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FDMD86100

FDMD86100
Mfr. #:
FDMD86100
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET FET 100V 10.5 MOHM PQFN56
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDMD86100 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FDMD86100 más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
Power-33-8
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
39 A
Rds On - Resistencia de la fuente de drenaje:
10.5 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
21 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
33 W
Configuración:
Doble
Modo de canal:
Mejora
Nombre comercial:
PowerTrench Power Clip
Embalaje:
Carrete
Altura:
0.8 mm
Longitud:
3.3 mm
Serie:
FDMD86100
Tipo de transistor:
2 N-Channel
Ancho:
3.3 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
4.1 ns
Tipo de producto:
MOSFET
Hora de levantarse:
4.3 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
18 ns
Tiempo típico de retardo de encendido:
13 ns
Unidad de peso:
0.003455 oz
Tags
FDMD86, FDMD, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 39A, 10.5mΩ
***et Europe
Transistor MOSFET Array Dual N-CH 100V 39A 8-Pin PQFN T/R
***ark
100V Dual N-Channel PowerTrench MOSFET - 8LD, PQFN, JEDEC, 5.0X6.0MM, POWERCLIP DUAL, COMMON SOURCE
***ical
Trans MOSFET N-CH 100V 10A 8-Pin PQFN EP T/R
***r Electronics
Power Field-Effect Transistor, 39A I(D), 100V, 0.0105ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This package integrates two N-Channel devices connected internally in common-source configuration and incorporates Shielded Gate technology. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (5 x 6 mm) for higher power density.
***emi
N-Channel PowerTrench® MOSFET 100V, 11.2A, 9.8mΩ
***ure Electronics
Single N-Channel 100 V 17 mOhm 41 nC 2.5 W PowerTrench SMT Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 100V 11.2A 8-Pin SOIC N T/R - Tape and Reel
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
***ment14 APAC
MOSFET, N CH, 100V, 11.2A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0081ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.7V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:50A
***emi
Shielded Gate PowerTrench® MOSFET, N-Channel, 100 V, 50 A, 10.2 mΩ
*** Source Electronics
Trans MOSFET N-CH Si 100V 12.5A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 100V 12.5A DPAK-3
*** Stop Electro
Power Field-Effect Transistor, 12.5A I(D), 100V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***nell
MOSFET, N CH, 100V, 50A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:127W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***et Japan
Transistor MOSFET Array Dual N-CH 100V 48A 8-Pin PQFN T/R
***emi
Dual N-Channel PowerTrench® MOSFET 100V 48A, 9.9mΩ
***ark
100V Dual N-Channel PowerTrench MOSFET - 8LD, PQFN, JEDEC, 5.0X6.0MM, POWERCLIP DUAL, SYMMETRICAL HAL
***ment14 APAC
MOSFET, DUAL N-CH, 100V, 48A, 50W, PQFN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:48A; Source Voltage Vds:100V; On
***r Electronics
Power Field-Effect Transistor, 48A I(D), 100V, 0.0099ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.
***nell
MOSFET, DUAL N-CH, 100V, 48A, 50W, PQFN; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 48A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0078ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Power Dissipation Pd: 50W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ure Electronics
Single N-Channel 100 V 10 mOhm 44 nC OptiMOS™ Power Mosfet - TDSON-8
***ow.cn
BSC100N10NSFGATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R - Arrow.com
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 90A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:156W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:90A; Power Dissipation Pd:156W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ure Electronics
Single N-Channel 100 V 10.5 mOhm 40 nC OptiMOS™ Power Mosfet - TDSON-8
***ical
Trans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 90A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; Current Id Max:90A; Power Dissipation Pd:156W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ure Electronics
Single N-Channel 100 V 12.3 mOhm 51 nC OptiMOS™ Power Mosfet - TDSON-8
***roFlash
Power Field-Effect Transistor, 10.6A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 71A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.85V; Power Dissipation Pd:114W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:71A; Power Dissipation Pd:114W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descripción Valores Precio
FDMD86100
DISTI # V72:2272_06337943		ON Semiconductor100V DUAL N-CHANNEL POWERTRENC72
  • 25:$2.3110
  • 10:$2.3340
  • 1:$3.0371
FDMD86100
DISTI # V36:1790_06337943		ON Semiconductor100V DUAL N-CHANNEL POWERTRENC0
    FDMD86100
    DISTI # FDMD86100CT-ND    		ON SemiconductorMOSFET 2N-CH 100V
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      FDMD86100
      DISTI # FDMD86100DKR-ND      		ON SemiconductorMOSFET 2N-CH 100V
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        FDMD86100
        DISTI # FDMD86100TR-ND        		ON SemiconductorMOSFET 2N-CH 100V
        RoHS: Compliant
        Min Qty: 3000
        Container: Tape & Reel (TR)        		Temporarily Out of Stock
        • 3000:$1.4746
        FDMD86100
        DISTI # 25921891        		ON Semiconductor100V DUAL N-CHANNEL POWERTRENC72
        • 25:$2.3110
        • 10:$2.3340
        • 5:$3.0371
        FDMD86100
        DISTI # FDMD86100        		ON SemiconductorTrans MOSFET N-CH 150V 10A 8-Pin PQFN T/R - Bulk (Alt: FDMD86100)
        RoHS: Compliant
        Min Qty: 214
        Container: Bulk        		Americas - 0
        • 1070:$1.3900
        • 2140:$1.3900
        • 214:$1.4900
        • 428:$1.4900
        • 642:$1.4900
        FDMD86100
        DISTI # FDMD86100        		ON SemiconductorTrans MOSFET N-CH 150V 10A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMD86100)
        RoHS: Compliant
        Min Qty: 3000
        Container: Reel        		Americas - 0
        • 3000:$1.2900
        • 6000:$1.2900
        • 12000:$1.2900
        • 18000:$1.2900
        • 30000:$1.2900
        FDMD86100
        DISTI # 45Y5126        		ON SemiconductorFET 80V 10.5 MOHM PQFN56 / REEL0
        • 30000:$1.3000
        • 18000:$1.3200
        • 12000:$1.3700
        • 6000:$1.4800
        • 3000:$1.5800
        • 1:$1.6600
        FDMD86100
        DISTI # 512-FDMD86100        		ON SemiconductorMOSFET FET 80V 10.5 MOHM PQFN56
        RoHS: Compliant        		2991
        • 1:$2.7800
        • 10:$2.3700
        • 100:$2.0500
        • 250:$1.9400
        • 500:$1.7400
        • 1000:$1.4700
        • 3000:$1.4000
        FDMD86100Fairchild Semiconductor CorporationPower Field-Effect Transistor
        RoHS: Compliant        		1078
        • 1000:$1.5400
        • 500:$1.6200
        • 100:$1.6900
        • 25:$1.7600
        • 1:$1.9000
        Imagen Parte # Descripción
        FDMD8540L

        Mfr.#: FDMD8540L

        OMO.#: OMO-FDMD8540L

        		 MOSFET 40V Dual N-Channel PowerTrench MOSFET
        ADG1411YRUZ

        Mfr.#: ADG1411YRUZ

        OMO.#: OMO-ADG1411YRUZ

        		 Analog Switch ICs 1.8 Ohm 250mA iCMOS Quad SPST
        ADG1411YRUZ

        Mfr.#: ADG1411YRUZ

        OMO.#: OMO-ADG1411YRUZ-ANALOG-DEVICES

        		 Analog Switch ICs 1.8 Ohm 250mA iCMOS Quad SPST
        FDMD8540L

        Mfr.#: FDMD8540L

        OMO.#: OMO-FDMD8540L-ON-SEMICONDUCTOR

        		 MOSFET 2N-CH 40V 33A POWER
        Disponibilidad
        Valores:
        Available
        En orden:
        1985
        Ingrese la cantidad:
        El precio actual de FDMD86100 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        2,78 US$
        2,78 US$
        10
        2,37 US$
        23,70 US$
        100
        2,05 US$
        205,00 US$
        250
        1,94 US$
        485,00 US$
        500
        1,74 US$
        870,00 US$
        1000
        1,47 US$
        1 470,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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