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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| RF1S50N06LESM | Harris Semiconductor | 50A, 60V, 0.022 OHM, ESD RATED, LOGIC LEVEL N-CHANNEL POWER MOSFET RoHS: Not Compliant | 1705 |
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| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: RF1S50N06 OMO.#: OMO-RF1S50N06-1190 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: RF1S50N06 LESM OMO.#: OMO-RF1S50N06-LESM-1190 |
Nuevo y original |
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Mfr.#: RF1S50N06LESM OMO.#: OMO-RF1S50N06LESM-1190 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S50N06LSM OMO.#: OMO-RF1S50N06LSM-1190 |
Nuevo y original |
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Mfr.#: RF1S50N06LSM9A OMO.#: OMO-RF1S50N06LSM9A-1190 |
Nuevo y original |
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Mfr.#: RF1S50N06SM OMO.#: OMO-RF1S50N06SM-1190 |
Nuevo y original |
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Mfr.#: RF1S50N06SM9A OMO.#: OMO-RF1S50N06SM9A-1190 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |