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BSM75GAR120DN2

BSM75GAR120DN2
Mfr. #:
BSM75GAR120DN2
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors 1200V 100A GAR CH
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSM75GAR120DN2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
IS4 (34 mm )-5
Estilo de montaje:
Montaje en chasis
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
2.5 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
100 A
Pd - Disipación de energía:
625 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Bandeja
Altura:
30.5 mm
Longitud:
94 mm
Ancho:
34 mm
Marca:
Infineon Technologies
Corriente continua del colector:
105 A
Corriente de fuga puerta-emisor:
400 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
10
Subcategoría:
IGBT
Parte # Alias:
BSM75GAR120DN2HOSA1 SP000100462
Unidad de peso:
5.436423 oz
Tags
BSM75GAR12, BSM75GAR, BSM75GA, BSM75G, BSM75, BSM7, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
IGBT - Standard Modules 1200V, 100A, GAR CH
***omponent
Eupec Infineon power module
***nell
IGBT MODULE, CHOPPER, 1200V; Transistor type:Half-Bridge; Voltage, Vces:1200V; Current, Ic continuous a max:75A; Case style:M34a; Power, Pd:625W; Transistor polarity:NPN; Voltage, Vceo:1200V
Parte # Mfg. Descripción Valores Precio
BSM75GAR120DN2HOSA1
DISTI # BSM75GAR120DN2HOSA1-ND		Infineon Technologies AGIGBT 2 MED POWER 34MM-1
RoHS: Compliant
Min Qty: 10
Container: Tray		Limited Supply - Call
  • 10:$78.5330
BSM75GAR120DN2
DISTI # 61M5057		Infineon Technologies AGIGBT MODULE, CHOPPER, 1200V,Transistor Polarity:N Channel,DC Collector Current:105A,Collector Emitter Saturation Voltage Vce(on):3V,Power Dissipation Pd:625W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:7Pins , RoHS Compliant: Yes0
    BSM75GAR120DN2Infineon Technologies AGInsulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant    		2
    • 1000:$68.6500
    • 500:$72.2600
    • 100:$75.2300
    • 25:$78.4500
    • 1:$84.4900
    BSM75GAR120DN2
    DISTI # 641-BSM75GAR120DN2    		Infineon Technologies AGIGBT Transistors 1200V 100A GAR CH
    RoHS: Compliant    		0
      BSM75GAR120DN2
      DISTI # 1496960      		Infineon Technologies AGIGBT MODULE, CHOPPER, 1200V
      RoHS: Compliant      		0
      • 1:£55.8100
      • 5:£54.5300
      • 10:£53.2600
      • 50:£51.9800
      BSM75GAR120DN2
      DISTI # 1496960      		Infineon Technologies AGIGBT MODULE, CHOPPER, 1200V
      RoHS: Compliant      		0
      • 1:$125.0700
      • 5:$120.6100
      • 12:$116.4500
      Imagen Parte # Descripción
      BSM75GAL120DN2

      Mfr.#: BSM75GAL120DN2

      OMO.#: OMO-BSM75GAL120DN2

      		 IGBT Modules 1200V 75A CHOPPER
      BSM75GAR120DN2

      Mfr.#: BSM75GAR120DN2

      OMO.#: OMO-BSM75GAR120DN2

      		 IGBT Transistors 1200V 100A GAR CH
      BSM75GAL100D

      Mfr.#: BSM75GAL100D

      OMO.#: OMO-BSM75GAL100D-1190

      		 Nuevo y original
      BSM75GAL120D

      Mfr.#: BSM75GAL120D

      OMO.#: OMO-BSM75GAL120D-1190

      		 Nuevo y original
      BSM75GAL60DLC

      Mfr.#: BSM75GAL60DLC

      OMO.#: OMO-BSM75GAL60DLC-1190

      		 Nuevo y original
      BSM75GAR120D

      Mfr.#: BSM75GAR120D

      OMO.#: OMO-BSM75GAR120D-1190

      		 Nuevo y original
      BSM75GAR170DN2

      Mfr.#: BSM75GAR170DN2

      OMO.#: OMO-BSM75GAR170DN2-1190

      		 Nuevo y original
      BSM75GAL120DN2HOSA1

      Mfr.#: BSM75GAL120DN2HOSA1

      OMO.#: OMO-BSM75GAL120DN2HOSA1-INFINEON-TECHNOLOGIES

      		 MEDIUM POWER 34MM
      BSM75GAR120DN2HOSA1

      Mfr.#: BSM75GAR120DN2HOSA1

      OMO.#: OMO-BSM75GAR120DN2HOSA1-INFINEON-TECHNOLOGIES

      		 IGBT 2 MED POWER 34MM-1
      BSM75GAR120DN2

      Mfr.#: BSM75GAR120DN2

      OMO.#: OMO-BSM75GAR120DN2-126

      		 IGBT Transistors 1200V 100A GAR CH
      Disponibilidad
      Valores:
      Available
      En orden:
      4500
      Ingrese la cantidad:
      El precio actual de BSM75GAR120DN2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      10
      76,31 US$
      763,10 US$
      30
      73,77 US$
      2 213,10 US$
      100
      68,69 US$
      6 869,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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