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IXXH40N65B4

IXXH40N65B4
Mfr. #:
IXXH40N65B4
Fabricante:
Littelfuse
Descripción:
IGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXXH40N65B4 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IXXH40N65B4 más información
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
IGBTs - Single
Serie
GenX4, XPT
embalaje
Tubo
Unidad de peso
0.158733 oz
Estilo de montaje
A través del orificio
Nombre comercial
XPT
Paquete-Estuche
TO-247-3
Tipo de entrada
Estándar
Tipo de montaje
A través del orificio
Paquete de dispositivo de proveedor
TO-247 (IXXH)
Configuración
Único
Potencia máxima
455W
Tiempo de recuperación inverso trr
-
Colector-corriente-Ic-Max
120A
Voltaje-Colector-Emisor-Ruptura-Máx.
650V
Tipo IGBT
PT
Colector de corriente pulsado Icm
240A
Vce-en-Max-Vge-Ic
1.8V @ 15V, 40A
Energía de conmutación
1.4mJ (on), 560μJ (off)
Gate-Charge
77nC
Td-encendido-apagado-25 ° C
28ns/144ns
Condición de prueba
400V, 40A, 5 Ohm, 15V
Disipación de potencia Pd
455 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Colector-Emisor-Voltaje-VCEO-Max
650 V
Colector-Emisor-Saturación-Voltaje
1.5 V
Corriente-de-colector-continuo-a-25-C
120 A
Puerta-Emisor-Fuga-Corriente
100 nA
Voltaje máximo del emisor de puerta
20 V
Colector-continuo-Corriente-Ic-Max
40 A
Tags
IXXH40N65B, IXXH4, IXXH, IXX
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Parte # Mfg. Descripción Valores Precio
IXXH40N65B4
DISTI # IXXH40N65B4-ND		IXYS CorporationIGBT 650V 120A 455W TO247AD
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$4.3707
IXXH40N65B4D1
DISTI # IXXH40N65B4D1-ND		IXYS CorporationIGBT
RoHS: Not compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$5.5533
IXXH40N65B4H1
DISTI # IXXH40N65B4H1-ND		IXYS CorporationIGBT 650V 120A 455W TO247AD
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$6.5007
IXXH40N65B4
DISTI # 747-IXXH40N65B4		IXYS CorporationIGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT
RoHS: Compliant		62
  • 1:$5.6000
  • 10:$5.0000
  • 25:$4.3700
  • 50:$4.1600
  • 100:$4.1000
  • 250:$3.7000
  • 500:$2.9100
  • 1000:$2.7200
  • 2500:$2.6200
IXXH40N65B4H1
DISTI # 747-IXXH40N65B4H1		IXYS CorporationIGBT Transistors
RoHS: Compliant		10
  • 1:$7.9300
  • 10:$7.1400
  • 25:$6.5000
  • 50:$5.9400
  • 100:$5.8700
  • 250:$5.3500
  • 500:$4.9200
  • 1000:$4.2800
Imagen Parte # Descripción
IXXH40N65B4D1

Mfr.#: IXXH40N65B4D1

OMO.#: OMO-IXXH40N65B4D1

 Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
IXXH40N65C4D1

Mfr.#: IXXH40N65C4D1

OMO.#: OMO-IXXH40N65C4D1

 Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
IXXH40N65B4

Mfr.#: IXXH40N65B4

OMO.#: OMO-IXXH40N65B4

 IGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT
IXXH40N65B4H1

Mfr.#: IXXH40N65B4H1

OMO.#: OMO-IXXH40N65B4H1

 IGBT Transistors DISC IGBT XPT-GENX4
IXXH40N65B4D1

Mfr.#: IXXH40N65B4D1

OMO.#: OMO-IXXH40N65B4D1-IXYS-CORPORATION

 IGBT
IXXH40N65B4H1

Mfr.#: IXXH40N65B4H1

OMO.#: OMO-IXXH40N65B4H1-IXYS-CORPORATION

 IGBT 650V 120A 455W TO247AD
IXXH40N65B4

Mfr.#: IXXH40N65B4

OMO.#: OMO-IXXH40N65B4-IXYS-CORPORATION

 IGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT
Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de IXXH40N65B4 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
3,93 US$
3,93 US$
10
3,73 US$
37,34 US$
100
3,54 US$
353,70 US$
500
3,34 US$
1 670,25 US$
1000
3,14 US$
3 144,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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