NTR4502PT3G

Mfr. #:: NTR4502PT3G
Fabricante:: ON Semiconductor
Descripción:: MOSFET -30V -1.95A P-Channel
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: NTR4502PT3G Ficha de datos
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HTML Datasheet:: NTR4502PT3G Datasheet NTR4502PT3G Datasheet (P4-P5)
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Atributo del producto
Valor de atributo

Fabricante:: EN Semiconductor

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: SOT-23-3

Número de canales:: 1 Channel

Polaridad del transistor:: P-Channel

Vds - Voltaje de ruptura de drenaje-fuente:: 30 V

Id - Corriente de drenaje continua:: 1.95 A

Rds On - Resistencia de la fuente de drenaje:: 240 mOhms

Vgs - Voltaje puerta-fuente:: 20 V

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 1.25 W

Configuración:: Único

Modo de canal:: Mejora

Embalaje:: Carrete

Altura:: 0.94 mm

Longitud:: 2.9 mm

Producto:: Pequeña señal MOSFET

Tipo de transistor:: 1 P-Channel

Escribe:: MOSFET

Ancho:: 1.3 mm

Marca:: EN Semiconductor

Transconductancia directa - Mín .:: 3 S

Otoño:: 12 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 12 ns

Cantidad de paquete de fábrica:: 10000

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 19 ns

Tiempo típico de retardo de encendido:: 5.2 ns

Unidad de peso:: 0.000282 oz

Tags: NTR4502PT, NTR4502P, NTR4502, NTR45, NTR4, NTR

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NTR4502PT3G Descripción

***emi: Single P-Channel Power MOSFET -30V -1.95A 200mΩ

***ical: Trans MOSFET P-CH 30V 1.13A 3-Pin SOT-23 T/R

***r Electronics: Small Signal Field-Effect Transistor, 1.95A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-1.95A; On Resistance, Rds(on):155mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:3-SOT-23 ;RoHS Compliant: Yes

***ure Electronics: ZXM61N03F Series 30 V 1.4 A 220 mOhm N-Channel Enhancement Mode Mosfet-SOT-23-3

***C: Trans MOSFET N-CH 30V 3-Pin SOT-23 T/R Trans MOSFET N-CH 30V 3-Pin SOT-23 T/R

***nell: MOSFET, N SOT-23 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:1.4A; Resistance, Rds On:0.22ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:7.3A; No. of Pins:3; Power, Pd:625W; Power, Ptot:625W; Quantity, Reel:3000; Resistance, Rds on Max:0.22ohm; SMD Marking:N03; Temperature, Current:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Rds Measurement:10V; Voltage, Vds Max:30V; Voltage, Vgs th Min:1V; Width, Tape:8mm

***emi: N-Channel, PowerTrench® MOSFET, Logic Level, 30V, 1.4A, 110mΩ

*** Source Electronics: Trans MOSFET N-CH 30V 1.4A 3-Pin SOT-23 T/R / MOSFET N-CH 30V 1.4A SSOT3

***nell: MOSFET, N CH, 30V, 1.4A, SOT-23-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.092ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V;

***rchild Semiconductor: These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

*** Source Electronics: Trans MOSFET P-CH 30V 1.1A 3-Pin SOT-23 T/R / MOSFET P-CH 30V 1.1A SSOT3

***emi: -30V P-Channel Logic Level Enhancement Mode Field Effect Transistor

***nell: MOSFET, P SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 1.1A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.6V; Power Dissipatio

***ment14 APAC: MOSFET, P SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):300mohm; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23 (TO-236); Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:NDS356AP; Tape Width:8mm; Termination Type:SMD; Voltage Vgs th Max:-2.5V

***rchild Semiconductor: SuperSOT™-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

***ure Electronics: Single N-Channel 30 V 160 mOhm 0.6 nC OptiMOS Small Signal Mosfet - SOT-23

***p One Stop Global: Trans MOSFET N-CH 30V 1.4A Automotive 3-Pin SOT-23 T/R

***el Electronic: 30V 1.4A 500mW 160mΩ@10V,1.4A [email protected] N Channel SOT-23(SOT-23-3) MOSFETs ROHS

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.4 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 160 / Gate-Source Voltage V = 20 / Fall Time ns = 1 / Rise Time ns = 2.3 / Turn-OFF Delay Time ns = 5.8 / Turn-ON Delay Time ns = 3.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500

***ure Electronics: ZXMP3A13 Series 30 V 0.21 Ohm P-Channel Enhancement Mode MOSFET - SOT-23-3

***C: Trans MOSFET P-CH 30V 1.6A 3-Pin SOT-23 T/R

***ark: MOSFET, P CHANNEL, 30V, -1.6A, SOT-23; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

***nell: MOSFET, P, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 1.6A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.21ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 806mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -1.6A; Current Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; On State Resistance Max: 210mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 625mW; Pulse Current Idm: 6A; SMD Marking: 313; Termination Type: Surface Mount Device; Voltage Vds Typ: -30V; Voltage Vgs Max: -20V; Voltage Vgs Rds on Measurement: -10V; Voltage Vgs th Min: -1V

***ure Electronics: ZXM61P03F 30 V 0.35 Ohm P-Channel Enhancement Mode Vertical DMOS FET - SOT-23

***ow.cn: Trans MOSFET P-CH 30V 1.1A 3-Pin SOT-23 T/R

***(Formerly Allied Electronics): MOSFET P-Channel 30V HDMOS SOT23

***des Inc SCT: P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***S: French Electronic Distributor since 1988

***nell: MOSFET, P SOT-23 REEL 3K; Transistor Polarity:P; Max Current Id:-1.1A; Max Voltage Vds:30V; On State Resistance:0.35ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:-20V; Power Dissipation:625mW; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:SOT-23; No. of Pins:3; Case Style:SOT-23; Cont Current Id:1.1A; Current Temperature:25°C; Max Junction Temperature Tj:150°C; Max On State Resistance:0.35ohm; Max Power Dissipation Ptot:625W; Min Junction Temperature, Tj:-55°C; Min Voltage Vgs th:-1V; No. of Transistors:1; Power Dissipation Pd:625W; Pulse Current Idm:4.3A; Reel Quantity:3000; SMD Marking:P03; Tape Width:8mm; Termination Type:SMD; Transistor Type:MOSFET; Typ Voltage Vds:-30V; Typ Voltage Vgs th:-1V; Voltage Vgs Rds on Measurement:-10V

Market price

Parte #	Mfg.	Descripción	Valores	Precio
NTR4502PT3G DISTI # VAH:2490_17820135	ON Semiconductor	Trans MOSFET P-CH 30V 1.13A 3-Pin SOT-23 T/R RoHS: Compliant	3359	2500:$0.1690 1000:$0.2060 500:$0.2340 100:$0.3190 25:$0.4670 1:$0.6400
NTR4502PT3G DISTI # NTR4502PT3G-ND	ON Semiconductor	MOSFET P-CH 30V 1.13A SOT-23 RoHS: Compliant Min Qty: 10000 Container: Tape & Reel (TR)	Limited Supply - Call
NTR4502PT3G DISTI # 26077813	ON Semiconductor	Trans MOSFET P-CH 30V 1.13A 3-Pin SOT-23 T/R RoHS: Compliant	3359	2500:$0.1690 1000:$0.2060 500:$0.2340 100:$0.3190 25:$0.4670 10:$0.6400
NTR4502PT3G DISTI # 863-NTR4502PT3G	ON Semiconductor	MOSFET -30V -1.95A P-Channel RoHS: Compliant	0
NTR4502PT3 DISTI # 863-NTR4502PT3	ON Semiconductor	MOSFET -30V -1.95A RoHS: Not compliant	0

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NTR4502PT3G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes