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IRG4BC40W-SPBF

IRG4BC40W-SPBF
Mfr. #:
IRG4BC40W-SPBF
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRG4BC40W-SPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRG4BC40W-SPBF DatasheetIRG4BC40W-SPBF Datasheet (P4-P6)IRG4BC40W-SPBF Datasheet (P7-P9)IRG4BC40W-SPBF Datasheet (P10)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
DPAK-3
Estilo de montaje:
SMD / SMT
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
2.05 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
40 A
Pd - Disipación de energía:
160 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Tubo
Corriente continua de colector Ic Max:
40 A
Altura:
4.83 mm
Longitud:
10.67 mm
Ancho:
9.65 mm
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1000
Subcategoría:
IGBT
Parte # Alias:
SP001536114
Unidad de peso:
0.009185 oz
Tags
IRG4BC40W-S, IRG4BC40W, IRG4BC4, IRG4BC, IRG4B, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop
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***ineon SCT
600V Warp 60-150 kHz Discrete IGBT in a D2Pak package, D2PAK-3, RoHS
***ure Electronics
IRG4BC40W Series 600 V 40 A Insulated Gate Bipolar Transistor - D2PAK-3
***ment14 APAC
IGBT, D2-PAK; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:40A; Package / Case:D2-PAK; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:23ns; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 40A 208000mW Automotive 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***or
IGBT FIELD STOP 600V 40A D2PAK
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IGBT Transistors 600V 20A FSP IGBT
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IGBT, 600V, 40A, 150DEG C, 208W;
***rchild Semiconductor
Using novel field-stop IGBT technology, Fairchild’s new series of field-stop IGBTs offer optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 600V 28A 167000mW 3-Pin(2+Tab) D2PAK Tube
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:28A; Collector Emitter Saturation Voltage, Vce(sat):2.2V; Power Dissipation, Pd:167W; Package/Case:D2PAK ;RoHS Compliant: Yes
***nell
IGBT, D2-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current, Ic Continuous a Max:28A; Voltage, Vce Sat Max:2.2V; Power Dissipation:167W; Case Style:D2-PAK; Termination Type:SMD; Current, Icm Pulsed:56A; Marking, SMD:GS8B60K; Power, Pd:167W; Time, Fall:42ns; Time, Fall Max:42ns; Time, Rise:21ns; Voltage, Vceo:600V
***et
TO-263AB, SINGLE, 600V SIZE 3 N-CH SMPS II IGBT
***i-Key
IGBT N-CH SMPS 600V 45A TO263AB
***ser
IGBTs Sgl, 600V, Ch
***i-Key Marketplace
N-CHANNEL IGBT
***-Wing Technology
Tube Surface Mount N-CHANNEL SINGLE WITH BUILT-IN DIODE IGBT Transistor 2.7V @ 15V 7A 28A 125W 31ns
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TO-263AB, COMP, N-CH, 600V SMPS II IGBT W/STEALTH DIODE
*** Electronic Components
Motor / Motion / Ignition Controllers & Drivers Comp N-Ch 600V
***ical
Trans IGBT Chip N-CH 600V 31A 3-Pin(2+Tab) D2PAK
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:31A; Collector Emitter Saturation Voltage, Vce(sat):2.2V; Power Dissipation, Pd:208W; Package/Case:D2PAK ;RoHS Compliant: Yes
***ment14 APAC
SINGLE IGBT, 600V, 31A; Transistor Type:; SINGLE IGBT, 600V, 31A; Transistor Type:IGBT; DC Collector Current:31A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C
***ineon SCT
Copacked 600V IGBT in a D2-Pak package with a hyperfast 1-8 kHz diode, D2PAKCOPAK, RoHS
***ow.cn
Trans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(2+Tab) D2PAK Tube
***ineon
Target Applications: Air Conditioner; Dryer; Pump; Solar; UPS; Washing Machine
***ment14 APAC
IGBT, D2-PAK; Transistor Type:IGBT; DC Collector Current:31A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:17A; Fall Time Max:230ns; Package / Case:D2-PAK; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:120A; Rise Time:27ns; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:600V
Parte # Mfg. Descripción Valores Precio
IRG4BC40W-SPBF
DISTI # V99:2348_13892163		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		367
  • 1000:$2.0770
  • 500:$2.4580
  • 100:$2.8880
  • 50:$3.2670
  • 1:$4.3010
IRG4BC40W-SPBF
DISTI # V36:1790_13892163		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		77
  • 1000:$2.0770
  • 500:$2.4580
  • 100:$2.8880
  • 50:$3.2670
  • 1:$4.3010
IRG4BC40W-SPBF
DISTI # IRG4BC40W-SPBF-ND		Infineon Technologies AGIGBT 600V 40A 160W D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		1135In Stock
  • 1000:$2.1924
  • 500:$2.5995
  • 100:$3.0536
  • 50:$3.5234
  • 1:$4.1500
IRG4BC40W-SPBF
DISTI # 31014189		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		798
  • 6:$1.7693
IRG4BC40W-SPBF
DISTI # 27472422		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		367
  • 1000:$2.2328
  • 500:$2.6423
  • 100:$3.1046
  • 50:$3.5120
  • 4:$4.2032
IRG4BC40W-SPBF
DISTI # 30882926		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		77
  • 1000:$2.2328
  • 500:$2.6423
  • 100:$3.1046
  • 50:$3.5120
  • 4:$4.2032
IRG4BC40W-SPBF
DISTI # 30609831		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		20
  • 12:$2.2313
IRG4BC40WSPBF
DISTI # IRG4BC40W-SPBF		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: IRG4BC40W-SPBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 6000:$1.7900
  • 10000:$1.7900
  • 2000:$1.8900
  • 4000:$1.8900
  • 1000:$1.9900
IRG4BC40WSPBF
DISTI # IRG4BC40W-SPBF		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) D2PAK (Alt: IRG4BC40W-SPBF)
RoHS: Compliant
Min Qty: 1000		Asia - 0
  • 50000:$1.8153
  • 25000:$1.8386
  • 10000:$1.8625
  • 5000:$1.8870
  • 3000:$1.9380
  • 2000:$1.9918
  • 1000:$2.0487
IRG4BC40WSPBF
DISTI # SP001536114		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) D2PAK (Alt: SP001536114)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€1.4900
  • 100:€1.5900
  • 500:€1.5900
  • 50:€1.6900
  • 25:€1.7900
  • 10:€1.8900
  • 1:€1.9900
IRG4BC40W-SPBF
DISTI # 97K2288		Infineon Technologies AGIGBT Single Transistor, 40 A, 2.5 V, 160 W, 600 V, TO-263, 3 RoHS Compliant: Yes2203
  • 500:$2.4900
  • 250:$2.7900
  • 100:$2.9300
  • 50:$3.0800
  • 25:$3.2300
  • 10:$3.3800
  • 1:$3.9800
IRG4BC40W-SPBF
DISTI # 70018439		Infineon Technologies AG600V Warp 60-150 kHz Discrete IGBT IN A D2PAK Package
RoHS: Compliant		0
  • 200:$5.2800
IRG4BC40W-SPBF
DISTI # 942-IRG4BC40W-SPBF		Infineon Technologies AGIGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT
RoHS: Compliant		1004
  • 1:$3.9400
  • 10:$3.3500
  • 100:$2.9000
  • 250:$2.7600
  • 500:$2.4700
  • 1000:$2.0800
  • 2000:$1.9800
IRG4BC40W-SPBFInfineon Technologies AGIRG4BC40W Series 600 V 40 A Insulated Gate Bipolar Transistor - D2PAK-3
RoHS: Compliant		50Tube
  • 50:$2.6100
  • 250:$2.4800
IRG4BC40W-SPBFInternational Rectifier 1000
    IRG4BC40W-SPBF
    DISTI # 8640918P    		Infineon Technologies AGIGBT N-CH 600V 40A D2PAK, TU1795
    • 1000:£1.5840
    • 500:£1.7220
    • 250:£1.8880
    • 50:£2.5140
    IRG4BC40W-SPBF
    DISTI # IRG4BC40W-SPBF    		Infineon Technologies AGTransistor: IGBT,600V,40A,160W,D2PAK120
    • 1:$2.9665
    • 3:$2.6168
    • 10:$2.3574
    • 50:$2.1995
    IRG4BC40W-SPBF
    DISTI # 1078435    		Infineon Technologies AGIGBT, D2-PAK
    RoHS: Compliant    		2203
    • 500:$3.8000
    • 250:$4.2500
    • 100:$4.4600
    • 10:$5.1600
    • 1:$6.0600
    IRG4BC40W-SPBF
    DISTI # 1078435    		Infineon Technologies AGIGBT, D2-PAK
    RoHS: Compliant    		2205
    • 500:£1.9700
    • 250:£2.1900
    • 100:£2.3000
    • 10:£2.6600
    • 1:£3.5100
    IRG4BC40W-SPBF
    DISTI # XSKDRABS0006924    		Infineon Technologies AGPowerField-EffectTransistor,75AI(D),100V,0.01ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET
    RoHS: Compliant    		300 in Stock0 on Order
    • 300:$2.8320
    IRG4BC40WSPBFInternational Rectifier 
    RoHS: Compliant    		Europe - 600
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      Disponibilidad
      Valores:
      988
      En orden:
      2971
      Ingrese la cantidad:
      El precio actual de IRG4BC40W-SPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      3,94 US$
      3,94 US$
      10
      3,35 US$
      33,50 US$
      100
      2,90 US$
      290,00 US$
      250
      2,76 US$
      690,00 US$
      500
      2,47 US$
      1 235,00 US$
      1000
      2,08 US$
      2 080,00 US$
      2000
      1,98 US$
      3 960,00 US$
      5000
      1,90 US$
      9 500,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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