IXFJ20N85X

IXFJ20N85X
Mfr. #:
IXFJ20N85X
Fabricante:
Littelfuse
Descripción:
MOSFET DISCMSFT NCH ULTRJNCTN XCLASS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFJ20N85X Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFJ20N85X DatasheetIXFJ20N85X Datasheet (P4-P5)
ECAD Model:
Más información:
IXFJ20N85X más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
850 V
Id - Corriente de drenaje continua:
9.5 A
Rds On - Resistencia de la fuente de drenaje:
360 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3.5 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
63 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
110 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Serie:
Clase X
Tipo de transistor:
1 N-Channel
Marca:
IXYS
Transconductancia directa - Mín .:
6 S
Otoño:
20 ns
Tipo de producto:
MOSFET
Hora de levantarse:
28 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
44 ns
Tiempo típico de retardo de encendido:
20 ns
Unidad de peso:
0.176370 oz
Tags
IXFJ, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 850V 9.5A TO247
X-Class 850V - 1000V Power MOSFETs with HiPerFET™
IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
Parte # Mfg. Descripción Valores Precio
IXFJ20N85X
DISTI # IXFJ20N85X-ND
IXYS CorporationMOSFET N-CH 850V 9.5A TO247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$7.6467
IXFJ20N85X
DISTI # 747-IXFJ20N85X
IXYS CorporationMOSFET 850V/9.5A Ultra Junction X-Class HiPerFETPower MOSFET, ISO TO-247
RoHS: Compliant
20
  • 1:$10.7200
  • 10:$9.6500
  • 25:$8.0300
  • 50:$7.4600
  • 100:$7.2900
  • 250:$6.6600
  • 500:$6.0700
  • 1000:$5.7900
Imagen Parte # Descripción
IXFH10N80P

Mfr.#: IXFH10N80P

OMO.#: OMO-IXFH10N80P

MOSFET 10 Amps 800V 1.1 Rds
MGJ2D052005SC

Mfr.#: MGJ2D052005SC

OMO.#: OMO-MGJ2D052005SC-MURATA-POWER-SOLUTIONS

Isolated DC/DC Converters 2W 5Vin 20/-5Vout 80/40mA SIP
IXFH20N85X

Mfr.#: IXFH20N85X

OMO.#: OMO-IXFH20N85X-IXYS-CORPORATION

850V/20A ULTRA JUNCTION X-CLASS
IXFH10N80P

Mfr.#: IXFH10N80P

OMO.#: OMO-IXFH10N80P-IXYS-CORPORATION

IGBT Transistors MOSFET 10 Amps 800V 1.1 Rds
Disponibilidad
Valores:
20
En orden:
2003
Ingrese la cantidad:
El precio actual de IXFJ20N85X es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
10,72 US$
10,72 US$
10
9,65 US$
96,50 US$
25
8,03 US$
200,75 US$
50
7,46 US$
373,00 US$
100
7,29 US$
729,00 US$
250
6,66 US$
1 665,00 US$
500
6,07 US$
3 035,00 US$
1000
5,79 US$
5 790,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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