S25FL256SAGMFBG01

Mfr. #:: S25FL256SAGMFBG01
Fabricante:: Cypress Semiconductor
Descripción:: Flash Memory 256-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 80MHZ DDR SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS (16-PIN SOIC IN T&R PACKING), EHPLC, SO FOOTPRINT WITH RESET#, UNIFORM 64-KB SECTOR
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Ficha de datos:: S25FL256SAGMFBG01 Ficha de datos
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Más información:: S25FL256SAGMFBG01 más información S25FL256SAGMFBG01 Product Details

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Valor de atributo

Fabricante: Cypress Semiconductor Corp

categoria de producto: Memoria

Serie: FL-S

embalaje: Embalaje alternativo de tubo

Estilo de montaje: SMD / SMT

Rango de temperatura de funcionamiento: - 40 C to + 105 C

Paquete-Estuche: SO-16

Temperatura de funcionamiento: -40°C ~ 105°C (TA)

Interfaz: Serie SPI

Suministro de voltaje: 2.7 V ~ 3.6 V

Paquete de dispositivo de proveedor: 16-SO

Tamaño de la memoria: 256M (32M x 8)

Tipo de memoria: FLASH - NOR

Velocidad: 133MHz

Arquitectura: MirrorBit Eclipse

Formato de memoria: DESTELLO

Estándar: Common Flash Interface (CFI)

Tipo de interfaz: SPI

Organización: 32 M x 8

Suministro-Corriente-Máx.: 100 mA

Ancho de bus de datos: 8 bit

Suministro-Voltaje-Máx.: 3.6 V

Suministro-Voltaje-Mín.: 2.7 V

Frecuencia de reloj máxima: 133 MHz

Tipo de tiempo: Sincrónico

Tags: S25FL256SAGMFBG, S25FL256SAGMFB, S25FL256SAGM, S25FL256SAG, S25FL256SA, S25FL256S, S25FL25, S25FL2, S25FL, S25F, S25

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We provide 90-360 days warranty.

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S25FL256SAGMFBG01 Descripción

***et: 256-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 80MHZ DDR SPI (SERI

***i-Key: IC FLASH 256M SPI 133MHZ 16SOIC

***ark: TUBE PKGED / 256-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 80MHZ DDR SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS (16-PIN SOIC IN T&R PACKING), EHPLC, SO FOOTPRINT WITH RESET#, UNIFORM 64-KB SECTORS

S25FL256SAGMFBG01 Más información

S25FL MirroBit Flash Non-Volatile Memory: Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.

S25FLxS FL-S NOR Flash Memory Devices: Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
S25FL256SAGMFBG01 DISTI # S25FL256SAGMFBG01-ND	Cypress Semiconductor	IC FLASH 256M SPI 133MHZ 16SOIC RoHS: Compliant Min Qty: 94 Container: Tube	Temporarily Out of Stock	94:$6.4807
S25FL256SAGMFBG01 DISTI # 727-S25FL256SAGMFBG0	Cypress Semiconductor	NOR Flash Nor RoHS: Compliant	0	1:$8.7600 10:$8.0300 25:$7.3000 50:$6.9600 100:$6.5700 250:$6.0700

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	Mfr.#: S25FL256SAGMFVR00 OMO.#: OMO-S25FL256SAGMFVR00-CYPRESS-SEMICONDUCTOR	Flash Memory 256-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 64KB, SO3016 IN TRAY PACKING, RESET# + VIO
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	Mfr.#: S25FL256SDPNFV000 OMO.#: OMO-S25FL256SDPNFV000-CYPRESS-SEMICONDUCTOR	Flash Memory 256-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 66-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 64KB, WSON6X8 IN TRAY PACKING
	Mfr.#: S25FL256SDSMFBG03 OMO.#: OMO-S25FL256SDSMFBG03-CYPRESS-SEMICONDUCTOR	Flash Memory 256-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 80MHZ DDR SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS, EHPLC, SO FOOTPRINT WITH RESET#, UNIFORM 64-KB SECTORS

Disponibilidad

Valores:: Available
En orden:: 5500
Ingrese la cantidad:

El precio actual de S25FL256SAGMFBG01 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~9,10 US$~~; ~~9,10 US$~~

10: ~~8,65 US$~~; ~~86,50 US$~~

100: ~~8,19 US$~~; ~~819,45 US$~~

500: ~~7,74 US$~~; ~~3 869,65 US$~~

1000: ~~7,28 US$~~; ~~7 284,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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S25FL256SAGMFBG01

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes