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IXTA100N15X4

IXTA100N15X4
Mfr. #:
IXTA100N15X4
Fabricante:
Littelfuse
Descripción:
MOSFET DISCMSFT NCHULTRJNCTN X3CLASS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTA100N15X4 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IXTA100N15X4 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
150 V
Id - Corriente de drenaje continua:
100 A
Rds On - Resistencia de la fuente de drenaje:
11.5 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
74 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
375 W
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Serie:
X4-Class
Marca:
IXYS
Otoño:
10 ns
Tipo de producto:
MOSFET
Hora de levantarse:
7 ns
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
120 ns
Tiempo típico de retardo de encendido:
18 ns
Tags
IXTA100, IXTA10, IXTA1, IXTA, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
X4-Class 135V-150V Power MOSFETs
IXYS X4-Class 135V-150V Power MOSFETs are developed using a charge compensation principle and proprietary process technology. This technology results in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. These MOSFETs are also avalanche rated and exhibit a superior dv/dt performance. Due to the positive temperature coefficient of their on-state resistance, these MOSFETs can be operated in parallel to meet higher current requirements.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
Imagen Parte # Descripción
IXTA100N15X4

Mfr.#: IXTA100N15X4

OMO.#: OMO-IXTA100N15X4

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Mfr.#: IXTA10P50PTRL

OMO.#: OMO-IXTA10P50PTRL-IXYS-CORPORATION

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 IGBT Transistors MOSFET 100 Amps 40V
Disponibilidad
Valores:
50
En orden:
2033
Ingrese la cantidad:
El precio actual de IXTA100N15X4 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
9,11 US$
9,11 US$
10
8,14 US$
81,40 US$
25
7,08 US$
177,00 US$
50
6,94 US$
347,00 US$
100
6,68 US$
668,00 US$
250
5,70 US$
1 425,00 US$
500
5,41 US$
2 705,00 US$
1000
4,56 US$
4 560,00 US$
2500
3,91 US$
9 775,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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