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S25FL128SAGMFA003

S25FL128SAGMFA003
Mfr. #:
S25FL128SAGMFA003
Fabricante:
Cypress Semiconductor
Descripción:
Flash Memory 128-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS (16-PIN SOIC IN T&R PACKING), GT GRADE
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
S25FL128SAGMFA003 Ficha de datos
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S25FL128SAGMFA003 más información S25FL128SAGMFA003 Product Details
Atributo del producto
Valor de atributo
Fabricante
Cypress Semiconductor Corp
categoria de producto
Memoria
Serie
FL-S
embalaje
Embalaje alternativo de cinta y carrete (TR)
Paquete-Estuche
16-SOIC (0.295", 7.50mm Width)
Temperatura de funcionamiento
-40°C ~ 85°C (TA)
Interfaz
Serie SPI
Suministro de voltaje
2.7 V ~ 3.6 V
Paquete de dispositivo de proveedor
16-SO
Tamaño de la memoria
128M (16M x 8)
Tipo de memoria
FLASH - NOR
Velocidad
133MHz
Formato de memoria
DESTELLO
Tags
S25FL128SAGMFA0, S25FL128SAGMFA, S25FL128SAGM, S25FL128SAG, S25FL128SA, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Serial NOR Flash Memory, 128 Mbit Density, SOIC-16, RoHS
***et Europe
NOR Flash Serial-SPI 3V 128Mbit 128M x 1bit 8ns 16-Pin SOIC W T/R
***ark
Tape And Reel / 128-Mbit Cmos 3.0 Volt Flash Memory With 133-Mhz Spi (Serial Peripheral Interface) And Multi I/O Bus (16-Pin Soic In T&R Packing), Gt Grade
S25FL128S NOR Flash Memory Devices
Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.
S25FL MirroBit Flash Non-Volatile Memory
Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
S25FLxS FL-S NOR Flash Memory Devices
Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.
Parte # Mfg. Descripción Valores Precio
S25FL128SAGMFA003
DISTI # S25FL128SAGMFA003-ND		Cypress SemiconductorIC FLASH 128M SPI 133MHZ 16SOIC
RoHS: Compliant
Min Qty: 1450
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1450:$2.7418
S25FL128SAGMFA003
DISTI # 727-25FL128SAGMFA003		Cypress SemiconductorNOR Flash Nor
RoHS: Compliant		0
  • 1450:$2.4900
  • 2900:$2.3700
Imagen Parte # Descripción
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Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de S25FL128SAGMFA003 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
3,56 US$
3,56 US$
10
3,38 US$
33,77 US$
100
3,20 US$
319,95 US$
500
3,02 US$
1 510,90 US$
1000
2,84 US$
2 844,00 US$
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