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SI3417DV-T1-GE3

SI3417DV-T1-GE3
Mfr. #:
SI3417DV-T1-GE3
Fabricante:
Vishay
Descripción:
IGBT Transistors MOSFET -30V .0252ohm@-10V -8A P-Ch T-FET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI3417DV-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SI3417DV-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Unidad de peso
0.000705 oz
Estilo de montaje
SMD / SMT
Nombre comercial
TrenchFET
Paquete-Estuche
TSOP-6
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 P-Channel
Disipación de potencia Pd
4.2 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
16 ns
Hora de levantarse
35 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
8 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Vgs-th-Gate-Source-Threshold-Voltage
- 3 V
Resistencia a la fuente de desagüe de Rds
30 mOhms
Polaridad del transistor
P-Channel
Tiempo de retardo de apagado típico
40 ns
Tiempo de retardo de encendido típico
42 ns
Qg-Gate-Charge
32 nC
Transconductancia directa-Mín.
23 S
Tags
SI341, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
P-Channel 30 V 29 mOhm Surface Mount Enhancement Mode Mosfet - SOT-223
***ark
P-Ch MOSFET TSOP-6 Copper 30V 25.2mohm @ 10V
***ical
Trans MOSFET P-CH 30V 7.3A 6-Pin TSOP T/R
***et Europe
Trans MOSFET P-CH 30V 8A 6-Pin TSOP T/R
***et
P-CH MOSFET TSOP-6 COPPER 30V 25.2MOHM @ 10V
***i-Key
MOSFET P-CH 30V 8A TSOP-6
***ronik
P-CH -30V -8A 25,2mOhm TSOP-6
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI3417DV-T1-GE3
DISTI # V72:2272_09216613		Vishay IntertechnologiesTrans MOSFET P-CH 30V 7.3A 6-Pin TSOP T/R
RoHS: Compliant		1206
  • 1000:$0.1376
  • 500:$0.1805
  • 250:$0.2153
  • 100:$0.2175
  • 25:$0.2952
  • 10:$0.2980
  • 1:$0.4084
SI3417DV-T1-GE3
DISTI # SI3417DV-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 30V 8A TSOP-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		210In Stock
  • 1000:$0.1743
  • 500:$0.2256
  • 100:$0.3076
  • 10:$0.4100
  • 1:$0.4900
SI3417DV-T1-GE3
DISTI # SI3417DV-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 30V 8A TSOP-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		210In Stock
  • 1000:$0.1743
  • 500:$0.2256
  • 100:$0.3076
  • 10:$0.4100
  • 1:$0.4900
SI3417DV-T1-GE3
DISTI # SI3417DV-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 30V 8A TSOP-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.1543
SI3417DV-T1-GE3
DISTI # 26717986		Vishay IntertechnologiesTrans MOSFET P-CH 30V 7.3A 6-Pin TSOP T/R
RoHS: Compliant		1206
  • 1000:$0.1376
  • 500:$0.1805
  • 250:$0.2153
  • 100:$0.2175
  • 56:$0.2952
SI3417DV-T1-GE3
DISTI # SI3417DV-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 8A 6-Pin TSOP T/R (Alt: SI3417DV-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel		Asia - 30000
  • 3000:$1.5000
  • 6000:$1.0345
  • 9000:$0.7692
  • 15000:$0.6250
  • 30000:$0.5660
  • 75000:$0.5454
  • 150000:$0.5263
SI3417DV-T1-GE3
DISTI # SI3417DV-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3417DV-T1-GE3)
RoHS: Not Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 6000:$0.1309
  • 12000:$0.1269
  • 18000:$0.1219
  • 30000:$0.1189
  • 60000:$0.1159
SI3417DV-T1-GE3
DISTI # 67X6854		Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET0
  • 1:$0.1900
  • 5000:$0.1800
  • 10000:$0.1570
  • 20000:$0.1400
  • 30000:$0.1290
  • 50000:$0.1170
SI3417DV-T1-GE3
DISTI # 78-SI3417DV-T1-GE3		Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs TSOP-6
RoHS: Compliant		0
  • 1:$0.4300
  • 10:$0.3270
  • 100:$0.2430
  • 500:$0.2000
  • 1000:$0.1540
  • 3000:$0.1410
  • 6000:$0.1320
  • 9000:$0.1230
SI3417DV-T1-GE3
DISTI # C1S803605131865		Vishay IntertechnologiesMOSFETs
RoHS: Compliant		1206
  • 250:$0.2153
  • 100:$0.2175
  • 25:$0.2952
  • 10:$0.2980
Imagen Parte # Descripción
SI3417DV-T1-GE3

Mfr.#: SI3417DV-T1-GE3

OMO.#: OMO-SI3417DV-T1-GE3

 MOSFET -30V Vds 20V Vgs TSOP-6
SI3417DV-T1-GE3

Mfr.#: SI3417DV-T1-GE3

OMO.#: OMO-SI3417DV-T1-GE3-VISHAY

 IGBT Transistors MOSFET -30V .0252ohm@-10V -8A P-Ch T-FET
SI3417DV-T1-GE3-CUT TAPE

Mfr.#: SI3417DV-T1-GE3-CUT TAPE

OMO.#: OMO-SI3417DV-T1-GE3-CUT-TAPE-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de SI3417DV-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,17 US$
0,17 US$
10
0,17 US$
1,65 US$
100
0,16 US$
15,65 US$
500
0,15 US$
73,90 US$
1000
0,14 US$
139,10 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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