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SIB415DK-T1-GE3

SIB415DK-T1-GE3
Mfr. #:
SIB415DK-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 30V 9.0A 13W 87mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIB415DK-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIB415DK-T1-GE3 DatasheetSIB415DK-T1-GE3 Datasheet (P4-P6)SIB415DK-T1-GE3 Datasheet (P7)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Nombre comercial:
TrenchFET, PowerPAK
Embalaje:
Carrete
Serie:
HERMANO
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Parte # Alias:
SIB415DK-GE3
Unidad de peso:
0.003386 oz
Tags
SIB41, SIB4, SIB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET P-CH 30V 4.17A 6-Pin PowerPAK SC-75 T/R
***ark
P CHANNEL MOSFET, -30V, 9A, SC-75, FULL REEL
***nell
MOSFET, P, PPAK SC-75; Transistor Polarity:P Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.072ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:2.4W; Transistor Case Style:SC-75; No. of Pins:6Pins; Operating Temperature Max:150°C; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Current Id Max:-9A; Junction Temperature Tj Max:150°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Rise Time:55ns; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:-3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V
Parte # Mfg. Descripción Valores Precio
SIB415DK-T1-GE3
DISTI # SIB415DK-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 30V 9A SC75-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SIB415DK-T1-GE3
    DISTI # SIB415DK-T1-GE3CT-ND    		Vishay SiliconixMOSFET P-CH 30V 9A SC75-6
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SIB415DK-T1-GE3
      DISTI # SIB415DK-T1-GE3DKR-ND      		Vishay SiliconixMOSFET P-CH 30V 9A SC75-6
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SIB415DK-T1-GE3
        DISTI # 70616557        		Vishay SiliconixTrans MOSFET P-CH 30V 4.17A
        RoHS: Compliant        		0
        • 300:$0.4300
        • 600:$0.3600
        • 1500:$0.3400
        • 3000:$0.3200
        SIB415DK-T1-GE3
        DISTI # 781-SIB415DK-T1-GE3        		Vishay IntertechnologiesMOSFET 30V 9.0A 13W 87mohm @ 10V
        RoHS: Compliant        		0
          Imagen Parte # Descripción
          SIB415DK-T1-GE3

          Mfr.#: SIB415DK-T1-GE3

          OMO.#: OMO-SIB415DK-T1-GE3

          		 MOSFET 30V 9.0A 13W 87mohm @ 10V
          SIB415DK-T1-E3

          Mfr.#: SIB415DK-T1-E3

          OMO.#: OMO-SIB415DK-T1-E3-1190

          		 Nuevo y original
          SIB415DK-T1-GE3

          Mfr.#: SIB415DK-T1-GE3

          OMO.#: OMO-SIB415DK-T1-GE3-VISHAY

          		 MOSFET P-CH 30V 9A SC75-6
          Disponibilidad
          Valores:
          Available
          En orden:
          4500
          Ingrese la cantidad:
          El precio actual de SIB415DK-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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