106A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation
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100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
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Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:88A; On Resistance Rds(On):0.008Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***nell
MOSFET, N-CH, 100V, 88A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 88A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 200W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 2 - 1 year; SVHC: No SVHC (27-Jun-2018)
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Power Field-Effect Transistor, 120A I(D), 75V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
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MOSFET, N CH, 75V, 120A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 310W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 120A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 75V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
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***nell
MOSFET, N-CH, 100V, 75A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0115ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 310W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: UltraFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Parte # Mfg. Descripción Valores Precio
IRFS4410ZTRLPBF
DISTI # V72:2272_13891321		Infineon Technologies AGTrans MOSFET N-CH 100V 97A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		2350
  • 1000:$0.9934
  • 500:$1.2876
  • 250:$1.3902
  • 100:$1.4383
  • 25:$1.7044
  • 10:$1.7112
  • 1:$1.9369
IRFS4410ZTRLPBF
DISTI # IRFS4410ZTRLPBFCT-ND		Infineon Technologies AGMOSFET N-CH 100V 97A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2114In Stock
  • 100:$2.3675
  • 10:$2.9050
  • 1:$3.2000
IRFS4410ZTRLPBF
DISTI # IRFS4410ZTRLPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 100V 97A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2114In Stock
  • 100:$2.3675
  • 10:$2.9050
  • 1:$3.2000
IRFS4410ZTRLPBF
DISTI # IRFS4410ZTRLPBFTR-ND		Infineon Technologies AGMOSFET N-CH 100V 97A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		1600In Stock
  • 800:$1.6629
IRFS4410ZTRLPBF
DISTI # 27576725		Infineon Technologies AGTrans MOSFET N-CH 100V 97A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		2350
  • 1000:$0.9934
  • 500:$1.2876
  • 250:$1.3902
  • 100:$1.4383
  • 25:$1.7044
  • 10:$1.7112
  • 8:$1.9369
IRFS4410ZTRLPBF
DISTI # IRFS4410ZTRLPBF		Infineon Technologies AGTrans MOSFET N-CH 100V 97A 3-Pin D2PAK T/R - Tape and Reel (Alt: IRFS4410ZTRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$1.2219
  • 1600:$1.1779
  • 3200:$1.1359
  • 4800:$1.0969
  • 8000:$1.0779
IRFS4410ZTRLPBF
DISTI # SP001567800		Infineon Technologies AGTrans MOSFET N-CH 100V 97A 3-Pin D2PAK T/R (Alt: SP001567800)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 0
  • 800:€1.0539
  • 1600:€0.8779
  • 3200:€0.8099
  • 4800:€0.7519
  • 8000:€0.7019
IRFS4410ZTRLPBF
DISTI # 13AC9161		Infineon Technologies AGMOSFET, N-CH, 100V, 97A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:97A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0072ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes3154
  • 1:$2.8000
  • 10:$2.4100
  • 25:$2.2700
  • 50:$2.1100
  • 100:$1.9700
  • 250:$1.8600
  • 500:$1.7400
IRFS4410ZTRLPBF
DISTI # 942-IRFS4410ZTRLPBF		Infineon Technologies AGMOSFET MOSFT 100V 97A 9mOhm 83nC Qg
RoHS: Compliant		1240
  • 1:$2.5400
  • 10:$2.1600
  • 100:$1.7300
  • 500:$1.5100
  • 800:$1.2600
IRFS4410ZTRLPBFInfineon Technologies AGSingle N-Channel 100V 9 mOhm 83 nC HEXFET Power Mosfet - D2PAK
RoHS: Compliant		58400Reel
  • 800:$1.0800
IRFS4410ZTRLPBF
DISTI # 9155058P		Infineon Technologies AGMOSFET N-CHANNEL HEXFET 100V 97A D2PAK, RL3376
  • 16:£1.5590
  • 80:£1.4060
  • 200:£1.2550
  • 400:£1.2300
IRFS4410ZTRLPBF
DISTI # C1S322000495678		Infineon Technologies AGMOSFETs2350
  • 250:$1.3902
  • 100:$1.4383
  • 25:$1.7044
  • 10:$1.7112
IRFS4410ZTRLPBF
DISTI # XSFP00000103020		Infineon Technologies AG 
RoHS: Compliant		27458
  • 800:$2.1600
  • 27458:$1.9600
IRFS4410ZTRLPBF
DISTI # XSLY00000001050		INFINEON/IRD2-PAK (TO-263)
RoHS: Compliant		4032
  • 800:$1.1400
  • 4032:$1.0700
IRFS4410ZTRLPBF
DISTI # 2725990		Infineon Technologies AGMOSFET, N-CH, 100V, 97A, TO-263
RoHS: Compliant		3184
  • 1:£1.9800
  • 10:£1.4200
  • 100:£1.2700
  • 250:£1.2400
  • 500:£0.9620
IRFS4410ZTRLPBF
DISTI # 2725990		Infineon Technologies AGMOSFET, N-CH, 100V, 97A, TO-263
RoHS: Compliant		3154
  • 1:$4.8000
  • 10:$4.3300
  • 100:$3.4800
Imagen Parte # Descripción
ADUM1250ARZ-RL7

Mfr.#: ADUM1250ARZ-RL7

OMO.#: OMO-ADUM1250ARZ-RL7

 Digital Isolators Hot Swappable Dual I2C
REF195ESZ

Mfr.#: REF195ESZ

OMO.#: OMO-REF195ESZ

 Voltage References 5V Prec Micropwr LDO Low VRef
V10P10-M3/86A

Mfr.#: V10P10-M3/86A

OMO.#: OMO-V10P10-M3-86A

 Schottky Diodes & Rectifiers 10 Amp 100 Volt
LM2937ESX-5.0/NOPB

Mfr.#: LM2937ESX-5.0/NOPB

OMO.#: OMO-LM2937ESX-5-0-NOPB

 LDO Voltage Regulators 500 MA LDO REG
EKY-500ELL222MMP1S

Mfr.#: EKY-500ELL222MMP1S

OMO.#: OMO-EKY-500ELL222MMP1S

 Aluminum Electrolytic Capacitors - Radial Leaded 50volts 2200uF 18X35.5
T498X476K035ATE500

Mfr.#: T498X476K035ATE500

OMO.#: OMO-T498X476K035ATE500

 Tantalum Capacitors - Solid SMD 35V 47uF 2917 10% ESR=500mOhms
ERZ-E14A201

Mfr.#: ERZ-E14A201

OMO.#: OMO-ERZ-E14A201-PANASONIC

 Varistors 14mm D type 200volts 10KA 140J 1300pF
REF195ESZ

Mfr.#: REF195ESZ

OMO.#: OMO-REF195ESZ-ANALOG-DEVICES

 Voltage References 5V Prec Micropwr LDO Low VRef
1923869

Mfr.#: 1923869

OMO.#: OMO-1923869-PHOENIX-CONTACT

 Conn Shrouded Header HDR 2 POS 5.08mm Solder RA Thru-Hole
LM2937ESX-5.0/NOPB

Mfr.#: LM2937ESX-5.0/NOPB

OMO.#: OMO-LM2937ESX-5-0-NOPB-TEXAS-INSTRUMENTS

 IC REG LIN 5V 500MA DDPAK/TO263
Disponibilidad
Valores:
892
En orden:
2875
Ingrese la cantidad:
El precio actual de IRFS4410ZTRLPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,53 US$
2,53 US$
10
2,15 US$
21,50 US$
100
1,72 US$
172,00 US$
500
1,51 US$
755,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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