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SI4108DY-T1-GE3

SI4108DY-T1-GE3
Mfr. #:
SI4108DY-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET RECOMMENDED ALT 78-SI4090DY-T1-GE3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4108DY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1.75 mm
Longitud:
4.9 mm
Serie:
SI4
Ancho:
3.9 mm
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Parte # Alias:
SI4108DY-GE3
Unidad de peso:
0.006596 oz
Tags
SI4108, Si410, SI41, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 75V 13.8A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:20500mA; Drain Source Voltage, Vds:75V; On Resistance, Rds(on):0.0098ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:20V; Power Dissipation, Pd:3.6W ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N-CH, 75V, 20.5A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:20.5A; Drain Source Voltage Vds:75V; On Resistance Rds(on):8.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:7.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20.5A; Power Dissipation Pd:7.8W; Voltage Vgs Max:20V
Parte # Mfg. Descripción Valores Precio
SI4108DY-T1-GE3
DISTI # V36:1790_14142109		Vishay IntertechnologiesTrans MOSFET N-CH 75V 13.8A 8-Pin SOIC N T/R
RoHS: Compliant		0
    SI4108DY-T1-GE3
    DISTI # SI4108DY-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 75V 20.5A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI4108DY-T1-GE3
      DISTI # SI4108DY-T1-GE3DKR-ND      		Vishay SiliconixMOSFET N-CH 75V 20.5A 8-SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI4108DY-T1-GE3
        DISTI # 781-SI4108DY-T1-GE3        		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SI4090DY-T1-GE3
        RoHS: Compliant        		0
          SI4108DY-T1-GE3Vishay Intertechnologies 1000
            Imagen Parte # Descripción
            SI4108DY-T1-GE3

            Mfr.#: SI4108DY-T1-GE3

            OMO.#: OMO-SI4108DY-T1-GE3

            		 MOSFET RECOMMENDED ALT 78-SI4090DY-T1-GE3
            SI4108DY

            Mfr.#: SI4108DY

            OMO.#: OMO-SI4108DY-1190

            		 Nuevo y original
            SI4108DY-T1-GE3

            Mfr.#: SI4108DY-T1-GE3

            OMO.#: OMO-SI4108DY-T1-GE3-VISHAY

            		 MOSFET N-CH 75V 20.5A 8-SOIC
            Disponibilidad
            Valores:
            Available
            En orden:
            2000
            Ingrese la cantidad:
            El precio actual de SI4108DY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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