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AOTS40B65H1

AOTS40B65H1
Mfr. #:
AOTS40B65H1
Fabricante:
Alpha & Omega Semiconductor Inc
Descripción:
IGBT 650V 40A TO220
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
AOTS40B65H1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
AOTS40B65H1 DatasheetAOTS40B65H1 Datasheet (P4-P6)AOTS40B65H1 Datasheet (P7)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Alpha & Omega Semiconductor Inc.
categoria de producto
IGBTs - Single
Serie
Alfa IGBT
embalaje
Tubo
Paquete-Estuche
TO-220-3
Tipo de entrada
Estándar
Tipo de montaje
A través del orificio
Paquete de dispositivo de proveedor
TO-220
Potencia máxima
300W
Tiempo de recuperación inverso trr
-
Colector-corriente-Ic-Max
80A
Voltaje-Colector-Emisor-Ruptura-Máx.
650V
Tipo IGBT
-
Colector de corriente pulsado Icm
120A
Vce-en-Max-Vge-Ic
2.4V @ 15V, 40A
Energía de conmutación
1.27mJ (on), 460μJ (off)
Gate-Charge
63nC
Td-encendido-apagado-25 ° C
41ns/130ns
Condición de prueba
400V, 40A, 7.5 Ohm, 15V
Tags
AOTS, AOT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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650V, 40A Alpha IGBT (TM), TO220-3, RoHS
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IGBT 650V 40A TO220
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Trench gate field-stop IGBT, H series 600 V, 30 A high speed
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Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-220AB
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Trans IGBT Chip N-CH 600V 80A 62500mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ark
IGBT, SINGLE, 600V, 80A, TO-220AB; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:283W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
***ical
Trans IGBT Chip N-CH 650V 30A 31000mW 3-Pin(3+Tab) TO-220FP Tube
***icroelectronics
Trench gate field-stop IGBT M series, 650 V 15 A low loss
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***ical
Trans IGBT Chip N-CH 650V 10.8A 31200mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
IKA08N65H5 Series 650 V 10.8 A Through Hole DuoPack IGBT - TO-220-3
***ineon SCT
650 V, 8 A IGBT with anti-parallel diode in TO-220 package, PG-TO220-3, RoHS
***nell
IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 31.2W; Collector Emitter Voltage V(br)ceo: 650V; Transistor ; Available until stocks are exhausted
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***ical
Trans IGBT Chip N-CH 650V 10.8A 3-Pin(3+Tab) TO-220FP Tube
***ark
Igbt Single Transistor, 8 A, 1.6 V, 31.2 W, 650 V, To-220, 3 Rohs Compliant: Yes
***ineon SCT
High Speed 650 V, 8 A hard-switching TRENCHSTOP™ IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS
***nell
IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 31.2W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins; O
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***ical
Trans IGBT Chip N-CH 650V 30000mW 3-Pin(3+Tab) TO-220F Rail
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Using innovative field stop IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for IPL (Intense Pulsed Light).
Parte # Mfg. Descripción Valores Precio
AOTS40B65H1
DISTI # 785-1774-ND		Alpha & Omega SemiconductorIGBT 650V 40A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		532In Stock
  • 5000:$1.0850
  • 3000:$1.0986
  • 1000:$1.1799
  • 500:$1.4241
  • 250:$1.6275
  • 100:$1.8309
  • 25:$2.0344
  • 10:$2.2790
  • 1:$2.5200
Imagen Parte # Descripción
AOTS40B65H1

Mfr.#: AOTS40B65H1

OMO.#: OMO-AOTS40B65H1-ALPHA-AND-OMEGA-SEMICONDUCTOR

 IGBT 650V 40A TO220
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de AOTS40B65H1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,63 US$
1,63 US$
10
1,55 US$
15,46 US$
100
1,46 US$
146,48 US$
500
1,38 US$
691,70 US$
1000
1,30 US$
1 302,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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