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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SI4666DY-T1-GE3 DISTI # SI4666DY-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 25V 16.5A 8-SOIC Min Qty: 1 Container: Cut Tape (CT) | 33In Stock |
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| SI4666DY-T1-GE3 DISTI # SI4666DY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 25V 16.5A 8-SOIC Min Qty: 1 Container: Digi-Reel® | 33In Stock |
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| SI4666DY-T1-GE3 DISTI # SI4666DY-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 25V 16.5A 8-SOIC Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI4666DY-T1-GE3 DISTI # 04X9762 | Vishay Intertechnologies | MOSFET, N CHANNEL, 25V, 16.5A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:16.5A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0083ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:600mV RoHS Compliant: Yes RoHS: Compliant | 0 | |
| SI4666DY-T1-GE3. DISTI # 15AC0298 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:16.5A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0083ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:600mV,Power Dissipation Pd:5W,No. of Pins:8Pins RoHS Compliant: No RoHS: Not Compliant | 0 | |
| SI4666DY-T1-GE3 DISTI # 70616182 | Vishay Siliconix | SI4666DY-T1-GE3 N-channel MOSFET Transistor,16.5 A,25 V,8-Pin SOIC RoHS: Not Compliant | 0 |
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| SI4666DY-T1-GE3 DISTI # 1657257 | Vishay Intertechnologies | On a Reel of 2500, SI4666DY-T1-GE3 N-Channel MOSFET, 16.5 A, 25 V, 8-Pin SOIC Vishay, RL Min Qty: 2500 Container: Reel | 0 |
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| SI4666DY-T1-GE3 DISTI # 8123249 | Vishay Intertechnologies | Supplied as a Tape, SI4666DY-T1-GE3 N-Channel MOSFET, 16.5 A, 25 V, 8-Pin SOIC Vishay, TA Min Qty: 20 Container: Ammo Pack | 0 |
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| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: SI4662DY-T1-E3 OMO.#: OMO-SI4662DY-T1-E3 |
MOSFET 30V 18.6A 6.25W |
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Mfr.#: SI4662DY-T1-GE3 OMO.#: OMO-SI4662DY-T1-GE3 |
MOSFET 30V 18.6A 6.25W 10mohm @ 10V |
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Mfr.#: SI4662DY-T1-GE3 OMO.#: OMO-SI4662DY-T1-GE3-317 |
RF Bipolar Transistors MOSFET 30V 18.6A 6.25W 10mohm @ 10V |
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Mfr.#: SI4662DY-T1-E3 OMO.#: OMO-SI4662DY-T1-E3-317 |
RF Bipolar Transistors MOSFET 30V 18.6A 6.25W |
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Mfr.#: SI4662DY-T1-E3 GE3 OMO.#: OMO-SI4662DY-T1-E3-GE3-1190 |
Nuevo y original |