OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

IPDD60R080G7XTMA1

IPDD60R080G7XTMA1
Mfr. #:
IPDD60R080G7XTMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPDD60R080G7XTMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPDD60R080G7XTMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PG-HDSOP-10
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
29 A
Rds On - Resistencia de la fuente de drenaje:
80 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
42 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
174 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Marca:
Infineon Technologies
Otoño:
3.5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
5 ns
Cantidad de paquete de fábrica:
1700
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
61 ns
Tiempo típico de retardo de encendido:
19 ns
Parte # Alias:
IPDD60R080G7 SP001632824
Tags
IPDD60R0, IPDD6, IPDD, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 80 mOhm 42 nC CoolMOS™ G7 Power Transistor - HDSOP-10
***ical
Trans MOSFET N-CH 600V 29A 10-Pin HDSOP EP T/R
***i-Key
MOSFET NCH 650V 83A PG-HDSOP-10
***ronik
N-CH 600V 29A 69mOhm HDSOP-10
***et Europe
HIGH POWER_NEW
***ark
Mosfet, N-Ch, 600V, 29A, Hdsop; Transistor Polarity:n Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.069Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 29A, HDSOP; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.069ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:174W; Transistor Case Style:HDSOP; No. of Pins:10Pins; Operating Temperature Max:150°C; Product Range:CoolMOS C7 Gold Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 600V, 29A, HDSOP; Polarità Transistor:Canale N; Corrente Continua di Drain Id:29A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.069ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:174W; Modello Case Transistor:HDSOP; No. di Pin:10Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS C7 Gold Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ C7 Gold (G7) Power MOSFETs
Infineon Technologies CoolMOS™ C7 Gold (G7) Power MOSFETs are housed in the new SMD TO-Leadless (TOLL) package using the Kelvin source concept. The G7 MOSFETs combine improved 600V and 650V CoolMOS™ G7 technology, 4-pin Kelvin source capability, and the improved thermal properties of the TO-Leadless package. This enables an SMD solution for high current hard switching topologies like power factor correction (PFC) up to 3kW. For the 600V CoolMOS™ G7, the MOSFETs can be used for resonant circuits like high end LLC.
Parte # Mfg. Descripción Valores Precio
IPDD60R080G7XTMA1
DISTI # V72:2272_19084634		Infineon Technologies AGTrans MOSFET N-CH 600V 29A 10-Pin HDSOP EP T/R1253
  • 1000:$3.3860
  • 500:$3.7920
  • 250:$4.2580
  • 100:$4.3240
  • 25:$5.0270
  • 10:$5.3740
  • 1:$6.5395
IPDD60R080G7XTMA1
DISTI # IPDD60R080G7XTMA1CT-ND		Infineon Technologies AGMOSFET NCH 650V 83A PG-HDSOP-10
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		446In Stock
  • 500:$4.2168
  • 100:$4.8425
  • 10:$5.8490
  • 1:$6.4700
IPDD60R080G7XTMA1
DISTI # IPDD60R080G7XTMA1DKR-ND		Infineon Technologies AGMOSFET NCH 650V 83A PG-HDSOP-10
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		446In Stock
  • 500:$4.2168
  • 100:$4.8425
  • 10:$5.8490
  • 1:$6.4700
IPDD60R080G7XTMA1
DISTI # IPDD60R080G7XTMA1TR-ND		Infineon Technologies AGMOSFET NCH 650V 83A PG-HDSOP-10
RoHS: Compliant
Min Qty: 1700
Container: Tape & Reel (TR)		On Order
  • 1700:$3.5657
IPDD60R080G7XTMA1
DISTI # 31299832		Infineon Technologies AGTrans MOSFET N-CH 600V 29A 10-Pin HDSOP EP T/R1700
  • 3400:$3.0033
  • 1700:$3.2373
IPDD60R080G7XTMA1
DISTI # 32446493		Infineon Technologies AGTrans MOSFET N-CH 600V 29A 10-Pin HDSOP EP T/R1253
  • 2:$6.5395
IPDD60R080G7XTMA1
DISTI # IPDD60R080G7XTMA1		Infineon Technologies AGHIGH POWER_NEW - Tape and Reel (Alt: IPDD60R080G7XTMA1)
RoHS: Compliant
Min Qty: 1700
Container: Reel		Americas - 0
  • 17000:$3.0900
  • 10200:$3.1900
  • 6800:$3.2900
  • 3400:$3.3900
  • 1700:$3.5900
IPDD60R080G7XTMA1
DISTI # SP001632824		Infineon Technologies AGHIGH POWER_NEW (Alt: SP001632824)
RoHS: Compliant
Min Qty: 1700		Europe - 0
  • 17000:€2.8900
  • 10200:€3.0900
  • 6800:€3.1900
  • 3400:€3.5900
  • 1700:€4.3900
IPDD60R080G7XTMA1
DISTI # 59AC7040		Infineon Technologies AGMOSFET, N-CH, 600V, 29A, HDSOP,Transistor Polarity:N Channel,Continuous Drain Current Id:29A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.069ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes917
  • 1000:$3.4200
  • 500:$3.9300
  • 250:$4.3100
  • 100:$4.5100
  • 50:$4.8600
  • 25:$5.2000
  • 10:$5.4500
  • 1:$6.0400
IPDD60R080G7XTMA1
DISTI # 726-IPDD60R080G7XTM1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		243
  • 1:$5.9800
  • 10:$5.4000
  • 25:$5.1500
  • 100:$4.4700
  • 250:$4.2700
  • 500:$3.8900
  • 1000:$3.3900
  • 1700:$3.2700
IPDD60R080G7XTMA1Infineon Technologies AG650V, 83A, 80mOhms, DDPAK
RoHS: Compliant		26Cut Tape/Mini-Reel
  • 1:$5.2500
  • 50:$4.0600
  • 100:$3.8800
  • 250:$3.6500
  • 500:$3.4900
IPDD60R080G7XTMA1
DISTI # XSKDRABV0051069		Infineon Technologies AG 
RoHS: Compliant		5100 in Stock0 on Order
  • 5100:$4.4100
  • 1700:$4.7200
IPDD60R080G7XTMA1
DISTI # 2888462		Infineon Technologies AGMOSFET, N-CH, 600V, 29A, HDSOP
RoHS: Compliant		917
  • 1000:$5.0400
  • 500:$5.1400
  • 250:$5.4200
  • 100:$5.7300
  • 10:$6.4800
  • 1:$6.9300
IPDD60R080G7XTMA1
DISTI # 2888462		Infineon Technologies AGMOSFET, N-CH, 600V, 29A, HDSOP937
  • 500:£2.8500
  • 250:£3.1300
  • 100:£3.2700
  • 10:£3.7700
  • 1:£4.8400
Imagen Parte # Descripción
P4SMA400A-H

Mfr.#: P4SMA400A-H

OMO.#: OMO-P4SMA400A-H

 TVS Diodes / ESD Suppressors 400V 400W UniDir
IPDD60R050G7XTMA1

Mfr.#: IPDD60R050G7XTMA1

OMO.#: OMO-IPDD60R050G7XTMA1

 MOSFET HIGH POWER_NEW
NTD5C648NLT4G

Mfr.#: NTD5C648NLT4G

OMO.#: OMO-NTD5C648NLT4G

 MOSFET T6 60V LL DPAK
IPD60R180P7ATMA1

Mfr.#: IPD60R180P7ATMA1

OMO.#: OMO-IPD60R180P7ATMA1

 MOSFET
IDDD08G65C6XTMA1

Mfr.#: IDDD08G65C6XTMA1

OMO.#: OMO-IDDD08G65C6XTMA1

 Schottky Diodes & Rectifiers SIC DIODES
74437529203101

Mfr.#: 74437529203101

OMO.#: OMO-74437529203101

 Fixed Inductors WE-HCF 2920 100uH 20% 11.2A 22.9mOhm
B58031I5105M062

Mfr.#: B58031I5105M062

OMO.#: OMO-B58031I5105M062

 Specialty Ceramic Capacitors 1uF 500volt Ceralink (LP) L-Style Lead
IDDD08G65C6XTMA1

Mfr.#: IDDD08G65C6XTMA1

OMO.#: OMO-IDDD08G65C6XTMA1-INFINEON-TECHNOLOGIES

 SIC DIODES
IPD60R180P7ATMA1

Mfr.#: IPD60R180P7ATMA1

OMO.#: OMO-IPD60R180P7ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 650V 18A TO252-3
P4SMA400A-H

Mfr.#: P4SMA400A-H

OMO.#: OMO-P4SMA400A-H-1110

 TVS Diodes - Transient Voltage Suppressors 400V 400W UniDi
Disponibilidad
Valores:
243
En orden:
2226
Ingrese la cantidad:
El precio actual de IPDD60R080G7XTMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,98 US$
5,98 US$
10
5,40 US$
54,00 US$
25
5,15 US$
128,75 US$
100
4,47 US$
447,00 US$
250
4,27 US$
1 067,50 US$
500
3,89 US$
1 945,00 US$
1000
3,39 US$
3 390,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Empezar con
Nuevos productos
More Newest Products
Top