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SI4160DY-T1-GE3

SI4160DY-T1-GE3
Mfr. #:
SI4160DY-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 30V 25.4A 8-SOIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4160DY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
SI4160DY-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
embalaje
Carrete
Alias ​​de parte
SI4160DY-GE3
Unidad de peso
0.006596 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SOIC-Narrow-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Fuente triple de drenaje cuádruple simple
Tipo transistor
1 N-Channel
Disipación de potencia Pd
2.5 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
12 ns
Hora de levantarse
16 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
25.4 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
5.1 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
28 ns
Tiempo de retardo de encendido típico
25 ns
Transconductancia directa-Mín.
60 S
Modo de canal
Mejora
Tags
SI4160DY-T1, SI4160DY-T, SI4160D, SI4160, SI416, SI41, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***th Star Micro
Transistor MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R
***ure Electronics
N-CH MOSFET SO-8 BWL 30V 4.9MOHM @10V- LEAD(PB) AND HALOGEN FREE
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:25.4A; On Resistance Rds(On):0.004Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V Rohs Compliant: Yes
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI4160DY-T1-GE3
DISTI # V72:2272_09215537		Vishay IntertechnologiesTrans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R
RoHS: Compliant		2915
  • 1000:$0.4999
  • 500:$0.7375
  • 250:$0.7698
  • 100:$0.8553
  • 25:$1.0051
  • 10:$1.1168
  • 1:$1.4841
SI4160DY-T1-GE3
DISTI # V36:1790_09215537		Vishay IntertechnologiesTrans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R
RoHS: Compliant		0
  • 2500:$0.5318
SI4160DY-T1-GE3
DISTI # SI4160DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 25.4A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1302In Stock
  • 1000:$0.6327
  • 500:$0.8014
  • 100:$0.9701
  • 10:$1.2440
  • 1:$1.3900
SI4160DY-T1-GE3
DISTI # SI4160DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 25.4A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1302In Stock
  • 1000:$0.6327
  • 500:$0.8014
  • 100:$0.9701
  • 10:$1.2440
  • 1:$1.3900
SI4160DY-T1-GE3
DISTI # SI4160DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 25.4A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 12500:$0.5242
  • 5000:$0.5446
  • 2500:$0.5733
SI4160DY-T1-GE3
DISTI # 25789831		Vishay IntertechnologiesTrans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R
RoHS: Compliant		2915
  • 17:$1.4841
SI4160DY-T1-GE3
DISTI # 31043808		Vishay IntertechnologiesTrans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R
RoHS: Compliant		2500
  • 2500:$0.4894
SI4160DY-T1-GE3
DISTI # SI4160DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4160DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 25000
  • 25000:$0.4273
  • 15000:$0.4391
  • 10000:$0.4516
  • 5000:$0.4708
  • 2500:$0.4852
SI4160DY-T1-GE3
DISTI # SI4160DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R (Alt: SI4160DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4160DY-T1-GE3
    DISTI # SI4160DY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R (Alt: SI4160DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 25000:€0.4819
    • 15000:€0.5039
    • 10000:€0.5699
    • 5000:€0.7019
    • 2500:€0.9789
    SI4160DY-T1-GE3
    DISTI # 05W6940    		Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 25.4A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:25.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
    • 500:$0.7650
    • 250:$0.8620
    • 100:$1.0300
    • 50:$1.1400
    • 25:$1.2600
    • 10:$1.3900
    • 1:$1.4700
    SI4160DY-T1-GE3.
    DISTI # 15AC0296    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:25.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation Pd:5.7W,No. of Pins:8Pins RoHS Compliant: Yes27500
    • 25000:$0.4410
    • 15000:$0.4530
    • 10000:$0.4660
    • 5000:$0.4850
    • 1:$0.5000
    SI4160DY-T1-GE3
    DISTI # 781-SI4160DY-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
    RoHS: Compliant    		2392
    • 1:$1.3600
    • 10:$1.1200
    • 100:$0.8610
    • 500:$0.7410
    • 1000:$0.5840
    • 2500:$0.5450
    • 5000:$0.5180
    • 10000:$0.4990
    SI4160DY-T1-GE3Vishay Intertechnologies 1776
      SI4160DY-T1-GE3Vishay Intertechnologies 140
        SI4160DY-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
        RoHS: Compliant        		Americas - 2500
        • 2500:$0.5550
        • 5000:$0.5240
        • 10000:$0.5080
        • 20000:$0.4970
        Imagen Parte # Descripción
        SI4160DY-T1-GE3

        Mfr.#: SI4160DY-T1-GE3

        OMO.#: OMO-SI4160DY-T1-GE3

        		 MOSFET 30V Vds 20V Vgs SO-8
        SI4160DY

        Mfr.#: SI4160DY

        OMO.#: OMO-SI4160DY-1190

        		 Nuevo y original
        SI4160DY-T1

        Mfr.#: SI4160DY-T1

        OMO.#: OMO-SI4160DY-T1-1190

        		 Nuevo y original
        SI4160DY-T1-E3

        Mfr.#: SI4160DY-T1-E3

        OMO.#: OMO-SI4160DY-T1-E3-1190

        		 Nuevo y original
        SI4160DY-T1-GE3

        Mfr.#: SI4160DY-T1-GE3

        OMO.#: OMO-SI4160DY-T1-GE3-VISHAY

        		 MOSFET N-CH 30V 25.4A 8-SOIC
        SI4160DY-TI-GE3

        Mfr.#: SI4160DY-TI-GE3

        OMO.#: OMO-SI4160DY-TI-GE3-1190

        		 Nuevo y original
        SI4160DY-T1-GE3-CUT TAPE

        Mfr.#: SI4160DY-T1-GE3-CUT TAPE

        OMO.#: OMO-SI4160DY-T1-GE3-CUT-TAPE-1190

        		 Nuevo y original
        Disponibilidad
        Valores:
        Available
        En orden:
        1500
        Ingrese la cantidad:
        El precio actual de SI4160DY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,61 US$
        0,61 US$
        10
        0,58 US$
        5,78 US$
        100
        0,55 US$
        54,80 US$
        500
        0,52 US$
        258,80 US$
        1000
        0,49 US$
        487,10 US$
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