SI4884BDY-T1-E3

SI4884BDY-T1-E3
Mfr. #:
SI4884BDY-T1-E3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4884BDY-T1-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4884BDY-T1-E3 DatasheetSI4884BDY-T1-E3 Datasheet (P4-P6)SI4884BDY-T1-E3 Datasheet (P7-P9)SI4884BDY-T1-E3 Datasheet (P10)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1.75 mm
Longitud:
4.9 mm
Serie:
SI4
Ancho:
3.9 mm
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Parte # Alias:
SI4884BDY-E3
Unidad de peso:
0.017870 oz
Tags
SI4884B, SI4884, SI488, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 0.009 Ohms Surface Mount Power Mosfet - SOIC-8
***et
Trans MOSFET N-CH 30V 12.4A 8-Pin SOIC N T/R
***nsix Microsemi
Small Signal Field-Effect Transistor, 12.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ser
N-Channel MOSFETs 30V 12A 2.95W
***S
French Electronic Distributor since 1988
Parte # Mfg. Descripción Valores Precio
SI4884BDY-T1-E3
DISTI # V72:2272_09215597
Vishay IntertechnologiesTrans MOSFET N-CH 30V 12.4A 8-Pin SOIC N T/R
RoHS: Compliant
963
  • 75000:$0.7876
  • 30000:$0.7889
  • 15000:$0.7902
  • 6000:$0.7914
  • 3000:$0.7927
  • 1000:$0.7940
  • 500:$0.7953
  • 250:$0.9715
  • 100:$0.9817
  • 50:$1.2694
  • 25:$1.2823
  • 10:$1.2951
  • 1:$1.6067
SI4884BDY-T1-E3
DISTI # SI4884BDY-T1-E3CT-ND
Vishay SiliconixMOSFET N-CH 30V 16.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2808In Stock
  • 1000:$0.6687
  • 500:$0.8470
  • 100:$1.0253
  • 10:$1.3150
  • 1:$1.4700
SI4884BDY-T1-E3
DISTI # SI4884BDY-T1-E3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 16.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2808In Stock
  • 1000:$0.6687
  • 500:$0.8470
  • 100:$1.0253
  • 10:$1.3150
  • 1:$1.4700
SI4884BDY-T1-E3
DISTI # SI4884BDY-T1-E3TR-ND
Vishay SiliconixMOSFET N-CH 30V 16.5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
2500In Stock
  • 2500:$0.6059
SI4884BDY-T1-E3
DISTI # 25789858
Vishay IntertechnologiesTrans MOSFET N-CH 30V 12.4A 8-Pin SOIC N T/R
RoHS: Compliant
963
  • 9:$1.6067
SI4884BDY-T1-E3
DISTI # 02M8397
Vishay IntertechnologiesTRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,16.5A I(D),SO0
    SI4884BDY-T1-E3
    DISTI # 70026230
    Vishay SiliconixN-CHANNEL 30-V (D-S) MOSFET
    RoHS: Compliant
    0
    • 2500:$1.0400
    • 5000:$0.9800
    • 7500:$0.9300
    SI4884BDY-T1-E3
    DISTI # 781-SI4884BDY-T1-E3
    Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
    RoHS: Compliant
    0
      SI4884BDY-T1-E3Vishay SemiconductorsSMALL SIGNAL FIELD-EFFECT TRANSISTOR, 12.4A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET2340
      • 1124:$0.6234
      • 226:$0.7124
      • 1:$1.7810
      SI4884BDY-T1-E3Vishay IntertechnologiesSMALL SIGNAL FIELD-EFFECT TRANSISTOR, 12.4A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET760
      • 375:$0.4631
      • 68:$0.5343
      • 1:$1.7810
      SI4884BDY-T1-E3Vishay IntertechnologiesSMALL SIGNAL FIELD-EFFECT TRANSISTOR, 12.4A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET1841
      • 969:$0.9395
      • 519:$1.0334
      • 1:$2.5052
      SI4884BDY-T1-E3Vishay Intertechnologies 2398
        SI4884BDY-T1-E3Vishay Intertechnologies 7500
          Imagen Parte # Descripción
          SI4884BDY-T1-GE3

          Mfr.#: SI4884BDY-T1-GE3

          OMO.#: OMO-SI4884BDY-T1-GE3

          MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
          SI4884BDY-T1-E3

          Mfr.#: SI4884BDY-T1-E3

          OMO.#: OMO-SI4884BDY-T1-E3

          MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
          SI4884BDY-T1-GE3

          Mfr.#: SI4884BDY-T1-GE3

          OMO.#: OMO-SI4884BDY-T1-GE3-VISHAY

          RF Bipolar Transistors MOSFET 30V 16.5A 4.45W 9.0mohm @ 10V
          SI4884BDY

          Mfr.#: SI4884BDY

          OMO.#: OMO-SI4884BDY-1190

          Nuevo y original
          SI4884BDY-T1-E3

          Mfr.#: SI4884BDY-T1-E3

          OMO.#: OMO-SI4884BDY-T1-E3-VISHAY

          MOSFET N-CH 30V 16.5A 8-SOIC
          Disponibilidad
          Valores:
          Available
          En orden:
          4000
          Ingrese la cantidad:
          El precio actual de SI4884BDY-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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