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IRFS3207ZTRRPBF

IRFS3207ZTRRPBF
Mfr. #:
IRFS3207ZTRRPBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET MOSFT 75V 170A 4.1mOhm 120nC Qg
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFS3207ZTRRPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFS3207ZTRRPBF DatasheetIRFS3207ZTRRPBF Datasheet (P4-P6)IRFS3207ZTRRPBF Datasheet (P7-P9)IRFS3207ZTRRPBF Datasheet (P10-P12)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
75 V
Id - Corriente de drenaje continua:
170 A
Rds On - Resistencia de la fuente de drenaje:
4.1 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Qg - Carga de puerta:
170 nC
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
300 W
Configuración:
Único
Embalaje:
Carrete
Altura:
4.4 mm
Longitud:
10 mm
Tipo de transistor:
1 N-Channel
Ancho:
9.25 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
280 S
Otoño:
68 ns
Tipo de producto:
MOSFET
Hora de levantarse:
68 ns
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Parte # Alias:
SP001565050
Unidad de peso:
0.139332 oz
Tags
IRFS3207ZT, IRFS3207Z, IRFS3207, IRFS32, IRFS3, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 75 V 4.1 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH Si 75V 170A 3-Pin(2+Tab) D2PAK Tube
***(Formerly Allied Electronics)
MOSFET, N Ch., 75V, 170A, 4.1 MOHM, 120NC QG, D2-PAK, Pb-Free
***nell
MOSFET, N, 75V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 170A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissip
***(Formerly Allied Electronics)
Transistor MOSFET N-ch 75V 120A D2PAK
***ical
Trans MOSFET N-CH Si 75V 170A Automotive 3-Pin(2+Tab) D2PAK T/R
***ernational Rectifier
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon SCT
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
***nell
MOSFET, N-CH, 75V, 170A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
Benefits: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***ical
Trans MOSFET N-CH 75V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
Single N-Channel 75 V 3.1 mOhm 117 nC OptiMOS™ Power Mosfet - D2PAK
***ineon
The 75V OptiMOS technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. | Summary of Features: Optimized technology for synchronous rectification; Best switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RohS compliant - halogen free; MSL1 rated | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
***ark
MOSFET, N-CH, 60V, 210A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
***(Formerly Allied Electronics)
Transistor MOSFET N-ch 60V 120A D2PAK
***ical
Trans MOSFET N-CH Si 60V 210A Automotive 3-Pin(2+Tab) D2PAK T/R
***ernational Rectifier
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
***ineon SCT
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
***ineon
Benefits: Advanced Process Technology; Ultra Low On-Resistance; Enhanced dV/dT and dI/dT capability; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***nell
MOSFET, N-CH, 60V, 210A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***icroelectronics
N-channel 80 V, 0.0028 Ohm typ., 120 A STripFET F7 Power MOSFET in a H2PAK-2 package
***ical
Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) H2PAK T/R
***icroelectronics SCT
Power MOSFETs, 80V, 120A, H2PAK-2, Tape and Reel
***ponent Sense
TRA FET POW 55V 75A 4MOHM D2PAK3
***el Electronic
CAP CERAMIC DISK RDL LONG LEADS
***Yang
MOSFET Automotive-grade N-channel 80 V, 3.3 mOhm typ 90 A STripFET F7 Power MOSFET in H
***ical
Trans MOSFET N-CH 80V 90A Automotive 3-Pin(2+Tab) H2PAK T/R
***r Electronics
Power Field-Effect Transistor, 90A I(D), 80V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***icroelectronics SCT
Automotive Power Discrete, 80V, 90A, H2PAK-2, Tape and Reel
***ical
Trans MOSFET N-CH 80V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
***emi
N-Channel PowerTrench® MOSFET, 80V, 110A, 3.6mΩ
***r Electronics
Power Field-Effect Transistor, 110A I(D), 80V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***icroelectronics
N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
***r Electronics
Power Field-Effect Transistor, 90A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 80 V 64 A 4.3 mOhm Flange Mount STripFET™ F7 Power Mosfet - TO-220FP
***hard Electronics
VISHAY SQM120N06-3M5L-GE3 MOSFET Transistor, N Channel, 120 A, 60 V, 0.0028 ohm, 10 V, 2 V
***roFlash
SQM120N06-3m5LGE3 N-channel MOSFET Transistor, 120 A, 60 V, 2+Tab-Pin TO-263
***ical
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N-CH, 60V, 120A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:375W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited
Parte # Mfg. Descripción Valores Precio
IRFS3207ZTRRPBF
DISTI # V72:2272_13891541		Infineon Technologies AGTrans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		719
  • 500:$1.5145
  • 250:$1.6635
  • 100:$1.7571
  • 25:$1.9836
  • 10:$2.0063
  • 1:$2.2932
IRFS3207ZTRRPBF
DISTI # IRFS3207ZTRRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 75V 120A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5829In Stock
  • 100:$2.4214
  • 10:$2.9530
  • 1:$3.3100
IRFS3207ZTRRPBF
DISTI # IRFS3207ZTRRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 75V 120A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5829In Stock
  • 100:$2.4214
  • 10:$2.9530
  • 1:$3.3100
IRFS3207ZTRRPBF
DISTI # IRFS3207ZTRRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 75V 120A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		5600In Stock
  • 800:$1.7201
IRFS3207ZTRRPBF
DISTI # 28997281		Infineon Technologies AGTrans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		800
  • 800:$1.7264
IRFS3207ZTRRPBF
DISTI # 31274461		Infineon Technologies AGTrans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		719
  • 500:$1.5145
  • 250:$1.6635
  • 100:$1.7571
  • 25:$1.9836
  • 10:$2.0063
  • 6:$2.2932
IRFS3207ZTRRPBF
DISTI # 49AC0315		Infineon Technologies AGMOSFET, N-CH, 75V, 120A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:75V,On Resistance Rds(on):0.0033ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes139
  • 1:$2.7600
  • 10:$2.3500
  • 25:$2.2500
  • 50:$2.1400
  • 100:$2.0400
  • 250:$1.9300
  • 500:$1.7400
IRFS3207ZTRRPBF
DISTI # 942-IRFS3207ZTRRPBF		Infineon Technologies AGMOSFET MOSFT 75V 170A 4.1mOhm 120nC Qg
RoHS: Compliant		1023
  • 1:$2.7600
  • 10:$2.3500
  • 100:$2.0400
  • 250:$1.9300
  • 500:$1.7400
IRFS3207ZTRRPBFInternational Rectifier 676
    IRFS3207ZTRRPBF
    DISTI # 2839493    		Infineon Technologies AGMOSFET, N-CH, 75V, 120A, TO-263
    RoHS: Compliant    		256
    • 1:£2.3600
    • 10:£1.7800
    • 100:£1.5400
    • 250:£1.4600
    • 500:£1.1000
    IRFS3207ZTRRPBF
    DISTI # 2839493    		Infineon Technologies AGMOSFET, N-CH, 75V, 120A, TO-263
    RoHS: Compliant    		139
    • 1:$3.3800
    • 10:$3.1600
    • 100:$2.7900
    • 250:$2.6400
    • 500:$2.5000
    • 1000:$2.3800
    IRFS3207ZTRRPBF
    DISTI # C1S322000494891    		Infineon Technologies AGTrans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		800
    • 800:$1.4700
    IRFS3207ZTRRPBF
    DISTI # C1S322000689374    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		719
    • 250:$1.6635
    • 100:$1.7571
    • 25:$1.9836
    • 10:$2.0063
    • 1:$2.2932
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    Disponibilidad
    Valores:
    831
    En orden:
    2814
    Ingrese la cantidad:
    El precio actual de IRFS3207ZTRRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,76 US$
    2,76 US$
    10
    2,34 US$
    23,40 US$
    100
    2,03 US$
    203,00 US$
    250
    1,92 US$
    480,00 US$
    500
    1,73 US$
    865,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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