NSBA114YDXV6T1G

NSBA114YDXV6T1G
Mfr. #:
NSBA114YDXV6T1G
Fabricante:
ON Semiconductor
Descripción:
Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NSBA114YDXV6T1G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSBA114YDXV6T1G DatasheetNSBA114YDXV6T1G Datasheet (P4-P6)NSBA114YDXV6T1G Datasheet (P7-P8)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - Pre-polarizados
RoHS:
Y
Configuración:
Doble
Polaridad del transistor:
PNP
Resistencia de entrada típica:
10 kOhms
Relación de resistencia típica:
0.021
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-563-6
Colector de CC / Ganancia base hfe Min:
80
Voltaje colector-emisor VCEO Max:
50 V
Corriente continua del colector:
- 0.1 A
Corriente máxima del colector de CC:
100 mA
Pd - Disipación de energía:
357 mW
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
NSBA114YDXV6
Embalaje:
Carrete
Ganancia de corriente CC hFE Max:
80
Altura:
0.55 mm
Longitud:
1.6 mm
Ancho:
1.2 mm
Marca:
EN Semiconductor
Tipo de producto:
BJTs - Transistores bipolares - Pre-polarizados
Cantidad de paquete de fábrica:
4000
Subcategoría:
Transistores
Unidad de peso:
0.000106 oz
Tags
NSBA114YD, NSBA114Y, NSBA114, NSBA11, NSBA1, NSBA, NSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
***p One Stop Global
Trans Digital BJT PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
***emi
Dual PNP Bipolar Digital Transistor (BRT)
***ure Electronics
NSB Series 50 V 100 mA 47 kOhm PNP Dual Bias Resistor Transistor - SOT-563
***ark
Brt Transistor, 50V, 10K/47Kohm, Sot-563; Transistor Polarity:dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes
***ical
Trans Digital BJT NPN/PNP 50V 100mA 500mW 6-Pin SOT-563 T/R
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ure Electronics
Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital
***emi
Complementary Bipolar Digital Transistor (BRT)
***ment14 APAC
Transistor, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous
***ark
Brt Transistor, 50V, 47K/10Kohm, Sot-553; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm Rohs Compliant: Yes
***nell
TRANS, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.21(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***th Star Micro
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMD4DXV6T1 series two complementary BRT devices are housed in the SOT-563 package which is ideal for low power surface mount applications where board space is at a premium.
***ical
Trans Digital BJT NPN/PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ponent Stockers USA
100 mA 50 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
***enic
1 PCS NPN1 PCS PNP - Pre-Biased(Dual) 500mW 100mA 50V SOT-563 Digital Transistors ROHS
***emi
Complementary Bipolar Digital Transistor (BRT)
***ment14 APAC
TRANSISTOR, RF, NPN/PNP, 50V, SOT-563-6
***ure Electronics
NSBC114 Series 50 V 100 mA Complementary Bias Resistor Transistor - SOT-563
***ark
Brt Transistor, 50V, 47K/10Kohm, Sot-563, Full Reel; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; No. Of Pins:6 Pin Rohs Compliant: Yes
***nell
TRANSISTOR, RF, NPN/PNP, 50V, SOT-563-6; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 4.7(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 6Pins
***ical
Trans Digital BJT NPN/PNP 50V 100mA 500mW 6-Pin SOT-563 T/R
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***emi
Complementary Bipolar Digital Transistor (BRT)
***ark
Brt Transistor, 50V, 47K/10Kohm, Sot-553; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes
Parte # Mfg. Descripción Valores Precio
NSBA114YDXV6T1G
DISTI # 26897636
ON SemiconductorTrans Digital BJT PNP 50V 100mA Automotive 6-Pin SOT-563 T/R
RoHS: Compliant
48000
  • 8000:$0.0761
NSBA114YDXV6T1G
DISTI # NSBA114YDXV6T1GOSTR-ND
ON SemiconductorTRANS 2PNP PREBIAS 0.5W SOT563
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 4000:$0.1040
NSBA114YDXV6T1G
DISTI # NSBA114YDXV6T1G
ON SemiconductorTrans Digital BJT PNP 50V 100mA 6-Pin SOT-563 T/R - Tape and Reel (Alt: NSBA114YDXV6T1G)
RoHS: Compliant
Min Qty: 8000
Container: Reel
Americas - 0
  • 8000:$0.0779
  • 16000:$0.0779
  • 24000:$0.0739
  • 40000:$0.0739
  • 80000:$0.0739
NSBA114YDXV6T1G
DISTI # 42K2299
ON SemiconductorBRT TRANSISTOR, 50V, 47K/10KOHM, SOT-563, FULL REEL,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:10kohm,Base-Emitter Resistor R2:47kohm,Resistor Ratio, R1 / R2:0.21(Ratio) RoHS Compliant: Yes0
  • 1:$0.1200
NSBA114YDXV6T1G
DISTI # 49X8917
ON SemiconductorBRT TRANSISTOR, 50V, 10K/47KOHM, SOT-563,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:10kohm,Base-Emitter Resistor R2:47kohm,Resistor Ratio, R1 / R2:0.21(Ratio) RoHS Compliant: Yes0
  • 1:$0.4030
  • 25:$0.3090
  • 50:$0.2580
  • 100:$0.2160
  • 250:$0.1820
  • 500:$0.1550
  • 1000:$0.1260
  • 2500:$0.1070
NSBA114YDXV6T1GON Semiconductor 
RoHS: Not Compliant
171650
  • 1000:$0.0900
  • 100:$0.1000
  • 500:$0.1000
  • 1:$0.1100
  • 25:$0.1100
NSBA114YDXV6T1G
DISTI # 863-NSBA114YDXV6T1G
ON SemiconductorBipolar Transistors - Pre-Biased 100mA 50V Dual PNP
RoHS: Compliant
6663
  • 1:$0.3500
  • 10:$0.2660
  • 100:$0.1440
  • 1000:$0.1080
  • 4000:$0.0930
  • 8000:$0.0870
  • 24000:$0.0800
  • 48000:$0.0770
  • 100000:$0.0740
NSBA114YDXV6T1GON Semiconductor 6787
    Imagen Parte # Descripción
    M24C04-WDW6TP

    Mfr.#: M24C04-WDW6TP

    OMO.#: OMO-M24C04-WDW6TP

    EEPROM EEPROM S I2C 4k
    RE46C318S8F

    Mfr.#: RE46C318S8F

    OMO.#: OMO-RE46C318S8F

    Gate Drivers Horn driver w/BO det
    NSBC114YDXV6T1G

    Mfr.#: NSBC114YDXV6T1G

    OMO.#: OMO-NSBC114YDXV6T1G

    Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
    1N4148WT

    Mfr.#: 1N4148WT

    OMO.#: OMO-1N4148WT

    Diodes - General Purpose, Power, Switching SINGLE JUNC. 75V 4.0NS COMP
    STL140N6F7

    Mfr.#: STL140N6F7

    OMO.#: OMO-STL140N6F7

    MOSFET N-channel 60 V, 0.0024 Ohm typ., 140 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
    2N7002VA

    Mfr.#: 2N7002VA

    OMO.#: OMO-2N7002VA

    MOSFET N-Chan Enhancement Mode Field Effect
    STM32F030K6T6

    Mfr.#: STM32F030K6T6

    OMO.#: OMO-STM32F030K6T6

    ARM Microcontrollers - MCU Entry-level ARM Cortex-M0 Value MCU
    TLV70433DBVT

    Mfr.#: TLV70433DBVT

    OMO.#: OMO-TLV70433DBVT

    LDO Voltage Regulators 150mAUltra-Low IQ High Vin LDO Reg
    RE46C318S8F

    Mfr.#: RE46C318S8F

    OMO.#: OMO-RE46C318S8F-MICROCHIP-TECHNOLOGY

    Gate Drivers Horn driver w/BO det
    12063C105KAT2A

    Mfr.#: 12063C105KAT2A

    OMO.#: OMO-12063C105KAT2A-AVX

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 1uF 25volts X7R 10%
    Disponibilidad
    Valores:
    Available
    En orden:
    1988
    Ingrese la cantidad:
    El precio actual de NSBA114YDXV6T1G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,35 US$
    0,35 US$
    10
    0,27 US$
    2,66 US$
    100
    0,14 US$
    14,40 US$
    1000
    0,11 US$
    108,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
    Empezar con
    Top