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IHW20N135R5XKSA1

IHW20N135R5XKSA1
Mfr. #:
IHW20N135R5XKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors IGBT PRODUCTS TrenchStop RC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IHW20N135R5XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1350 V
Voltaje de saturación colector-emisor:
1.65 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
40 A
Pd - Disipación de energía:
288 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
RC
Embalaje:
Tubo
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
240
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
IHW20N135R5 SP001078568
Unidad de peso:
0.213302 oz
Tags
IHW20N135R5, IHW20N13, IHW20N1, IHW20N, IHW20, IHW2, IHW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
1350 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
***ark
Igbt, Single, 1.35Kv, 40A, To-247; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:288W; Collector Emitter Voltage V(Br)Ceo:1.35Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
The latest generation of reverse conducting IGBTs has been optimized for the demanding requirements of Induction Cooking applications. The new 20A RC-H5 devices complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability. | Summary of Features: Switching losses reduced by 30%; Very low conduction losses; Reduced turn-on current spike up to 10%; T j(max) = 175C; Soft current turn-off waveforms for low EMI; Higher blocking voltage V BR(min) = 1350 | Benefits: Increased switching frequency; Lowest power dissipation; Better thermal management for higher reliability; Lower EMI filtering requirements; Reduced system costs; Highest reliability against peak current | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Induction rice cookers; Induction water heaters; Other resonant switching topologies
***ical
Trans IGBT Chip N-CH 1350V 30A 357000mW 3-Pin(3+Tab) TO-247 Tube
***emi
IGBT 1350V 15A FS2-RC Induction Heating
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 1350V V(BR)CES, N-Channel
***nell
IGBT, 1.35KV, 30A, 175DEG C, 357W;
***i-Key
IGBT TRENCH/FS 1350V 30A TO247
***ark
IGBT, SINGLE, 1.35KV, 30A, TO-247; Continuous Collector Current:30A; Collector Emitter Saturation Voltage:2.15V; Power Dissipation:357W; Collector Emitter Voltage Max:1.35kV; No. of Pins:3Pins; Operating Temperature Max:175°C; MSL:- RoHS Compliant: Yes
***omponent
Trans IGBT Chip N-CH 1.2KV 20A 3-Pin TO-247 Tube (Alt: SP001150026)
***nell
IGBT, SINGLE, 1.2KV, 40A, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 288W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pi
***ineon SCT
The 5th generation of reverse conducting 1200 V, 20 A TRENCHSTOP™ 5 IGBTs with monolithically integrated reverse conducting diode in a TO247 package has been optimized for the demanding requirements of Induction Cooking applications, PG-TO247-3, RoHS
***ineon
The latest generation of reverse conducting IGBTs has been optimized for the demanding requirements of Induction Cooking applications. The new 20A RC-H5 devices complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability. | Summary of Features: Switching losses reduced by 30%; Very low conduction losses; Reduced turn-on current spike up to 10%; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Increased switching frequency; Lowest power dissipation; Better thermal management for higher reliability; Lower EMI filtering requirements; Reduced system costs; Highest reliability against peak current | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Induction rice cookers; Induction water heaters; Other resonant switching topologies
***ical
Trans IGBT Chip N-CH 1200V 40A 310000mW 3-Pin(3+Tab) TO-247 Tube
***ment14 APAC
IGBT+ DIODE,1200V,20A,TO247; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:310W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:310W
***ineon
The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in VCEsat and Vf; Lowest switching losses, highest efficiency; Tj(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents
***ource
43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode43A, 1200V,,NPTN£¨
*** Source Electronics
Trans IGBT Chip N-CH 1200V 43A 298000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 43A 298W TO247
***ure Electronics
HGTG11N120CND Series 1200 V 43 A Flange Mount NPT N-Channel IGBT-TO-247
***ment14 APAC
IGBT, N; Transistor Type:IGBT; DC Collector Current:43A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:43A; Package / Case:TO-247; Power Dissipation Max:298W; Power Dissipation Pd:298W; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***rchild Semiconductor
HGTG11N120CND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
***et
Reverse Conducting IGBT With Monolithic Body Diode 1350V 30A 3-Pin TO-247
***nell
IGBT, SINGLE, 1.35KV, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 349W; Collector Emitter Voltage V(br)ceo: 1.35k; Available until stocks are exhausted
***ineon
The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications
***ical
Trans IGBT Chip N-CH 1350V 120A 394000mW 3-Pin(3+Tab) TO-247 Tube
***emi
IGBT, 1350V 40A FS2-RC Induction Heating
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 1350V V(BR)CES, N-Channel
***i-Key
IGBT TRENCH/FS 1350V 80A TO247
***ment14 APAC
Transistor, IGBT, 2.4V, 80A, TO-247-3; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:394W; Collector Emitter Voltage V(br)ceo:1.35kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C
Parte # Mfg. Descripción Valores Precio
IHW20N135R5XKSA1
DISTI # V99:2348_06377974		Infineon Technologies AGTrans IGBT Chip N-CH 1.35KV 40A 3-Pin(3+Tab) TO-247 Tube223
  • 1200:$1.9980
  • 720:$2.3330
  • 240:$2.7700
  • 10:$3.1940
  • 1:$4.1305
IHW20N135R5XKSA1
DISTI # V36:1790_06377974		Infineon Technologies AGTrans IGBT Chip N-CH 1.35KV 40A 3-Pin(3+Tab) TO-247 Tube0
  • 240000:$1.6660
  • 120000:$1.6680
  • 24000:$1.8840
  • 2400:$2.2580
  • 240:$2.3200
IHW20N135R5XKSA1
DISTI # IHW20N135R5XKSA1-ND		Infineon Technologies AGIGBT 1350V 40A 288W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		515In Stock
  • 2640:$2.0020
  • 720:$2.4925
  • 240:$2.9279
  • 25:$3.3784
  • 10:$3.5740
  • 1:$3.9800
IHW20N135R5XKSA1
DISTI # 31230576		Infineon Technologies AGTrans IGBT Chip N-CH 1.35KV 40A 3-Pin(3+Tab) TO-247 Tube223
  • 4:$4.1305
IHW20N135R5XKSA1
DISTI # IHW20N135R5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 1.35KV 40A 3-Pin TO-247 Tube - Bulk (Alt: IHW20N135R5XKSA1)
Min Qty: 204
Container: Bulk		Americas - 0
  • 1020:$1.4900
  • 2040:$1.4900
  • 612:$1.5900
  • 204:$1.6900
  • 408:$1.6900
IHW20N135R5XKSA1
DISTI # IHW20N135R5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 1.35KV 40A 3-Pin TO-247 Tube - Rail/Tube (Alt: IHW20N135R5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$1.7900
  • 2400:$1.7900
  • 480:$1.8900
  • 960:$1.8900
  • 240:$1.9900
IHW20N135R5XKSA1
DISTI # SP001078568		Infineon Technologies AGTrans IGBT Chip N-CH 1.35KV 40A 3-Pin TO-247 Tube (Alt: SP001078568)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€1.3900
  • 100:€1.5900
  • 500:€1.5900
  • 25:€1.6900
  • 50:€1.6900
  • 10:€1.7900
  • 1:€1.9900
IHW20N135R5XKSA1
DISTI # IHW20N135R5		Infineon Technologies AGTrans IGBT Chip N-CH 1.35KV 40A 3-Pin TO-247 Tube (Alt: IHW20N135R5)
RoHS: Compliant
Min Qty: 240
Container: Tube		Asia - 0
  • 12000:$1.8101
  • 6000:$1.8333
  • 2400:$1.8571
  • 1200:$1.8816
  • 720:$1.9324
  • 480:$1.9861
  • 240:$2.0429
IHW20N135R5XKSA1
DISTI # 12AC9667		Infineon Technologies AGIGBT, SINGLE, 1.35KV, 40A, TO-247,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:288W,Collector Emitter Voltage V(br)ceo:1.35kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes680
  • 500:$2.3900
  • 250:$2.6700
  • 100:$2.8100
  • 50:$2.9500
  • 25:$3.1000
  • 10:$3.2400
  • 1:$3.8200
IHW20N135R5XKSA1
DISTI # 726-IHW20N135R5XKSA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS TrenchStop RC
RoHS: Compliant		276
  • 1:$3.7800
  • 10:$3.2100
  • 100:$2.7800
  • 250:$2.6400
  • 500:$2.3700
IHW20N135R5
DISTI # 726-IHW20N135R5		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS TrenchStop RC
RoHS: Compliant		36
  • 1:$3.7800
  • 10:$3.2100
  • 100:$2.7800
  • 250:$2.6400
  • 500:$2.3700
IHW20N135R5XKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 40A I(C), 1350V V(BR)CES, N-Channel, TO-247
RoHS: Not Compliant		91600
  • 1000:$1.6200
  • 500:$1.7000
  • 100:$1.7700
  • 25:$1.8500
  • 1:$1.9900
IHW20N135R5XKSA1
DISTI # 2709909		Infineon Technologies AGIGBT, SINGLE, 1.35KV, 40A, TO-247
RoHS: Compliant		678
  • 2640:$3.0200
  • 720:$3.7600
  • 240:$4.4200
  • 25:$5.1000
  • 10:$5.3900
  • 1:$6.0000
IHW20N135R5XKSA1
DISTI # 2709909		Infineon Technologies AGIGBT, SINGLE, 1.35KV, 40A, TO-247683
  • 500:£1.8100
  • 250:£2.0200
  • 100:£2.1200
  • 10:£2.4500
  • 1:£3.2300
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Mfr.#: FQD2N100TM

OMO.#: OMO-FQD2N100TM

 MOSFET 1000V N-Channel QFET
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Mfr.#: DG4053EEQ-T1-GE3

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 Analog Switch ICs Trple 2 Ch Multiplxr Pd 450mW TSSOP-16
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Mfr.#: SG2524DR

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 CAP ALUM POLY 100UF 20% 35V SMD
Disponibilidad
Valores:
276
En orden:
2259
Ingrese la cantidad:
El precio actual de IHW20N135R5XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
3,78 US$
3,78 US$
10
3,21 US$
32,10 US$
100
2,78 US$
278,00 US$
250
2,64 US$
660,00 US$
500
2,37 US$
1 185,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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