BGA751N7E6327XTSA1

BGA751N7E6327XTSA1
Mfr. #:
BGA751N7E6327XTSA1
Fabricante:
Infineon Technologies
Descripción:
RF Amplifier RF SILICON MMIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BGA751N7E6327XTSA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Amplificador de RF
Paquete / Caja:
TSNP-7
Serie:
BGA751N7
Embalaje:
Carrete
Marca:
Infineon Technologies
Tipo de producto:
Amplificador de RF
Cantidad de paquete de fábrica:
7500
Subcategoría:
Circuitos integrados inalámbricos y RF
Parte # Alias:
751N7 BGA E6327 SP001061044
Tags
BGA751, BGA75, BGA7, BGA
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
RF Amp Chip Single Low Noise Amplifier 1.15GHz 3V 6-Pin TSLP T/R
***i-Key
IC AMP CELLULAR 850MHZ TSNP7-1
***ineon
The BGA751L7 is a low current single-band low noise amplifier MMIC for UMTS bands V, VI and VIII. The LNA is based upon Infineons proprietary and cost-effective SiGe:C technology and comes in a low profileTSNP-7-1 or TSNP-7-2 leadless green packages. Because the matching is off chip, the 800 MHz path can be easily converted into a 900 MHz path by optimizing the input and output matching network. This document specifies the electrical parameters, pinout, application circuit and packaging of the chip. | Summary of Features: Gain: 16 / -8 dB in high / low gain mode; Noise figure: 1.05 dB in high gain mode; Supply current: 3.3 / 0.5 mA in high / low gain mode; Standby mode (< 2 A typ.); Output internally matched to 50 ; Inputs pre-matched to 50 ; 2kV HBM ESD protection; Low external component count; Small leadless TSNP-7-1 / TSNP-7-2 packages (2.0 x 1.3 x 0.39 mm); Pb-free (RoHS compliant) package | Target Applications: LNA for LTE and 3G systems
Parte # Mfg. Descripción Valores Precio
BGA751N7E6327XTSA1
DISTI # BGA751N7E6327XTSA1TR-ND
Infineon Technologies AGIC AMP CELLULAR 850MHZ TSNP7-1
RoHS: Compliant
Min Qty: 7500
Container: Tape & Reel (TR)
Limited Supply - Call
    BGA751N7E6327XTSA1
    DISTI # BGA751N7E6327XTSA1CT-ND
    Infineon Technologies AGIC AMP CELLULAR 850MHZ TSNP7-1
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      BGA751N7E6327XTSA1
      DISTI # BGA751N7E6327XTSA1DKR-ND
      Infineon Technologies AGIC AMP CELLULAR 850MHZ TSNP7-1
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        BGA751N7E6327XTSA1
        DISTI # 726-BGA751N7E6327XTS
        Infineon Technologies AGRF Amplifier RF SILICON MMIC7500
        • 1:$1.0600
        • 10:$0.9010
        • 100:$0.6920
        • 500:$0.6120
        • 1000:$0.4830
        • 2500:$0.4280
        • 7500:$0.4120
        BGA751N7E6327XTSA1Infineon Technologies AGTelecom Circuit, 1-Func, Bipolar, PDSO6
        RoHS: Compliant
        7206
        • 1000:$0.4700
        • 500:$0.5000
        • 100:$0.5200
        • 25:$0.5400
        • 1:$0.5800
        Imagen Parte # Descripción
        BGA751N7E6327XTSA1

        Mfr.#: BGA751N7E6327XTSA1

        OMO.#: OMO-BGA751N7E6327XTSA1

        RF Amplifier RF SILICON MMIC
        BGA751N7E6327XTSA1

        Mfr.#: BGA751N7E6327XTSA1

        OMO.#: OMO-BGA751N7E6327XTSA1-INFINEON-TECHNOLOGIES

        RF Amplifier RF SILICON MMIC
        Disponibilidad
        Valores:
        Available
        En orden:
        1990
        Ingrese la cantidad:
        El precio actual de BGA751N7E6327XTSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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